Rev.3.00 Jun 05, 2006 page 1 of 6
RQJ0601DGDQS
Silicon P Channel MOS FET
Power Switching REJ03G1266-0300
Rev.3.00
Jun 05, 2006
Features
• Low on-resistance
RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK
)
R
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
D
2, 4
G1
S
3
Note: Marking is “DG”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS +10 / –20 V
Drain current ID –2.8 A
Drain peak current ID (pulse)Note1 –4.2 A
Body - drain diode reverse dr ain current IDR –2.8 A
Channel dissipation Pch Note2 1.5 W
Channel dissipation Pch (pulse)Note1 5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
RQJ0601DGDQS
Rev.3.00 Jun 05, 2006 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS +10 — — V IG = +100 µA, VDS = 0
Gate to source breakdown voltage V(BR)GSS –20 — — V IG = –100 µA, VDS = 0
Gate to source leak current IGSS — — +10 µA VGS = +8 V, VDS = 0
Gate to source leak current IGSS — — –10 µA VGS = –16 V, VDS = 0
Drain to source leak current IDSS — — –1 µA VDS = –60 V, VGS = 0
Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V VDS = –10 V, ID = –1 mA
RDS(on) — 124 155 mΩ I
D = –1.4 A, VGS = –10 VNote3 Drain to source on state resistance RDS(on) — 150 210 mΩ I
D = –1.4 A, VGS = –4.5 VNote3
Forward transfer admittance |yfs| 2.5 4.1 — S ID = –1.4 A, VDS = –10 VNote3
Input capacitance Ciss — 590 — pF
Output capacitance Coss — 75 — pF
Reverse transfer capacitance Crss — 36 — pF
VDS = -10 V, VGS = 0,
f = 1 MHz
Turn - on delay time td(on) — 20 — ns
Rise time tr — 41 — ns
Turn - off delay time td(off) — 43 — ns
Fall time tf — 78 — ns
ID = –1 A, VGS = –10 V,
RL = 10 Ω, Rg = 4.7 Ω
Total gate charge Qg — 9.6 — nC
Gate to source charge Qgs — 1.3 — nC
Gate to drain charge Qgd — 1.5 — nC
VDD = –10 V, VGS = –10 V,
ID = –2.8 A
Body - drain diode for ward voltage VDF — -0.8 — V IF = –1.5 A, VGS = 0Note3
Notes: 3. Pulse test
RQJ0601DGDQS
Rev.3.00 Jun 05, 2006 page 3 of 6
Main Characteristics
–10–8–6–4–2
00
–0.01
–0.1
–1
–10
–100
–0.01 –0.1 –1 –10 –100
0
–0.5
–1.0
–1.5
–2.0
–2.5
–0.5
–1.0
–1.5
–2.0
–2.5
0 –0.5 –1 –1.5 –2 –2.5 –3 –3.5 –4
–25°C
Tc = 75°C
V
DS
= –10 V
Pulse Test
25°C
–0.0001
–0.001
–0.01
–0.1
0 –0.5 –1 –1.5 –2 –2.5 –3
V
DS
= –10 V
Pulse Test
Tc = 75°C
25°C
–25°C
–0.5
–1
–1.5
–2
–2.5
–25 0 25 50 75 100 125 150
V
DS
= –10 V
Pulse Test
I
D
= –10 mA
–1 mA
–100 µA
2.0
1.5
0.5
0
1.0
0 25 75 100 125 15050
100 µs
PW = 10 ms
1 ms
DC Operation
Ta = 25°C
1 Shot Pulse
–2.3 V
–2.5 V
–2.7 V
–10 V
V
GS
= 0 V
Pulse Test
Tc = 25
°
C
–3 V
Ambient Temperature Ta (°C)
Channel Dissipation Pch (W)
Maximum Channel Power
Dissipation Curve Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Drain Current I
D
(A)
Typical Output Characteristics
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics (1)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics (2)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Cutoff Voltage vs.
