Io = 500 mA
VR = 20 Volts
RoHS Device
RB551V-30-HF
Page 1
QW-JB011
REV:A
A
mA
V
V
2
500
20
30
IO
VR
VRM
IFSM
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
°C
°C
+125
+125
-40TSTG
Tj
Storage temperature
Junction temperature
Average forward current
Reverse voltage
Repetitive peak reverse voltage
Forward current,surge peak
Parameter Conditions Symbol Min Typ
Max
Unit
uA
V
100
0.36
IR
VF
Reverse current
Forward voltage
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 20 V
IF = 100 mA
Maximum Ratings (at TA=25°C unless otherwise noted)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Features
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
Mechanical data
-Case: SOD-323 Standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750D, method 2026.
-Mounting position: Any.
-Low reverse current.
Comchip Technology CO., LTD.
Dimensions in inches and (millimeter)
SOD-323
0.071 1.80
0.063(1.60)
( )
0.006 0.15( )Max.
0.47
IF = 500 mA
0.039
0)
(1.00)Max.
0.106 2.70
0.098(2.50)
( )
0.055 1.40
0.047(1.20)
( )
0.019 0.475( )REF
0.014 0.35
0.010(0.25)
( )
0.004
0)
(0.10)Max.
SMD Schottky Barrier Rectifiers
Halogen Free