MOC3081SM - ON SEMICONDUCTOR

September, 2019 − Rev. 1 1Publication Order Number:

MOC3083M/D

6-Pin DIP Zero-Cross Triac

Driver Optocoupler

(800 V Peak)

MOC3081M, MOC3082M,

MOC3083M

Description

The MOC3081M, MOC3082M and MOC3083M devices consist of

a GaAs infrared emitting diode optically coupled to a monolithic

silicon detector performing the function of a zero voltage crossing

bilateral triac driver.

They are designed for use with a discrete power triac in the interface

of logic systems to equipment powered from 240 VAC lines, such as

solid−state relays, industrial controls, motors, solenoids and consumer

appliances, etc.

Features

•Simplifies Logic Control of 240 VAC Power

•Zero Voltage Crossing to Minimize Conducted and Radiated Line

Noise

•800 V Peak Blocking Voltage

•Superior Static dv/dt

♦1500 V/ms Typical, 600 V/ms Guaranteed

•Safety and Regulatory Approvals

♦UL1577, 4,170 VACRMS for 1 Minute

♦DIN EN/IEC60747−5−5

•These are Pb−Free Devices

Applications

•Solenoid/Valve Controls

•Lighting Controls

•Static Power Switches

•AC Motor Starters

•Temperature Controls

•E.M. Contactors

•AC Motor Drives

•Solid State Relays

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PDIP6 8.51x6.35, 2.54P

CASE 646BZ

See detailed ordering and shipping information on page 9 o

this data sheet.

ORDERING INFORMATION

PDIP6 8.51x6.35, 2.54P

CASE 646BY

PDIP6 8.51x6.35, 2.54P

CASE 646BX

Figure 1. Schematic

MAIN TERM

NC*

N/C

*DO NOT CONNECT

(TRIAC SUBSTRATE)

ANODE

CATHODE

CIRCUIT

MAIN TERM

CROSSING

ZERO

MOC3081M, MOC3082M, MOC3083M

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SAFETY AND INSULATION RATINGS

As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with

the safety ratings shall be ensured by means of protective circuits.

Parameter Characteristics

Installation Classifications per DIN VDE 0110/1.89 Table 1, For

Rated Mains Voltage

< 150 VRMS I–IV

< 300 VRMS I–IV

Climatic Classification 40/85/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test

with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak

Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test

with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak

VIORM Maximum Working Insulation Voltage 850 Vpeak

VIOTM Highest Allowable Over−Voltage 6000 Vpeak

External Creepage ≥ 7mm

External Clearance ≥ 7mm

External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm

DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm

RIO Insulation Resistance at TS, VIO = 500 V > 109W

MOC3081M, MOC3082M, MOC3083M

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ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Symbol Parameters Value Unit

Total Device

TSTG Storage Temperature −40 to 150 °C

TOPR Operating Temperature −40 to 85 °C

TJJunction Temperature Range −40 to 100 °C

TSOL Lead Solder Temperature 260 for 10 seconds °C

PDTotal Device Power Dissipation at 25°C Ambient 250 mW

Derate Above 25°C 2.94 mW/°C

Emitter

IFContinuous Forward Current 60 mA

VRReverse Voltage 6 V

PDTotal Power Dissipation at 25°C Ambient 120 mW

Derate Above 25°C 1.41 mW/°C

Detector

VDRM Off−State Output Terminal Voltage 800 V

ITSM Peak Non−Repetitive Surge Current

(Single Cycle 60 Hz Sine Wave) 1 A

PDTotal Power Dissipation at 25°C Ambient 150 mW

Derate Above 25°C 1.76 mW/°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

MOC3081M, MOC3082M, MOC3083M

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ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified

INDIVIDUAL COMPONENT CHARACTERISTICS

Symbol Parameters Test Conditions Min. Typ. Max. Unit

Emitter

VFInput Forward Voltage IF = 30 mA 1.3 1.5 V

IRReverse Leakage Current VR = 6 V 0.005 100 mA

Detector

IDRM1 Peak Blocking Current, Either Direction VDRM = 800 V, IF = 0(1) 10 500 nA

dv/dt Critical Rate of Rise of Off−State Voltage IF = 0 (Figure 10) (2) 600 1500 V/ms

1. Test voltage must be applied within dv/dt rating.

2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load−driving thyristor(s) only.

