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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 150 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW150 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C (MOSFET chip capability) 1 05 A
ID(RMS) External lead (current limit) 76 A
IDM TC= 25°C, Note 1 6 00 A
IAR TC= 25 °C 150 A
EAR TC= 25°C60mJ
EAS TC= 25°C3J
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS 5 V/ns
TJ£ 150°C, RG = 2 W
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 3 00 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
Weight 5g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3mA 150 V
VGS(th) VDS = VGS, ID = 8mA 2 .0 4.0 V
IGSS VGS = ±20 V, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C 100 mA
VGS = 0 V TJ = 125°C2 mA
RDS(on) VGS = 10 V, ID = IT12.5 mW
Notes 2, 3
Single MOSFET Die
98656 (03/17/00)
ISOPLUS 247TM
Advanced Technical Information
HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Backside)
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC and DC motor and servo controls
Amplifiers
Advantages
Easy assembly
Space savings
High power density
Low collector capacitance to ground
(low EMI)
G = Gate D = Drain
S = Source
* Patent pending
IXFR 150N15 VDSS = 150 V
ID25 = 105 A
RDS(on) = 12.5 mW
trr £ 250 ns
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = ITNotes 2, 3 5 0 7 5 S
Ciss 9100 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 2600 pF
Crss 1200 pF
td(on) 50 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = IT60 ns
td(off) RG = 1 W (External), Notes 2, 3 1 1 0 ns
tf45 ns
Qg(on) 360 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT65 nC
Notes 2, 3
Qgd 190 nC
RthJC 0.3 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 1 50 A
ISM Repetitive; Note 1 600 A
VSD IF = IT, VGS = 0 V, Notes 2, 3 1 . 5 V
trr 250 ns
QRM 1.1 mC
IRM 13 A
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
IXFR 150N15
Note: 1. Pulse width limited by TJM
2 . Pulse test, t £ 300 ms, duty cycle d £ 2 %
3. IT = 75A
ISOPLUS 247 (IXFR) OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025