BD241BFP
BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
■STMicroelectronicsPREFERRED
SALESTYPES
■COMPLEMENTARYPNP - NPNDEVICES
■FULLYMOLDED ISOLATEDPACKAGE
■2000V DC ISOLATION(U.L. COMPLIANT)
APPLICATIONS
■GENERALPURPOSESWITCHING
■GENERALPURPOSEAMPLIFIERS
DESCRIPTION
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolatedpackage.
It is inteded for power linear and switching
applications.
The complementaryPNP types is the BD242BFP.
INTERNAL SCHEMATIC DIAGRAM
February 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241BFP
PNP BD242BFP
VCER Collector-Base Voltage (RBE =100Ω)90 V
VCEO Collector-Emitter Voltage (IB=0) 80 V
V
EBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 3 A
ICM Collector Peak Current 5 A
IBBase Current 1 A
Ptot Total Dissipation at Tc≤25 oC24 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220FP
1/4