Case Temperature
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage V
GS(off)
(V)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Operation in this area
is limited by R
DS(on)
RQJ0601DGDQS
Rev.3.00 Jun 05, 2006 page 4 of 6
0
–0.2
–0.4
–0.6
–0.8
0 –5 –10 –15 –20
0.01
0.1
1
–0.1 –1 –10
–25 0 25 50 75 100 125 150 –25 0 25 50 75 100 125 150
–25 0 25 50 75 100 125 150
0.1
1
10
–0.1 –1.0 –10.0 –1
–10
–100
–1000
–
0.5 A
–
0.2 A
–
1 A
Pulse Test
Tc = 25°C
–
1.5 A
100
150
200
250
300
50
100
150
200
250
–
1 A
–
0.5 A
I
D
=
–1.5
A
–
0.2 A
I
D
=
–
0.2 A,
–0.5
A,
–1
A,
–1.5
A
Pulse Test
V
GS
=
–
4.5 V
Pulse Test
V
GS
=
–
10 V
–25°C
Tc = 75°C
25°C
Pulse Test
V
DS
=
–
10 V
Pulse Test
V
GS
= 0 V
V
DS
=
–
60 V
V
DS
=
–
4.5 V
Pulse Test
Tc = 25°C
–
10 V
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS(on) (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current ID (A)
Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
vs. Case Temperature
Case Temperature Tc (°C)
Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Case Temperature
Case Temperature Tc (°C)
Drain to Source on State Resistance
RDS(on) (mΩ)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
Forward Transfer Admittance |yfs| (S)
Zero Gate Voltage Drain current vs.
Case Temperature
Case Temperature Tc (°C)
Zero Gate Voltage Drain current IDSS (nA)
RQJ0601DGDQS
Rev.3.00 Jun 05, 2006 page 5 of 6
0–0.8–0.4 –1.2 –1.6 –2.0
–1.5
–2.5
–2
–1
–0.5
0
1
10
100
1000
–0.01 –0.1 –1–10
–0.3
–0.4
–0.5
–0.6
–0.7
–0.9
–0.8
–25 0 25 50 75 100 125 15
0
V
DD
= –10 V
V
GS
= –10 V
Rg = 4.7 Ω
PW = 5 µs
Tc = 25°C
td(on)
td(off)
tf
tr
650
700
750
800
850
900
–10–8–6–4–20246810
V
DS
= 0 V
f = 1 MHz
–10 mA
I
D
= –1 A
V
GS
= 0
04 8121620
0
–20
–40
–80
–60
0
–4
–8
–12
–16
–100 –20
V
DS
V
GS
–25 V
V
DD
= –10 V
–25 V
V
DD
= –50 V
–10 V
–50 V
I
D
= –2.8 A
Tc = 25°C
Pulse Test
Tc = 25°C
–10V
–5V
V
GS
= 0 V, 5 V
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate Charge Qg (nC)
Gate to Source Voltage VGS (V)
Switching Characteristics
Drain Current ID (A)
Switching Time t (ns)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
Ciss, Coss, Crss (pF)
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage V
GS (V)
Ciss (pF)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Source Drain Voltage VSD (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Case Temperature Tc (°C)
Body-Drain Diode Forward Voltage VSDF (V)
1
10
100
1000
–0 –10 –20 –30 –40 –50 –60
Crss
Coss
V
GS
= 0 V
f = 1 MHz
Ciss
RQJ0601DGDQS
Rev.3.00 Jun 05, 2006 page 6 of 6
Package Dimensions
4.5 ± 0.1
1.8 Max 1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Previous Code
PLZZ0004CA-A UPAK / UPAKV
MASS[Typ.]
0.050gSC-62
RENESAS CodeJEITA Package Code Unit: mm
Package Name
UPAK
Ordering Information
Part Name Quantity Shipping Container
RQJ0601DGDQSTL-E 1000 pcs. φ178 reel, 12 mm Emboss taping
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