© 2010 IXYS All rights reserved 1 - 6
20101007a
VUB 116-16NO1
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
Rectifier
Diode Fast Recov.
Diode IGBT
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IdAVM = 116 A VF = 2.76 V IC80 = 67 A
IFSM = 700 A IFSM = 200 A VCEsat = 3.5 V
Application:
• Drive Inverters with brake system
Features:
• Soldering connections for
PCB mounting
• Convenient package outline
• Optional NTC
Package:
• Two functions in one package
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
• UL registered, E72873
Part name (Marking on product)
VUB116-16NO1
E72873
NTC
~ 6+7
~ 4+5
~ 2+3
10+11
8+9
12 13 19+20
1
18 17 21+22
p h a s e - o u t
Recommended replacement:
VUB 116-16NOXT
© 2010 IXYS All rights reserved 2 - 6
20101007a
VUB 116-16NO1
IXYS reserves the right to change limits, test conditions and dimensions.
IGBT
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C to 150°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient -20
-30 +20
+30 V
V
IC25
IC80
collector current DC TC = 25°C
DC TC = 80°C 95
67 A
A
Ptot total power dissipation TC = 25°C 380 W
VCE(sat) collector emitter saturation voltage IC = 100 A; VGE = 15 V TVJ = 25°C 3.5 V
VGE(th) gate emitter threshold voltage IC = 8 mA TVJ = 25°C 4.5 6.45 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
VCE = 0.8·VCES; VGE = 0 V TVJ = 125°C 0.1
0.5 mA
mA
Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 3.8 nF
td(on)
td(off)
Eon
Eoff
turn-on delay time
turn-off delay time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 720 V; IC = 50 A
VGE = ±15 V; RG = 22 W; L = 100 µH
150
680
6
4
ns
ns
mJ
mJ
ICM
VCEK
reverse bias safe operating area RBSOA; VGE = ±15 V; RG = 22 W; L = 100 µH
clamped inductive load
; TVJ = 125°C 100
< VCES-LS·dI /dt A
V
tSC
(SCSOA) short circuit safe operating area VCE = 720 V; VGE = ±15 V; TVJ = 125°C
RG = 22 W; non-repetitive 10 µs
RBSOA reverse bias safe operating area VCE = 1200 V; VGE = ±15 V; TVJ = 125°C
RG = 22 W; L = 100 µH; clamped inductive load 100 A
RthJC thermal resistance junction to case 0.33 K/W
RthCH thermal resistance case to heatsink 0.33 K/W
Fast Recovery Diode
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 150°C 1200 V
IFAV average forward current rect.; d = 0.5 TC = 80°C 27 A
IFRMS rms forward current rect.; d = 0.5 TC = 80°C 38 A
IFSM max. surge forward current t = 10 ms TVJ = 45°C 200 A
Ptot total power dissipation TC = 25°C 130 W
VF0
rF
threshold voltage
slope resistance TVJ = 150°C
for power loss calculation only 1.3
16 V
mW
VFforward voltage IF = 30 A TVJ = 25°C 2.76 V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C 1 0.25 mA
mA
IRM reverse recovery current IF = 50 A; VR = 100 V; diF /dt = -100 A/µs 5.5 11 A
trr reverse recovery time IF = 1 A; VR = 30 V; diF /dt = -200 A/µs 40 ns
RthJC thermal resistance junction to case 0.9 K/W
RthCH thermal resistance case to heatsink 0.1 K/W
TC = 25°C unless otherwise stated
p h a s e - o u t
© 2010 IXYS All rights reserved 3 - 6
20101007a
VUB 116-16NO1
IXYS reserves the right to change limits, test conditions and dimensions.
Temperature Sensor NTC Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/85
resistance TC = 25°C 4.75 5.0
3375 5.25 kW
K
Module Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz; t = 1 min.
t = 1 s 2500
3000 V~
V~
Mdmounting torque (M5) 2.7 3.3 Nm
dS
dA
a
creep distance on surface
strike distance through air
maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
Rpin-chip thermal resistance pin to chip TVJ = 25°C 2 mW
Weight 180 g
TC = 25°C unless otherwise stated
Rectifier Diode
Symbol Conditions Ratings
min. typ. max.
VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 150°C 0.1
2mA
mA
VFforward voltage IF = 80 A TVJ = 25°C 1.43 V
ID(AV)M max. average DC output current rectangular; d = 1/3; bridge TC = 80°C 116 A
VF0
rF
threshold voltage
slope resistance TVJ = 150°C
for power loss calculation only 0.85
7.1 V
mW
RthJC thermal resistance junction to case per diode TVJ = 25°C 0.65 K/W
RthCH thermal resistance case to heatsink TVJ = 25°C 0.1 K/W
Ptot total power dissipation TVJ = 25°C 190 W
IFSM max. forward surge current t = 10 ms (50Hz) TVJ = 45°C
VR = 0 V TVJ = 150°C 700
610 A
A
I2tvalue for fusing t = 10 ms (50Hz) TVJ = 45°C
VR = 0 V TVJ = 150°C 2450
1860 A2s
A2s
p h a s e - o u t
© 2010 IXYS All rights reserved 4 - 6
20101007a
VUB 116-16NO1
IXYS reserves the right to change limits, test conditions and dimensions.
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard VUB 116-16NO1 VUB116-16NO1 Box 6 496855
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Marking
p h a s e - o u t
© 2010 IXYS All rights reserved 5 - 6
20101007a
VUB 116-16NO1
IXYS reserves the right to change limits, test conditions and dimensions.
0.001 0.01 0.1 1
0
100
200
300
400
2 3 4 5 6 7 8 91
10
3
10
4
0 20 40 60 80 100
0
100
200
300
400
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1
0.01
0.1
1
I
2
t
[A
2
s]
I
FSM
[A]
t [s]
P
tot
[W]
I
dAVM
[A] T
amb
[°C]
t [s]
0 20 40 60 80 100 120 140
0
20
40
60
80
100
120
140
160
I
dAV
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.0 0.5 1.0 1.5 2.0
0
30
60
90
120
150
I
F
[A]
V
F
[V]
T
VJ
= 45°C
T
VJ
= 150°C T
VJ
= 45°C
R
thA
:
0.1 K/W
0.3 K/W
0.6 K/W
1.0 K/W
1.5 K/W
2.5 K/W
T
VJ
= 125°C
T
VJ
= 25°C
Fig. 1 Forward current vs. voltage
drop per diode Fig. 2 Surge overload current t [ms]
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sine 180°
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
R
i
τ
i
0.085 0.012
0.041 0.007
0.309 0.036
0.215 0.102
p h a s e - o u t
© 2010 IXYS All rights reserved 6 - 6
20101007a
VUB 116-16NO1
IXYS reserves the right to change limits, test conditions and dimensions.
0 1 2 3 4 5
0
20
40
60
80
100
120
IC
[A]
Eoff
td(off)
tf
t
[ns] Eoff
tf
10-5 10-4 10-3 10-2 10-1 100101
10-4
10-3
10-2
10-1
100
101
0 25 50 75 100 125 150
100
1000
10000
VGE = 15 V
IGBT
diode
single pulse
TVJ = 25°C
TVJ = 125°C
0 100 200 300 400 500
0
5
10
15
20
VCE = 600 V
IC = 50 A
td(off)
0 1 2 3
0
10
20
30
40
50
60
70
TVJ = 25°C
TVJ = 100°C
150°C
IF
[A]
VGE
[V]
VCE [V] VF [V] QG [nC]
IC [A] RG [Ω]
Eoff
[mJ]
20 40 60 80 100
0
2
4
6
8
0
200
400
600
800
Eoff
[mJ]
0 20 40 60 80 100 120
0
2
4
6
8
10
12
0
200
400
600
800
1000
1200
VCE = 600 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
t
[ns]
ZthJC
[K/W]
VCE = 600 V
VGE = ±15 V
RG = 22 Ω
TVJ = 125°C
t [s]
R
[Ω]
T [°C]
Fig. 7 Typ. output characteristics Fig. 8 Typ. forward characteristics
of free wheeling diode Fig. 9 Typ. turn on gate charge
Fig. 10 Typ. turn off energy and switching
times versus collector current Fig. 11 Typ. turn off energy and switching
times versus gate resistor
Fig. 12 Typ. transient thermal impedance Fig. 13 Typ. thermistor resistance vs. temperature
p h a s e - o u t
