RF01103-1, Rev. B (19/05/17) ©2017 Microsemi Corporation Page 1 of 5
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
Available
5V – 48V Powermite1, Surface Mount
Transient Voltage Suppressors
High-Reliability
Screening available in
reference to
MIL-PRF-19500
Tested in accordance
with the requirements of
AEC-Q101
DO-216AA
Package
DESCRIPTION
Microsemi’s unique and new Powermite MUPT series of transient voltage suppressors feature
oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible
electrical degradation under repeated surge conditions. Both unidirectional and bidirectional
configurations are available. In addition to its size advantages, the Powermite package includes a
fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at
assembly and a unique locking tab design serves as an integral heat sink. Its innovative design
makes this device fully compatible for use with automatic insertion equipment.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Powermite package with standoff voltages 5 to 48 V.
Both unidirectional and bidirectional polarities:
-Anode to case bottom (MUPT5e3 thru MUPT48e3)
-Bidirectional (MUPTB5e3 thru MUPTB48e3)
Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.
100% surge current testing of all parts.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
Both RoHS and non-RoHS compliant versions available.
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching and induced RF transients.
-Integral heat sink / locking tabs
-Fully metallic bottom side eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: MUPT5 /MUPTB8 to 17
Class 2: MUPT5 /MUPTB5 to 12
MAXIMUM RATINGS
Power Discretes & Modules
Business Unit
Discrete Products Group
Microsemi Corporation
PDM – Lawrence
6 Lake Street,
Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PDM – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Junction and Storage Temperature
TJ / TSTG
-65 to +150
Thermal Resistance Junction-to-Ambient (1)
RӨJA
240
Thermal Resistance Junction-to-Case (base tab)
RӨJC
15
Peak Pulse Power (see Figure 1 and Figure 2)
@ 8/20 µs
@10/1000µs
MUPT5e3 thru MUPT48e3:
MUPTB5e3 thru MUPTB48e3:
PPP
1000
1000
150
150
Rated Average Power Dissipation
(base tab < 112 oC)
PM(AV)
2.5
Impulse Repetition Rate (duty factor)
0.01
Solder Temperature @ 10 s
TSP
260
Notes: 1. When mounted on FR4 PC board with 1 oz copper.
RF01103-1, Rev. B (19/05/17) ©2017 Microsemi Corporation Page 2 of 5
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0.
TERMINALS: Annealed matte-tin plating over copper and readily solderable per MIL-STD-750, method 2026.
MARKING:
Anode to TAB 1: “T” plus the last two digits of part number underlined, e.g. MUPT5e3 is T05▪, MUPT12e3 is T12▪
Bipolar: “B” plus the last two digits of part number underlined, e.g. MUPTB8e3 is B08▪, MUPTB12e3 is B12▪, etc.
Please note dot suffix (for e3 suffix)
POLARITY: Anode to TAB 1 (bottom) as described in marking above and on last page.
TAPE & REEL option: Standard per EIA-481-B using 12 mm tape. Consult factory for quantities.
WEIGHT: Approximately 0.016 gram.
See package dimensions on last page.
