MJ1001 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 

 

. . . for use as output devices in complementary general purpose amplifier applica-

tions.

•High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc

•Monolithic Construction with Built–in Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

MJ1000

ÎÎÎÎÎÎ

MJ1001

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

0.1

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

0.515

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎ

–55 to +200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎÎÎ

1.94

ÎÎÎÎ

C/W

Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈

4.0 k

≈

PNP

MJ900

MJ901

BASE

EMITTER

COLLECTOR

≈

4.0 k

≈

NPN

MJ1000

MJ1001

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ1000/D

 Motorola, Inc. 1995





10 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60–80 VOLTS

90 WATTS



*Motorola Preferred Device



CASE 1–07

TO–204AA

(TO–3)

REV 7

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) MJ1000

MJ1001

ÎÎÎÎ

V(BR)CEO

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Leakage Current

(VCB = 60 Vdc, RBE = 1.0k ohm) MJ1000

(VCB = 80 Vdc, RBE = 1.0k ohm) MJ1001

(VCB = 60 Vdc, RBE = 1.0k ohm, TC = 150

C) MJ1000

(VCB = 80 Vdc, RBE = 1.0k ohm, TC = 150

C) MJ1001

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

1.0

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0) MJ1000

(VCE = 40 Vdc, IB = 0) MJ1001

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain(1) (IC = 3.0 Adc, VCE = 3.0 Vdc)

(IC = 4.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

750

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Saturation Voltage(1) (IC = 30 Adc, IB = 12 mAdc)

(IC = 8.0 Adc, IB = 40 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Emitter Voltage(1) (IC = 3.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

(1)Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

IC, COLLECTOR CURRENT (AMPS)

1.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0 10

5.0

1.0

0.7

0.5

3.5

IC, COLLECTOR CURRENT (AMP)

3.0

2.5

2.0

1.5

1.0

0.5

0.3

50,000

0.01

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10

10,000

5000

2000

Figure 3. Small–Signal Current Gain

f, FREQUENCY (Hz)

1000

20,000

hFE, DC CURRENT GAIN

1000

500

200

TJ = 200

Figure 4. “On” Voltages

500.01 0.02 0.05 0.5 1.0 102.0 5.00.2

Figure 5. DC Safe Operating Area

3000

2000

500

TC = 25

TJ = 25

TJ = 150

hfe, SMALL–SIGNAL CURRENT GAIN

100

VBE(sat) @ IC/IB = 250 SECONDARY BREAKDOWN

LIMITATION

THERMAL LIMITATION @ TC = 25

BONDING WIRE LIMITATION

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

300

200

100

VCE = 3.0 Vdc

IC = 3.0 Adc

MJ1000

0.1 7.0 20 10030 705.03.0

3.0

2.0

0.2

0.1

7.0

–55

CVCE = 3.0 V

103106

105

104

MJ1001

There we two limitations on the power handling ability of a

transistor: average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE lim-

its of the transistor that must be observed for reliable opera-

tion; e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by secondary breakdown.

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

 

4 Motorola Bipolar Power Transistor Device Data

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MJ1000/D

*MJ1000/D*

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