7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N6303 APPLICATIONS: * * * High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: * * * * Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min) DC Current Gain: h FE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 ABSOLUTE MAXIMUM RATINGS: RATINGS: SYMBOL VCEO* VCB* VEB* IC* IC* IB* TSTG* TJ* PD* PD* * JC CHARACTERISTIC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25 C Derate above 25 C Total Device Dissipation TA = 25 C Derate above 25 C Thermal Resistance Junction to Case Junction to Ambient Indicates JEDEC registered data. MSC1062.PDF 05-25-99 VALUE UNITS - 80 - 80 - 4.0 10 3.0 0.5 -65 to 200 -65 to 200 6.0 Vdc Vdc Vdc Adc Adc Adc C C Watts 34.3 mW/ C 1.0 Watts 5.71 mW/ C 29 175 C/W C/W 2N6303 ELECTRICAL CHARACTERISTICS: (25 Case Temperature Unless Otherwise Noted) SYMBOL CHARACTERISTIC VCEO(sus)* Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current IC = 20 mAdc, IB = 0 (Note 1) VALUE Min. Max. ---- 80 IC = 100 Adc, IE = 0 - 80 ---- Vdc IE = 100 Adc, IC = 0 - 4.0 ---- Vdc VCE = - 80V, VBE(off) = 2.0 Vdc ---- 1.0 Adc VCB = - 80V, IE = 0, TC = 150 C ---- 150 Adc DC Current Gain (Note 1) IC = 500 mAdc, VCE = - 1.0 Vdc IC = 1.5 Adc, VCE = - 2.0 Vdc IC = 2.5 Adc, VCE = - 3.0 Vdc IC = 3.0 Adc, VCE = - 5.0 Vdc 35 ---- ---- 30 150 ---- 20 20 ------- ------- IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc ------- Vdc Vdc IC = 2.5 Adc, IB = 250 mAdc ---- IC = 500 mAdc, IB = 50 mAdc IC = 1.5 Adc, IB = 150 mAdc ---- BVCBO* BVEBO* ICEX* ICBO* hFE* VCE(sat)* TEST CONDITIONS Units Vdc IC = 2.5 Adc, IB = 250 mAdc ---- - 0.5 - 0.75 - 1.3 - 1.0 - 1.4 - 2.0 Current Gain Bandwidth Product (Note 2) IC = 100 mAdc, VCE = - 5.0 Vdc, ftest = 20 MHz 60 ---- MHz Cob* Output Capacitance VCB = - 10 Vdc, IE = 0, f = 0.1 MHz ---- 120 pF Cib* Input Capacitance VEB = - 3.0 Vdc, IC = 0, f = 0.1 MHz ---- 1000 pF ---- 35 ns ---- 65 ns ---- 325 ns ---- 75 ns VBE(sat)* fT* td* Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) ts* Storage Time VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc, IB1 = 150 mAdc VCC = - 30 Vdc, VBE(off) = 0, IC =1.5 Adc, IB1 = 150 mAdc VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc tf* Fall Time VCC = - 30 Vdc, IC = 1.5 Adc, IB1 = IB2 =150 mAdc tr* Delay Time Rise Time Note 1: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Note 2: fT = |hfe| * ftest * Indicates JEDEC registered data. MSC1062.PDF 05-25-99 - 0.9 Vdc Vdc Vdc Vdc 2N6303 PACKAGE MECHANICAL DATA: 1.500 [38.10] MIN .031 [.787] .240 [6.09] .260 [6.60] . 029 [.736] .045 [1.14] 45 .010 [.254] .030 [.762] .200 [5.08] O.305 [7.75] O.335 [8.51] .100 [2.54] [+.051] O.017 +.002 -.001 [.432] [.025] .100 [2.54] O.335 [8.51] O.370 [9.40] NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC1062.PDF 05-25-99