TRANSFER CHARACTERISTICS

Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit

IFT LED Trigger Current (Rated IFT)Main Terminal

Voltage = 3 V(3) MOC3081M 15 mA

MOC3082M 10

MOC3083M 5

VTM Peak On−State Voltage,

Either Direction ITM = 100 mA peak,

IF = rated IFT All 1.8 3.0 V

IHHolding Current, Either Direction All 500 mA

3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating I F lies between max IFT

(15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute maximum IF (60 mA).

ZERO CROSSING CHARACTERISTICS

Symbol Parameters Test Conditions Min. Typ. Max. Unit

VINH Inhibit Voltage (MT1−MT2 voltage above which

device will not trigger) IF = Rated IFT 12 20 V

IDRM2 Leakage in Inhibited State IF = Rated IFT, VDRM = 800 V,

off−state 2 mA

ISOLATION CHARACTERISTICS

Symbol Parameters Test Conditions Min. Typ. Max. Unit

VISO Isolation Voltage (4) f = 60 Hz, t = 1 Minute 4170 VACRMS

RISO Isolation Resistance VI−O = 500 VDC 1011 W

CISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF

4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are

common.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

MOC3081M, MOC3082M, MOC3083M

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TYPICAL PERFORMANCE CUR VES

Figure 2. LED Forward Voltage vs. Forward

Current

IF, LED FORWARD CURRENT (mA)

0.1 1 10 100

VF, FORWARD VOLTAGE (V)

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

TA = −40_C

TA = 25_C

TA = 85_C

Figure 3. Trigger Current vs. Temperature

TA, AMBIENT TEMPERATURE (_C)

−40 −20 0 20 40 60 80 100

IFT, NORMALIZED

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

VTM A = 25_C

= 3 V

NORMALIZED TO T

Figure 4. LED Current Required to Trigger vs. LED

Pulse Width

PWIN, LED TRIGGER PULSE WIDTH (ms)

1 100

IFT, LED TRIGGER CURRENT (NORMALIZED)

IN >> 100 ms

NORMALIZED TO PW

TA = 25_C

Figure 5. Leakage Current, IDRM vs. Temperature

TA, AMBIENT TEMPERATURE (_C)

−40 −20 0 20 40 60 80 100

IDRM, LEAKAGE CURRENT (nA)

0.1

100

1000

10000

MOC3081M, MOC3082M, MOC3083M

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TYPICAL PERFORMANCE CURVES (Continued)

Figure 6. IDRM2, Leakage in Inhibit State vs.

Temperature

TA, AMBIENT TEMPERATURE (_C)

−40 −20 0 20 40 60 80 100

IDRM2, NORMALIZED

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4 IF = RATED IFT

NORMALIZED TO TA = 25_C

Figure 7. On−State Characteristics

VTM, ON−STATE VOLTAGE (VOLTS)

−4 −3 −2 −1 0 1 2 3 4

ITM, ON−STATE CURRENT (mA)

TA = 25_C

−800

−600

−400

−200

200

400

600

800

Figure 8. IH, Holding Current vs. Temperature

TA, AMBIENT TEMPERATURE (_C)

−40 −20 0 20 40 60 80 100

IH, HOLDING CURRENT (NORMALIZED)

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

Figure 9. Inhibit Voltage vs. Temperature

TA, AMBIENT TEMPERATURE (_C)

−40 −20 0 20 40 60 80 100

VINH, NORMALIZED

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

NORMALIZED TO TA = 25_C

MOC3081M, MOC3082M, MOC3083M

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Figure 10. Static dv/dt Test Circuit

3. The worst−case condition for static dv/dt is established

by triggering the D.U.T. with a normal LED input current,

then removing the current. The variable RTEST allows

the dv/dt to be gradually increased until the D.U.T.

continues to trigger in response to the applied voltage

pulse, even after the LED current has been removed.

The dv/dt is then decreased until the D.U.T. stops

triggering. RC is measured at this point and recorded.

1. The mercury wetted relay provides a high speed

repeated pulse to the D.U.T.

2. 100x scope probes are used, to allow high speeds and

voltages.

