GU-E PhotoMOS (AQW21
❍
EH)
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the SMD terminal shape indicator “A” and the package type indicator “X” and “Z” are omitted from the seal.
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°
C 77
°
F)
General use and
economy type.
DIP (2 Form A) 8-pin type.
Reinforced insulation
5,000V type.
GU-E PhotoMOS
(AQW21
❍
EH)
Type I/O isolation
voltage
Output rating*
Part No.
Packing quantity
Through hole
terminal Surface-mount terminal
Load
voltage
Load
current Tube packing style
Tape and reel packing style
Tube Tape and
reel
Picked from the
1/2/3/4-pin side
Picked from the
5/6/7/8-pin side
AC/DC
type
Reinforced
5,000 V
60 V 500 mA AQW212EH AQW212EHA AQW212EHAX AQW212EHAZ 1 tube contains
40 pcs.
1 batch contains
400 pcs.
1,000 pcs.
350 V 120 mA AQW210EH AQW210EHA AQW210EHAX AQW210EHAZ
400 V 100 mA AQW214EH AQW214EHA AQW214EHAX AQW214EHAZ
600 V 40 mA AQW216EH AQW216EHA AQW216EHAX AQW216EHAZ
Item Symbol AQW212EH(A) AQW210EH(A) AQW214EH(A) AQW216EH(A) Remarks
Input
LED forward current I
F
50mA
LED reverse voltage V
R
5V
Peak forward current I
FP
1A f =100 Hz,
Duty factor = 0.1%
Power dissipation P
in
75mW
Output
Load voltage (peak AC) V
L
60 V 350 V 400 V 600 V
Continuous load current
(peak AC) I
L
0.5 A
(0.6 A)
0.12 A
(0.14 A)
0.1 A
(0.13 A)
0.04 A
(0.05 A)
Peak AC, DC
( ): in case of using
only 1 channel
Peak load current I
peak
1.5 A 0.36 A 0.3 A 0.15 A 100 ms (1 shot),
V
L
= DC
Power dissipation P
out
800mW
Total power dissipation P
T
850mW
I/O isolation voltage V
iso
5,000 V AC
Temperature
limits
Operating T
opr
–40
°
C to +85
°
C –40
°
F to +185
°
FNon-condensing at
low temperatures
Storage T
stg
–40
°
C to +100
°
C –40
°
F to +212
°
F
TESTING
mm inch
3.2
.126
6.4
.252
9.86
.388
2.9
.114
6.4
.252
9.86
.388
1
2
3
4
8
7
6
5
FEATURES
1. Reinforced insulation 5,000 V type
More than 0.4 mm internal insulation
distance between inputs and outputs.
Con-forms to EN41003, EN60950
(reinforced insulation).
2. Compact 8-pin DIP size
The device comes in a compact
(W)6.4×(L)9.86×(H)3.2 mm
(W).252×(L).388×(H).126 inch, 8-pin DIP
size (through hole terminal type).
3. Applicable for 2 Form A use as well
as two independent 1 Form A use
4. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
5. High sensitivity, high speed
response.
Can control a maximum 0.14 A load
current with a 5 mA input current. Fast
operation speed of 0.5 ms (typical).
(AQW210EH)
6. Low-level off state leakage current
TYPICAL APPLICATIONS
• Modem
• Telephone equipment
• Security equipment
• Sensors
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQW21
❍
EH)
2. Electrical characteristics (Ambient temperature: 25
°
C 77
°
F)
Note: Recommendable LED forward current I
F
= 5 to 10mA.n
*Turn on/Turn off time
■
■
■
REFERENCE DATA
Item Symbol AQW212EH(A) AQW210EH(A) AQW214EH(A) AQW216EH(A) Condition
Input
LED operate
current
Typical I
Fon
1.2mA I
L
=Max.
Maximum 3.0mA
LED turn off
current
Minimum I
Foff
0.4mA I
L
=Max.
Typical 1.1mA
LED dropout
voltage
Typical V
F
1.25 V (1.14 V at I
F
=5mA) I
F
=50mA
Maximum 1.5V
Output
On resistance Typical R
on
0.83
Ω
18
Ω
26
Ω
52
Ω
I
F
=5mA
I
L
=Max.
Within 1 s on time
Maximum 2.5
Ω
25
Ω
35
Ω
120
Ω
Off state leakage
current Maximum I
Leak
1
µ
AI
F
=0mA
V
L
=Max.
Transfer
characteristics
Tu rn on time* Typical T
on
1ms 0.5ms I
F
=5mA
I
L
=Max.
Maximum 4ms 2.0ms
Tu rn off time* Typical T
off
0.08ms 0.04ms I
F
=5mA
I
L
=Max.
