SS8550 — 2W Output Amplifier of Portable Radios in Class B Push-pull Operation
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.0.0 1
March 2008
SS8550
2W Output Amplifier of Portable Radios in Class B Push-pull Operation
Features
• Complimentary to SS8050
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=1W (TC=25×C)
Absolute Maximum Ratings Ta=25×C unless otherwise noted
Electrical Characteristics Ta=25×C unless otherwise note d
hFEClassification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -6 V
ICCollector Current -1.5 A
PCCollector Power Dissipation 1 W
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -100μA, IE=0 -40 V
BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V
BVEBO Emitter-Base Breakdown Voltag e IE= -100μA, IC=0 -6 V
ICBO Collector Cut-off Current VCB= -35V, IE=0 -100 nA
IEBO Emitter Cut-off Current VEB= -6V, IC=0 -100 nA
hFE1
hFE2
hFE3
DC Current Gain VCE= -1V, IC= -5mA
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
45
85
40
170
160
80 300
VCE (sat) Collector-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.28 -0.5 V
VBE (sat) Base-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.98 -1.2 V
VBE (on) Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 V
Cob Output Capacitance VCB= -10V, IE=0
f=1MHz 15 pF
fTCurrent Gain Bandwidth Product VCE= -10V, IC= -50mA 100 200 MHz
Classification B C D
hFE2 85 ~ 160 120 ~ 200 160 ~ 300
1. Emitter 2. Base 3. Collector
TO-92
1
SS8550 — Features
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.0.0 2
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Sat uration Voltage
Collector-Emitter Satura ti o n Volta g e Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
-0.4 -0.8 -1.2 -1.6 -2.0
-0.1
-0.2
-0.3
-0.4
-0.5
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 VCE = -1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-10
-100
-1000
-10000
VCE(sat)
VBE(sat)
IC=10IB
VBE(sat), V CE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100 VCE = -1V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100 -1000
1
10
100 f=1MHz
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
10
100
1000 VCE=-10V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
SS8550 FeaturesSS8550
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.0.0 3