Vdc

800 V

10 kW

CTEST

PROBE

PULSE

INPUT MERCURY

WETTED

RELAY

RTEST

D.U.T.D.U.T.

Figure 11. Static dv/dt Test Waveform

504 V

0 VOLTS

APPLIED VOLTAGE

WAVEFORM

Vmax = 800 V

dv/dt = 0.63 Vmax = 504

tRC

tRC tRC

Typical circuit for use when hot line switching is required.

In this circuit the “hot” side of the line is switched and the

load connected to the cold or neutral side. The load may be

connected to either the neutral or hot line.

RIN is calculated so that IF is equal to the rated IFT of the

part, 15 mA for the MOC3081M, 10 mA for the

MOC3082M, and 5 mA for the MOC3083M. The 39 W

resistor and 0.01 mF capacitor are for snubbing of the triac

and may or may not be necessary depending upon the

particular triac and load use.

Figure 12. Hot−Line Switching Application Circuit

0.01

VCC

Rin 1

4240 VAC

HOT

FKPF12N80

NEUTRAL

360 W

* For highly inductive loads (power factor < 0.5), change this value to 360 W.

330 W

MOC3081M

MOC3082M

MOC3083M 39*

LOAD

Figure 13. Inverse−Parallel SCR Driver Circuit

VCC

Rin

240 VAC

SCR

360 W

R1 D1

SCR

MOC3081M

MOC3082M

MOC3083M

R2 D2

LOAD

Suggested method of firing two, back−to−back SCR’s

with an ON Semiconductor triac driver. Diodes can be

1N4001; resistors, R1 and R2, are optional 330 W.

NOTE: This optoisolator should not be used to drive a

load directly. It is intended to be a trigger device

only.

MOC3081M, MOC3082M, MOC3083M

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Reflow Profile

Figure 14. Reflow Profile

Time (seconds)

Temperature

Time 25°C to Peak

260

240

220

200

180

160

140

120

100

Tsmax

Tsmin

120

Preheat Area

240 360

( C)5

Max. Ramp−up Rate = 3°C/s

Max. Ramp−down Rate = 6°C/s

Profile Freature Pb−Free Assembly Profile

Temperature Minimum (Tsmin) 150°C

Temperature Maximum (Tsmax) 200°C

Time (tS) from (Tsmin to Tsmax) 60 seconds to 120 seconds

Ramp−up Rate (TL to TP) 3°C/second maximum

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL)60 seconds to 150 seconds

Peak Body Package Temperature 260°C +0°C / –5°C

Time (tP) within 5°C of 260°C30 seconds

Ramp−down Rate (TP to TL) 6°C/second maximum

T ime 25 °C to Peak Temperature 8 minutes maximum

MOC3081M, MOC3082M, MOC3083M

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ORDERING INFORMATION

Part Number Package Shipping

MOC3081M DIP 6−Pin 50 Units / Tube

MOC3081SM SMT 6−Pin (Lead Bend) 50 Units / Tube

MOC3081SR2M SMT 6−Pin (Lead Bend) 1000 Units / Tape & Reel

MOC3081VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube

MOC3081SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 50 Units / Tube

MOC3081SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 Units / Tape & Reel

MOC3081TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube

NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M,

MOC3021M, MOC3022M, and MOC3083M product families.

MARKING INFORMATION

Figure 15. Top Mark

MOC3081

43 5

V X YY Q

Top Mark Definitions

1ON Semiconductor Logo

2Device Number

3DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option)

4One−Digit Year Code, e.g., ‘5’

5Two−Digit Work Week, Ranging from ‘01’ to ‘53’

6Assembly Package Code

PDIP6 8.51x6.35, 2.54P

CASE 646BX

ISSUE O

DATE 31 JUL 2016

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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DOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1

PDIP6 8.51X6.35, 2.54P

PDIP6 8.51x6.35, 2.54P

CASE 646BY

ISSUE A

DATE 15 JUL 2019

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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PAGE 1 OF 1

PDIP6 8.51x6.35, 2.54P

CASE 646BZ

ISSUE O

DATE 31 JUL 2016

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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DOCUMENT NUMBER:

DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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PDIP6 8.51X6.35, 2.54P

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