MUPT5e3 - MUPT48e3 and MUPTB5e3 - MUPTB48e3 Available 5V - 48V Powermite1, Surface Mount Transient Voltage Suppressors DESCRIPTION Microsemi's unique and new Powermite MUPT series of transient voltage suppressors feature oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible electrical degradation under repeated surge conditions. Both unidirectional and bidirectional configurations are available. In addition to its size advantages, the Powermite package includes a fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at assembly and a unique locking tab design serves as an integral heat sink. Its innovative design makes this device fully compatible for use with automatic insertion equipment. High-Reliability Screening available in reference to MIL-PRF-19500 Tested in accordance with the requirements of AEC-Q101 Important: For the latest information, visit our website http://www.microsemi.com. FEATURES Powermite package with standoff voltages 5 to 48 V. Both unidirectional and bidirectional polarities: -Anode to case bottom (MUPT5e3 thru MUPT48e3) -Bidirectional (MUPTB5e3 thru MUPTB48e3) Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional. 100% surge current testing of all parts. Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B. Both RoHS and non-RoHS compliant versions available. DO-216AA Package APPLICATIONS / BENEFITS 2 Protects sensitive components such as IC's, CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc. Protection from switching and induced RF transients. -Integral heat sink / locking tabs -Fully metallic bottom side eliminates flux entrapment Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively. Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1: MUPT5 /MUPTB8 to 17 Class 2: MUPT5 /MUPTB5 to 12 MAXIMUM RATINGS Parameters/Test Conditions Symbol Value Junction and Storage Temperature (1) Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case (base tab) Peak Pulse Power (see Figure 1 and Figure 2) MUPT5e3 thru MUPT48e3: MUPTB5e3 thru MUPTB48e3: TJ / TSTG RJA RJC -65 to +150 240 15 @ 8/20 s @10/1000s 1000 150 1000 150 Rated Average Power Dissipation o (base tab < 112 C) Impulse Repetition Rate (duty factor) Solder Temperature @ 10 s PPP PM(AV) 2.5 TSP 0.01 260 Notes: 1. When mounted on FR4 PC board with 1 oz copper. RF01103-1, Rev. B (19/05/17) (c)2017 Microsemi Corporation Unit o C C/W o C/W o W W % C o Power Discretes & Modules Business Unit Discrete Products Group Microsemi Corporation PDM - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 PDM - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 MUPT5e3 - MUPT48e3 and MUPTB5e3 - MUPTB48e3 MECHANICAL and PACKAGING CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0. TERMINALS: Annealed matte-tin plating over copper and readily solderable per MIL-STD-750, method 2026. MARKING: Anode to TAB 1: "T" plus the last two digits of part number underlined, e.g. MUPT5e3 is T05, MUPT12e3 is T12 Bipolar: "B" plus the last two digits of part number underlined, e.g. MUPTB8e3 is B08, MUPTB12e3 is B12, etc. Please note dot suffix (for e3 suffix) POLARITY: Anode to TAB 1 (bottom) as described in marking above and on last page. TAPE & REEL option: Standard per EIA-481-B using 12 mm tape. Consult factory for quantities. WEIGHT: Approximately 0.016 gram. See package dimensions on last page. PART NOMENCLATURE Applicable to unidirectional MUPT5e3 - MUPT48e3 only: M UPT 5 R (e3) Reliability Level* M MA MX MXL *(See Hi-Rel NonHermetic Product Portfolio) RoHS Compliance e3 = RoHS Compliant Blank = non-RoHS Compliant Reverse Polarity Not available in 5V Rated Standoff Voltage 5V - 48V Powermite Applicable to bidirectional MUPTB5e3 - MUPTB48e3 only: M UPT B 5 (e3) Reliability Level* M MA MX MXL *(See Hi-Rel NonHermetic Product Portfolio) RoHS Compliance e3 = RoHS Compliant Blank = non-RoHS Compliant Rated Standoff Voltage 5V - 48V Powermite Bi-directional RF01103-1, Rev. B (19/05/17) (c)2017 Microsemi Corporation Page 2 of 5 MUPT5e3 - MUPT48e3 and MUPTB5e3 - MUPTB48e3 SYMBOLS & DEFINITIONS Definition Symbol V(BR) Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature range. Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform. Standby Current: The maximum current that will flow at the specified voltage and temperature. Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform. Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz. VWM PPP ID IPP C ELECTRICAL CHARACTERISTICS DEVICE TYPE RATED STANDOFF VOLTAGE MINIMUM BREAKDOWN VOLTAGE MAXIMUM STANDBY CURRENT MAXIMUM PEAK PULSE CURRENT* MAXIMUM CLAMPING VOLTAGE MAXIMUM TEMPERATURE COEFFICIENT of V(BR) VWM ID @ VWM IPP @ 10/1000 s A VC @ IPP V V(BR) 15.7 10.9 8.33 6.94 5.77 5.14 3.47 3.13 2.65 1.78 9.5 13.7 18.0 21.6 26.0 29.2 43.2 47.8 56.7 84.3 0.030 0.040 0.045 0.050 0.055 0.060 0.070 0.075 0.080 0.090 Uni-directional Bi-directional V V(BR) @ 1 mA V MUPT5 MUPT8 MUPT10 MUPT12 MUPT15 MUPT17 MUPT24 MUPT28 MUPT33 MUPT48 MUPTB5 MUPTB8 MUPTB10 MUPTB12 MUPTB15 MUPTB17 MUPTB24 MUPTB28 MUPTB33 MUPTB48 5 8 10 12 15 17 24 28 33 48 6.0 9.0 11.0 13.8 16.7 19.0 28.4 31.0 36.8 54.0 A 50 2 2 1 1 1 1 1 1 1 %/oC * See Figure 2 for IPP waveform of 10/1000 s test pulse. RF01103-1, Rev. B (19/05/17) (c)2017 Microsemi Corporation Page 3 of 5 MUPT5e3 - MUPT48e3 and MUPTB5e3 - MUPTB48e3 tp: Pulse duration is defined as that point where current decays to 50% of IPP and tr = 10 s lP - PULSE CURRENT - (% of IPP) PPP - PEAK PULSE POWER - (kW) GRAPHS EXPONENTIAL PULSE (Pulse time duration is defined as that point where the pulse current decays to 50% of IPP.) tp - PULSE TIME (ms) t- TIME- (ms) FIGURE 2 Pulse Waveform for 10/1000 s Exponential Surge CAPACITANCE - (pF) PPP - PEAK PULSE POWER - (% OF 25oC RATING) FIGURE 1 Peak Pulse Power vs. Pulse Duration measured at zero bias measured at VWM TEMPERATURE - (oC) FIGURE 3 Derating Curve RF01103-1, Rev. B (19/05/17) VWM - STAND-OFF VOLTAGE - (V) FIGURE 4 Typical Capacitance vs. Stand-Off Voltage (c)2017 Microsemi Corporation Page 4 of 5 MUPT5e3 - MUPT48e3 and MUPTB5e3 - MUPTB48e3 PACKAGE DIMENSIONS LOCKING TAB Ltr A B C D E F G H I J Dimensions Inch Millimeters Min Max Min Max 0.029 0.039 0.73 0.99 0.016 0.026 0.40 0.66 0.070 0.080 1.77 2.03 0.087 0.097 2.21 2.46 0.020 0.030 0.50 0.76 0.051 0.061 1.29 1.54 0.021 0.031 0.53 0.78 0.004 0.008 0.10 0.20 0.070 0.080 1.77 2.03 0.035 0.045 0.89 1.14 PAD LAYOUT Ltr A B C D E RF01103-1, Rev. B (19/05/17) (c)2017 Microsemi Corporation Dimensions Inch Millimeters 0.100 2.54 0.105 2.67 0.050 1.27 0.030 0.76 0.025 0.64 Page 5 of 5