DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF(AV)M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings 60 30 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 210 A A TVJ = 150C; t = 10 ms (50 Hz), sine VR = 0 V; t = 8.3 ms (60 Hz), sine 175 185 A A TVJ = 45C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 185 A2s A2s TVJ = 150C; t = 10 ms (50 Hz), sine VR = 0 V; t = 8.3 ms (60 Hz), sine 155 145 A2s A2s -55...+150 150 -55...+150 C C C 260 C 2500 V~ TC = 95C; 180O sine (RMS current limited) TVJ = 45C; VR = 0 V; TVJ TVJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz RMS; IISOL 1 mA FC Mounting Force Weight typical Symbol Conditions IR TVJ = 25C; VR = VRRM TVJ = TVJM; VR = VRRM 0.05 1.5 mA mA VF IF = 45 A; 1.45 V VTO rT For power loss calculations only TVJ = TVJM 0.80 15 V m 1.1 K/W K/W 11...65 / 2.4...11 2 Isolated back surface* Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance(15pF typical) International standard package Epoxy meets UL 94V-0 ISOPLUS220 Outline (2 leads) N / ib g Characteristic Values typ. max. TVJ = 25C RthJC RthCH 0.6 Note: See DSI 30..A data sheet for electrical characteristic curves. IXYS reserves the right to change limits, conditions and dimensions. (c) 2003 IXYS All rights reserved http://store.iiic.cc/ DS98791A(07/03)