CQ202-4BS-2
CQ202-4DS-2
CQ202-4MS-2
CQ202-4NS-2
4.0 AMP TRIAC
200 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ202-4BS-2
series type is an epoxy molded silicon triac designed
for full wave AC control applications featuring gate
triggering in all four (4) quadrants.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
CQ202 CQ202 CQ202 CQ202
SYMBOL -4BS-2 -4DS-2 -4MS-2 -4NS-2 UNITS
Peak Repetitive Off-State Voltage VDRM 200 400 600 800 V
RMS On-State Current (TC=80°C) IT(RMS) 4.0 A
Peak Non-Repetitive Surge Current (t=8.3ms) ITSM
40 A
Peak Non-Repetitive Surge Current (t=10ms) ITSM
35 A
I2t Value for Fusing (t=10ms) I2t 6.0 A2s
Peak Gate Power (tp=10s) PGM 3.0 W
Average Gate Power Dissipation PG(AV) 0.2 W
Peak Gate Current (tp=10s) IGM 1.2 A
Storage Temperature Tstg -40 to +150 °C
Junction Temperature TJ -40 to +125 °C
Thermal Resistance ΘJA 60 °C/W
Thermal Resistance ΘJC 7.5 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IDRM Rated VDRM, RGK=1.0KΩ 10 µA
IDRM Rated VDRM, RGK=1.0KΩ, TC=125°C 200 µA
IGT V
D=12V, QUAD I, II, III 2.5 5.0 mA
IGT V
D=12V, QUAD IV 5.4 9.0 mA
IH R
GK=1.0KΩ 1.6 5.0 mA
VGT V
D=12V, QUAD I, II, III 0.95 1.75 V
VTM I
TM=6.0A, tp=380s 1.25 1.75 V
dv/dt VD=⅔ VDRM, TC=125°C 11 V/µs
TO-202-2 CASE
R2 (23-April 2012)
www.centralsemi.com