Maximum 1.0ms
I/O capacitance Typical C
iso
0.8pF f =1MHz
V
B
=0V
Maximum 1.5pF
Initial I/O isolation
resistance Minimum R
iso
1,000M
Ω
500V DC
Ton
Input
Output 10%
90%
Toff
1-(1). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –20°C to +85°C
–4°F to +185°F
1-(2). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
1-(3). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
0
200
150
100
50
0204060–20
8085
100–40
AQW210EH
(using only 1 channel)
AQW210EH
(using 2 channels)
AQW214EH
(using only 1 channel)
AQW214EH
(using 2 channels)
Load current, mA
Ambient temperature, °C
0
0.6
0.2
0.1
0.8
0.7
–40 –20 0 20 40 60
80
100
0.4
0.3
0.5
85
AQW212EH
(using only 1 channel)
AQW212EH
(using 2 channels)
Load current, mA
Ambient temperature, °C
0
0.06
0.02
0.01
0.07
–40 –20 0 20 40 60
80
100
0.04
0.03
0.05
85
AQW216EH
(using only 1 channel)
AQW216EH
(using 2 channels)
Load current, mA
Ambient temperature, °C
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQW21
❍
EH)
2-(1). On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
2-(2). On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
2-(3). On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
10
20
30
40
–40
50
0–20 20 40 60 8085
AQW210EH
AQW214EH
On resistance, Ω
Ambient temperature, °C
0–40 –20
2
1.5
1
0.5
0204060
80 85
AQW212EH
On resistance, Ω
Ambient temperature, °C
0–40 –20
20
40
60
80
100
0204060
80 85
AQW216EH
On resistance, Ω
Ambient temperature, °C
3. Turn on time vs. ambient temperature
characteristics
Sample: All types
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
4. Turn off time vs. ambient temperature
characteristics
Sample: All types
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5. LED operate current vs. ambient
temperature characteristics
Sample: All types; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
0.5
1
1.5
2
3
–40 –20
2.5
0204060
80 85
AQW216EH
AQW212EH
AQW210EH
AQW214EH
Turn on time, ms
Ambient temperature, °C
0
0.05
0.1
0.15
0.2
0.3
–40 –20
0.25
0204060
80 85
AQW216EH
AQW212EH
AQW210EH
AQW214EH
Turn off time, ms
Ambient temperature, °C
0
1
2
3
4
–40
5
0–20 20 40 60
8085
LED operate current, mA
Ambient temperature, °C
6. LED turn off current vs. ambient temperature
characteristics
Sample: All types; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
7. LED dropout voltage vs. ambient
temperature characteristics
Sample: All types; LED current: 5 to 50 mA
8-(1). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25°C 77°F
0
1
2
3
4
–40
5
0–20 20 40 60
8085
LED turn off current, mA
Ambient temperature, °C
0–20–40 20 40 60
8085
1.5
1.4
1.3
1.2
1.1
1.0
0
5mA
50mA
30mA
20mA
10mA
LED dropout voltage, V
Ambient temperature, °C
53
–5 –3
140
120
60
40
–20
–40
–60
–80
–100
–120
–140
100
80
–2–4
24
AQW210EH
AQW214EH
–120
1
Current, mA
Voltage, V
8-(2). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 3 and 4;
Ambient temperature: 25°C 77°F
8-(3). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 3 and 4;
Ambient temperature: 25°C 77°F
9-(1). Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25°C 77°F
AQW212EH
–0.4
–0.6
–0.2
–0.5 0.5 1–1 0
0.6
0.4
0.2
0
Voltage, V
Current, A
AQW216EH
–0.04
–0.08
–0.06
–0.02
0–4–6 –2 624
0.08
0.04
0.06
0.02
0
Voltage, V
Current, A
060 100
20 40 80
AQW214EH
AQW210EH
10–3
10–6
10–9
10–12
Off state leakage current, A
Load voltage, V
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU-E PhotoMOS (AQW21❍EH)
9-(2). Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25°C 77°F
10. Turn on time vs. LED forward current
characteristics
Sample: All types
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
11. Turn off time vs. LED forward current
characteristics
Sample: All types
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
806040200 100
AQW216EH
AQW212EH
10–13
10–11
10–9
10–7
10–5
10–3
Off state leakage current, A
Load voltage, V
0
0.5
1
1.5
2
3
2.5
10 20 30 40 50 60
AQW210EH
AQW214EH
Turn on time, ms
LED forward current, mA
AQW216EHAQW212EH
0
0.05
0.1
100203040
0.2
50 60
0.15
AQW216EH
AQW212EH
AQW210EH
AQW214EH
Turn off time, ms
LED forward current, mA
12-(1). Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz; Ambient temperature: 25°C 77°F
12-(2). Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz; Ambient temperature: 25°C 77°F
0
50
40
30
20
10
10 20 30 40 500
AQW216EH
Output capacitance, pF
Applied voltage, V
AQW210EH
AQW214EH
0
50
100
150
200
020530251510
AQW212EH
Output capacitance, pF
Applied voltage, V
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