PART NOMENCLATURE
Applicable to unidirectional MUPT5e3 – MUPT48e3 only:
M UPT 5 R (e3)
Reliability Level*
M
MA
MX
MXL
*(See Hi-Rel Non-
Hermetic Product
Portfolio)
Powermite
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Reverse Polarity
Not available in 5V
Rated Standoff Voltage
5V - 48V
Applicable to bidirectional MUPTB5e3 – MUPTB48e3 only:
M UPT B 5 (e3)
Reliability Level*
M
MA
MX
MXL
*(See Hi-Rel Non-
Hermetic Product
Portfolio)
Powermite
Bi-directional
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Rated Standoff Voltage
5V - 48V
RF01103-1, Rev. B (19/05/17) ©2017 Microsemi Corporation Page 3 of 5
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
ELECTRICAL CHARACTERISTICS
DEVICE TYPE
RATED
STANDOFF
VOLTAGE
VWM
MINIMUM
BREAKDOWN
VOLTAGE
V(BR) @ 1 mA
MAXIMUM
STANDBY
CURRENT
ID @ VWM
MAXIMUM PEAK
PULSE
CURRENT*
IPP @ 10/1000 s
MAXIMUM
CLAMPING
VOLTAGE
VC @ IPP
MAXIMUM
TEMPERATURE
COEFFICIENT
of V(BR)
αV(BR)
Uni-directional
Bi-directional
V
V
A
A
V
%/oC
MUPT5
MUPTB5
5
6.0
50
15.7
9.5
0.030
MUPT8
MUPTB8
8
9.0
2
10.9
13.7
0.040
MUPT10
MUPTB10
10
11.0
2
8.33
18.0
0.045
MUPT12
MUPTB12
12
13.8
1
6.94
21.6
0.050
MUPT15
MUPTB15
15
16.7
1
5.77
26.0
0.055
MUPT17
MUPTB17
17
19.0
1
5.14
29.2
0.060
MUPT24
MUPTB24
24
28.4
1
3.47
43.2
0.070
MUPT28
MUPTB28
28
31.0
1
3.13
47.8
0.075
MUPT33
MUPTB33
33
36.8
1
2.65
56.7
0.080
MUPT48
MUPTB48
48
54.0
1
1.78
84.3
0.090
* See Figure 2 for IPP waveform of 10/1000 µs test pulse.
SYMBOLS & DEFINITIONS
Symbol
Definition
V(BR)
Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VWM
Working Peak Standoff Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
PPP
Peak Pulse Power: The peak power that can be applied for a specified pulse width and waveform.
ID
Standby Current: The maximum current that will flow at the specified voltage and temperature.
IPP
Peak Pulse Current: The peak current that can be applied for a specified pulse width and waveform.
C
Capacitance: The capacitance in picofarads of the TVS as defined @ 0 volts at a frequency of 1 MHz.
RF01103-1, Rev. B (19/05/17) ©2017 Microsemi Corporation Page 4 of 5
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
GRAPHS
FIGURE 1 FIGURE 2
Peak Pulse Power vs. Pulse Duration Pulse Waveform for 10/1000 s Exponential Surge
TEMPERATURE – (oC) VWM – STAND-OFF VOLTAGE – (V)
FIGURE 3 FIGURE 4
Derating Curve Typical Capacitance vs. Stand-Off Voltage
PPP – PEAK PULSE POWER – (kW)
CAPACITANCE – (pF)
PPP – PEAK PULSE POWER – (% OF 25oC RATING)
measured at zero bias
measured at VWM
EXPONENTIAL PULSE
(Pulse time duration is
defined as that point
where the pulse current
decays to 50% of IPP.)
tp: Pulse duration is defined as
that point where current decays
to 50% of IPP and tr = 10 µs
lP – PULSE CURRENT – (% of IPP)
tp – PULSE TIME (ms)
t- TIME- (ms)
RF01103-1, Rev. B (19/05/17) ©2017 Microsemi Corporation Page 5 of 5
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
PACKAGE DIMENSIONS
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
0.029
0.039
0.73
0.99
B
0.016
0.026
0.40
0.66
C
0.070
0.080
1.77
2.03
D
0.087
0.097
2.21
2.46
E
0.020
0.030
0.50
0.76
F
0.051
0.061
1.29
1.54
G
0.021
0.031
0.53
0.78
H
0.004
0.008
0.10
0.20
I
0.070
0.080
1.77
2.03
J
0.035
0.045
0.89
1.14
PAD LAYOUT
Dimensions
Ltr
Inch
Millimeters
A
0.100
2.54
B
0.105
2.67
C
0.050
1.27
D
0.030
0.76
E
0.025
0.64
LOCKING TAB