TLP3051,TLP3052
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo−Triac
TLP3051,TLP3052
Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
The TOSHIBA TLP3051 and TLP3052 consist of a photo−triac optically
coupled to a gallium arsenide infrared emitting diode in a six lead plastic
DIP package.
· Peak off−state voltage: 600 V (min.)
· Trigger LED current: 15 mA (max.) (TLP3051)
10 mA (max.) (TLP3052)
· On−state current: 100 mA (max.)
· UL recognized: UL1577, file no. E67349
Isolation voltage: 5000 Vrms (min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 08.87,
Certificate no. 68329
Maximum operating insulation voltage: 630 VPK
Highest permissible over voltage: 6000 VPK
(Note) When a VDE0884 approved type is needed,
please designate the “option (D4)“
7.62 mm pich 10.16 mm pich
standard type (LF2) type
· Creepage distance: 7.0 mm (min.) 8.0 mm (min.)
Clearance: 7.0 mm (min.) 8.0 mm (min.)
Insulation thickness: 0.5 mm (min.) 0.5 mm (min.)
Unit in mm
TOSHIBA 11−9A2
Weight: 0.44 g
Pin Configuration(top
view)
1 : Anode
2 : Cathode
3 : Nc
4 : Terminal 1
6 : Terminal 2
4
61
2
3
TLP3051,TLP3052
2002-09-25
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Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating
(Ta ≥ 53°C) ∆IF/°C -0.7 mA/°C
Peak forward current
(100 µs pulse, 100 pps) IFP 1 A
Power dissipation PD 100 mW
Power dissipation derating
(Ta ≥ 25°C) ∆PD/°C -1.0 mW/°C
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Off-state output terminal
voltage VDRM 600 V
Ta = 25°C 100
On-state RMS
current Ta = 70°C
IT(RMS)
50
mA
On-state current derating
(Ta ≥ 25°C) ∆IT/°C -1.1 mA/°C
Peak on-state current
(100µs pulse, 120 pps) ITP 2 A
Peak nonrepetitive surge
current (Pw = 10 ms, DC = 10%) ITSM 1.2 A
Power dissipation PD 300 mW
Power dissipation derating
(Ta ≥ 25°C) ∆PD/°C -4.0 mW/°C
Detector
Junction temperature Tj 115 °C
Storage temperature range Tstg -55~150 °C
Operating temperature range Topr -40~100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 330 mW
Total package power dissipation
derating (Ta ≥ 25°C) ∆PT/°C -4.4 mW/°C
Isolation voltage
(AC, 1 min., R.H.≤ 60%) (Note 1) BVS 5000 Vrms
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VAC ― ― 240 Vac
Forward current IF* 15 20 25 mA
Peak on-state current ITP ― ― 1 A
Operating temperature Topr -25 ― 85 °C
※ In the case of TLP3052
TLP3051,TLP3052
2002-09-25
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V ― ― 10 µA
LED
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Peak off-state current IDRM V
DRM = 600 V ― 10 1000 nA
Peak on-state voltage VTM I
TM = 100 mA ― 1.7 3.0 V
Holding current IH ― ― 1.0 ― mA
Critical rate of rise of
off-state voltage dv/dt Vin = 240 Vrms, Ta = 85°C
(Fig.1) ― 500 ― V/µs
Detector
Critical rate of rise of
commutating voltage dv/dt (c) Vin = 60 Vrms, IT = 15mA
(Fig.1) ― 0.2 ― V/µs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
TLP3051 ― ― 15
Trigger LED current
TLP3052
IFT V
T = 6 V
― 5 10
mA
Capacitance input to output CS V
S = 0, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS V
S = 500 V, (R.H.≤ 60%) 5×1010 1014 ― Ω
AC, 1 minute 5000 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― V
dc
Fig. 1 dv/dt test circuit
Vin ＋5V,VCC
dv/dt（c）
0V
dv/dt
～
Rin
RL
4kΩ
1
2
3
6
4
VCC 120Ω
+
-
TLP3051,TLP3052
2002-09-25
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Ambient temperature Ta (℃)
Allowable forward current
I
F (mA)
IF – Ta
0
120 100 80 60 40 20 0
－20
10
20
30
40
50
60
Allowable pulse forward current
I
FP (mA)
IFP – DR
Duty cycle ratio DR
100
3 10－1 3 10－2
3 10－3
3
10
30
50
100
300
500
3000
1000
Pulse width≦100µs
Ta＝25℃
Ambient temperature Ta (℃)
R.M.S ON-State current
I
T(RMS) (mA)
IT(RMS)– Ta
0
120 100 80 60 40 20 0 －20
20
40
60
80
100
120
Forward current IF (mA)
IF – VF
Forward voltage VF（V)
1.8
1.6 1.4 1.2 1.0
0.8 0.6
0.1
0.3
0.5
1
10
30
100
50
Ta＝25℃
5
3
Pulse forward current IFP (mA)
I
FP – VFP
Pulse forward voltage VFP (V)
Pulse width≦10µs
Repetitive frequency
=100Hz
Ta= 2 5 ℃
1
3.0
2.6
1.8
1.4 1.0 0.6
3
5
10
30
300
500
1000
2.2
50
100
Forward voltage temperatureCoefficient
ΔVF / ΔTa (mV / ℃)
ΔVF / ΔTa – I F
50 3 1 0.5 0.3 0.1 10
－0.4
－0.8
－1.2
－1.6
－2.0
－2.4
－2.8
－3.2
5 30
Forward current IF (mA)
TLP3051,TLP3052
2002-09-25
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Ambient temperature Ta (℃)
Trigger LED current IFT
（arbitrary unit）
Normalized IFT － Ta
VT=6V
100
20
－40 －20 0 40 60 80
0.3
0.1
0.5
1
1.2
2
3
Ambient temperature Ta (℃)
Peak off-state current IDRM
（Arbitrary unit）
Normalized IDRM － Ta
VDRM=Ratend
100
40
0 20 60 80
100
101
102
103
Ambient temperature Ta (℃)
Off-state output terminal voltage
V DRM（arbitrary unit）
Normalized VDRM － Ta
100
20
－40 －20 0 40 60 80
0.6
0.2
0.8
0.4
1.0
1.2
1.4
LED current pulse width Pw (µs)
Normalized LED current
IF / IFT
Normalized LED Current
－LED Current Pulse Width
1000
50
10 30 100 300 500
1.2
1
3
5
10
1.4
1.6
1.8
2
Ambient temperature Ta (℃)
Holding current IH
（arbitrary unit）
Normalized IH － Ta
100
20
－40 －20 0 40 60 80
0.3
0.1
0.5
1
1.2
2
3
TLP3051,TLP3052
2002-09-25
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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE
