1
Motorola Thyristor Device Data
Reverse Blocking Triode Thyristors
. . . PNPN devices designed for high volume consumer applications such as
temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
•Passivated Surface for Reliability and Uniformity
•Power Rated at Economical Prices
•Practical Level Triggering and Holding Characteristics
•Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•Recommended Electrical Replacement for C106
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
*Repetitive Peak Forward and Reverse Blocking Voltage (1)
(1/2 Sine W ave)
(RGK = 1000 ohms, TC = –40 to +110°C)
VDRM
or
VRRM 400
Volts
*Non–repetitive Peak Reverse Blocking Voltage
(1/2 Sine W ave, RGK = 1000 ohms,
TC = –40° to +110°C)
VRSM
450
Volts
*Average On–State Current
(TC = –40 to + 90°C)
(TC = +100°C)
IT(AV) 2.6
1.6
Amps
*Surge On–State Current
(1/2 Sine Wave, 60 Hz, TC = +90°C)
(1/2 Sine W ave, 1.5 ms, TC = +90°C)
ITSM 25
35
Amps
Circuit Fusing
(t = 8.3 ms) I2t 2.6 A2s
*Peak Gate Power
(Pulse Width = 10 µs, TC = 90°C) PGM 0.5 Watts
*Indicates JEDEC Registered Data. (continued)
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by 2N6240/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
CASE 77-08
(TO-225AA)
STYLE 2
SCRs
4 AMPERES RMS
400 VOLTS
K
A
G
A
K
AG
2N6240
2 Motorola Thyristor Device Data
MAXIMUM RATINGS — continued (TJ = 25°C unless otherwise noted.)
Rating UnitValueSymbol
*Average Gate Power
(t = 8.3 ms, TC = 90°C) PG(AV) 0.1 Watt
Peak Forward Gate Current IGM 0.2 Amp
Peak Reverse Gate Voltage VRGM 6Volts
*Operating Junction Temperature Range TJ–40 to +110 °C
*Storage Temperature Range Tstg –40 to +150 °C
Mounting Torque(1) 6in. lb.
THERMAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
*Thermal Resistance, Junction to Case RθJC — 3 °C/W
Thermal Resistance, Junction to Ambient RθJA —75 °C/W
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS (TC = 25°C and RGK = 1000 ohms unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
*Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM)T
C
= 25°C
TC = 110°C
IDRM, IRRM —
——
—10
200 µA
µA
*Peak Forward “On” Voltage
(ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) VTM — — 2.2 Volts
Gate Trigger Current (Continuous dc)(2)
(VAK = 12 Vdc, RL = 24 Ohms)
*(VAK = 12 Vdc, RL = 24 Ohms, TC = –40°C)
IGT —
——
—200
500
µA
Gate Trigger Voltage (Continuous dc)
(Source Voltage = 12 V, RS = 50 Ohms)
*(VAK = 12 Vdc, RL = 24 Ohms, TC = –40°C)
VGT — — 1 Volts
Gate Non–Trigger Voltage
(VAK = Rated VDRM, RL = 100 Ohms, TC = 110°C) VGD 0.2 — — Volts
Holding Current
(VAK = 12 Vdc, IGT = 2 mA) TC = 25°C
*(Initiating On–State Current = 200 mA) TC = –40°C
IH—
——
—5
10
mA
*Total T urn–On Time
(Source Voltage = 12 V, RS = 6 k Ohms)
(ITM = 8.2 A, IGT = 2 mA, Rated VDRM)
(Rise T ime = 20 ns, Pulse Width = 10 µs)
tgt — 2 — µs
Forward V oltage Application Rate
(VD = Rated VDRM, TC = 110°C) dv/dt — 10 — V/µs
*Indicates JEDEC Registered Data.
1. Torque rating applies with use of compression washer (B52200F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably
lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN–209 B)
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum
results an activated flux (oxide removing) is recommended.
2. Measurement does not include RGK current.
2N6240
3
Motorola Thyristor Device Data
dc
106
82
94
110
102
98
0 0.8 1.6 2.4 3.2
90
4.0
IT(AV), AVERAGE FORWARD CURRENT (AMP)
86
90
50
30
110
FIGURE 1 – MAXIMUM CASE TEMPERATURE
0
FIGURE 2 – MAXIMUM AMBIENT TEMPERATURE
IT(AV), AVERAGE FORWARD CURRENT (AMP)
0.1 0.2 0.3 0.4
180
°
90
°
60
°
α
= 30
°
dc
C
°
T , MAXIMUM ALLOW ABLE CASE TEMPERATURE ( C)
A
°
T , MAXIMUM ALLOW ABLE AMBIENT
0.4 1.2 2.0 2.8 3.6
α
0π
f = 60 Hz
120
°
70
0.5 0.6 0.7 0.8
180
°
90
°
60
°
α
= 30
°
α
0π
f = 60 Hz
TEMPERATURE ( C)
2N6240
4 Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. GATE
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.055 1.15 1.39
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 ––– 1.02 –––
__
CASE 77–08
(TO–225AA)
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2N6240/D
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