SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103 Silicon Transistors The General Electric 2N4409 and 2N4410 are Silicon NPN Planar Epitaxial Passivated Transistors designed for high voltage amplifier applications and for Neon Display Tube Drivers. absolute maximum ratings*( Ta = 25C unless otherwise specified) (EMITTER Voltages 2N4409 2N4410 2. BASE - 3. COLLECTOR Collector to Emitter Vero _30 80 Volts T0792 Collector to Base Vcso 80 120 Volts Emitter to Base VEBO 6 6 Volts Current 407[ 482{o16iois) 3 Collector Ic 250 250 mA Dissipation Total Power Ta < 25C Pr 625 625 mWatt Total Power Tc < 25C Pry 1.5 1.5 Watts Derating Factor Ty > 25C Pry 5 5 mwW/C Derating Factor Tc > 25C Py 12 12 mW/C : NOTES: Temperature 1. THREE LEADS RO UTSIDE Storage Tstg -55 to +150 C PeeTH SIDE. mee neon nee on : (THREE LEADS) b2 APPLIES BE L ; Operating , Ty 55 to +150 C . gb APPLIES BETWEEN Le AND 12.70'MM (.500") Lead (1/16" + 1/32 from Tr. +260 C FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED INL, AND BEYOND I2. 70MM (.500") case for 10 sec. max.) FROM SEATING PLANE. electrical characteristics:*(T, = 25C unless otherwise specified) 2N4409 2N4410 Static Character istics* SYMBOL MIN. MAX. MIN. MAX. UNITS Collector-Emitter Breakdown Voltage (Ic = 1 mA, Ip = 0) Vpr)cEO 50 _ 80 _ Volts Collector-Emitter Breakdown Voltage (Ic = 500 vA, VBE(o ff) = 5V, Rge =8.2K Ohms) V(BR)CER 80 _ 120 _ Volts Collector-Base Breakdown Voltage (Ic = 10 yA, Ip = 0) ViBr)cBO 80 - 120 _ Volts Emitter-Base Breakdown Voltage (le = 10uA, Ic = 0) V(BR)EBO 5 _ 5 - Volts Collector Cutoff Current (Vor = 60V, Ig = 0) IcBo _ 10 _ _ nA (Veg = 60V, Ip = 0, Ta = 100C) IcBo _ 1.0 _ uA (Veg = 100V, Ip = 0) IcgBo - - 10 nA (Vog = 100V, Ip = 0, Ta = 100C) Icpo _ _ _ 1.0 uA Emitter Cutoff Current (Var = 4V, Ic = 0) Igpo 100 100 nA Forward Current Transfer Ratio (Vcr = 1V, Ic = 1 mA) hee 60 _ 60 _ (Vcg = 1V, Ic = 10 mA) hrr 40 400 60 400 Collector-Emitter Saturation Voltage (ic = 1mA, Ip = 0.1 mA) VcE(sat) _ 0.2 _ 0.2 Volts Base-Emitter Saturation Voltage (Ic =] mA, Ip = 0.1 mA) VBE(sat) _ 0.8 _ 0.8 Volts Base-Emitter Voltage (Ic = 1mA, VcE = 5V) VBE(on) _ 0.8 _ 0.8 Volts 421 2N4409 2N4410 Static Characteristics (continued) Dynamic Characteristics Current-Gain Bandwidth Product (Ic = 10mA, Veg = 10V, f = 30 MHz) Collector-Base Capacitance (Veg = 10V, Ip = 0, f = 140 kHz) Emitter-Base Capacitance (Vgr = 0.5V, Ic = 0, f = 140 kHz) *Indicates JEDEC Registered Data. SYMBOL *fy Cob 422 2N4409 2N4410 MIN. MAX. MIN. MAX, 60 300 60 300 _ 12 12 _ 50 50 UNITS MHz pF pF