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IXYS reserves the right to change limits, conditions and dimensions.
Rectifier Diode
ISOPLUS220TM
Electrically Isolated Back Surface
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance(15pF
typical)
International standard package
Epoxy meets UL 94V-0
C
A
C
A
ISOPLUS 220TM
Isolated back surface*
Symbol Conditions Maximum Ratings
IFRMS 60 A
IFAV TC = 95°C; 180O sine (RMS current limited) 30 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
VR= 0 V; t = 8.3 ms (60 Hz), sine 210 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 175 A
VR= 0 V; t = 8.3 ms (60 Hz), sine 185 A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine 200 A2s
VR= 0 V; t = 8.3 ms (60 Hz), sine 185 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 155 A2s
VR= 0 V; t = 8.3 ms (60 Hz), sine 145 A2s
TVJ -55...+150 °C
TVJM 150 °C
Tstg -55...+150 °C
TL1.6 mm (0.062 in.) from case for 10 s 260 °C
VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2500 V~
FCMounting Force 11...65 / 2.4...11 N / ib
Weight typical 2 g
VRRM = 800 - 1200 V
IF(AV)M = 30 A
DSI 30
VRSM VRRM Type
V V
900 800 DSI 30-08AC
1300 1200 DSI 30-12AC
Symbol Conditions Characteristic Values
typ. max.
IRTVJ = 25°C; VR= VRRM 0.05 mA
TVJ = TVJM;V
R= VRRM 1.5 mA
VFIF = 45 A; TVJ = 25°C 1.45 V
VTO For power loss calculations only 0.80 V
rTTVJ = TVJM 15 mΩ
RthJC 1.1 K/W
RthCH 0.6 K/W
Note: See DSI 30..A data sheet for electrical characteristic curves.
DS98791A(07/03)
Preliminary Data Sheet
ISOPLUS220 Outline (2 leads)
http://store.iiic.cc/
