© 2017 IXYS CORPORATION, All Rights Reserved DS100293C(8/17)
P-Channel Enhancement Mode
Avalanche Rated
G = Gate D = Drain
S = Source Tab = Drain
GDS
TO-220 (IXTP)
D (Tab)
TO-252 (IXTY)
G
S
TO-263 (IXTA)
G
D (Tab)
S
D (Tab)
TrenchPTM
Power MOSFET
IXTY48P05T
IXTA48P05T
IXTP48P05T
VDSS = - 50V
ID25 = - 48A
RDS(on)
30m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C - 50 V
VDGR TJ= 25C to 150C, RGS = 1M- 50 V
VGSS Continuous 15 V
VGSM Transient 25 V
ID25 TC= 25C - 48 A
IDM TC= 25C, Pulse Width Limited by TJM -150 A
IATC= 25C - 48 A
EAS TC= 25C 300 mJ
PDTC= 25C 150 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-263 2.50 g
TO-220 3.00 g
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250A - 50 V
VGS(th) VDS = VGS, ID = - 250A - 2.0 - 4.5 V
IGSS VGS = 15V, VDS = 0V 50 nA
IDSS VDS = VDSS, VGS = 0V - 10 A
TJ = 125C - 250 A
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 30 m
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low RDS(ON) and QG
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY48P05T IXTA48P05T
IXTP48P05T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 16 26 S
Ciss 3660 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 495 pF
Crss 215 pF
td(on) 20 ns
tr 15 ns
td(off) 30 ns
tf 13 ns
Qg(on) 53 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 nC
Qgd 21 nC
RthJC 0.83C/W
RthCS TO-220 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 48 A
ISM Repetitive, Pulse Width Limited by TJM -192 A
VSD IF = IS, VGS = 0V, Note 1 -1.5 V
trr 30 ns
QRM 43.4 nC
IRM - 2.8 A
Resistive Switching Times
VGS = -10V, VDS = - 30V, ID = 0.5 • ID25
RG = 3 (External)
IF = 0.5 • ID25, -di/dt = -100A/s
VR = - 25V, VGS = 0V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY48P05T IXTA48P05T
IXTP48P05T
Fig. 1. Output Characteristics @ T
J
= 25
o
C
-48
-40
-32
-24
-16
-8
0
-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 5V
- 6V
- 4V
- 7V
- 8V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 6V
- 7V
- 5V
- 8V
- 9V
- 4V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
-48
-40
-32
-24
-16
-8
0
-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 6V
- 5V
- 4V
- 7V
- 8V
Fig. 4. R
DS(on)
Normalized to I
D
= - 24A Value vs.
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 48A
I
D
= - 24A
Fig. 5. R
DS(on)
Normalized to I
D
= - 24A Value vs.
Drain Current
0.9
1.1
1.3
1.5
1.7
1.9
-140-120-100-80-60-40-200
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
-55
-45
-35
-25
-15
-5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY48P05T IXTA48P05T
IXTP48P05T
Fig. 7. Input Admittance
-60
-50
-40
-30
-20
-10
0
-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
-70-60-50-40-30-20-100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-160
-140
-120
-100
-80
-60
-40
-20
0
-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 27.5V
I
D
= - 24A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarad
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
10ms
1ms
R
DS(on)
Limit
100ms
DC
-
-
- -
-
-
-
100μs
25μs
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY48P05T IXTA48P05T
IXTP48P05T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
13.0
13.5
14.0
14.5
15.0
15.5
16.0
-48-44-40-36-32-28-24
ID - Amperes
t
r
- Nanoseconds
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
8
10
12
14
16
18
20
22
24
26
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
t
r
- Nanoseconds
18
19
20
21
22
23
24
25
26
27
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 125
o
C, V
GS
= -10V
V
DS
= - 30V
I
D
= - 24A, - 48A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
11
12
13
14
15
16
17
18
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
f
- Nanoseconds
24
26
28
30
32
34
36
38
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
I
D
= - 48A, - 24A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
23
26
29
32
35
38
41
-48-44-40-36-32-28-24
ID - Amperes
t
f
- Nanoseconds
11
12
13
14
15
16
17
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
T
J
= 25
o
C, 125
o
C
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
13.5
14.0
14.5
15.0
15.5
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3Ω, V
GS
= -10V
V
DS
= - 30V
I
D
= - 24A
I
D
= - 48A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
5
10
15
20
25
30
35
3456789101112131415
RG - Ohms
t
f
- Nanoseconds
10
20
30
40
50
60
70
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= -10V
V
DS
= - 30V
I
D
= - 24A
I
D
= - 48A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY48P05T IXTA48P05T
IXTP48P05T
IXYS REF: T_48P05T(A2-P05) 10-18-10
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
L1
b2
e1
L4
E A
c2
H
A1
A2
L2
L
A
e c
0
e1 e1 e1 e1 e1
OPTIONAL 5.55MIN
1.25MIN
6.50MIN
2.28
6.40
BOTTOM
VIEW
2.85MIN
LAND PATTERN RECOMMENDATION
4
1 2 3
4
L3
b3
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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