BAS70-04LT1-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2003

February, 2003 - Rev. 5 1Publication Order Number:

BAS70-04LT1/D

BAS70−04LT1

Preferred Device

Dual Series

Schottky Barrier Diode

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

•Extremely Fast Switching Speed

•Low Forward Voltage

MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)

Rating Symbol Value Unit

Reverse Voltage VR70 Volts

Forward Current IF70 mA

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

PF225

1.8 mW

mW/°C

Operating Junction and Storage

Temperature Range TJ, Tstg -55 to

+150 °C

70 VOLTS

SCHOTTKY BARRIER DIODE

Device Package Shipping

ORDERING INFORMATION

BAS70-04LT1 SOT-23 3000 / Tape & Reel

PLASTIC

SOT-23 (TO-236AB)

CASE 318

Preferred devices are recommended choices for future use

and best overall value.

ANODE

CATHODE

CATHODE/ANODE

CG M

MARKING DIAGRAM

CG = Specific Device Code

M = Date Code

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BAS70-04LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 70 — Volts

Total Capacitance (VR = 0 V, f = 1.0 MHz) CT— 2.0 pF

Reverse Leakage (VR = 50 V)

(VR = 70 V) IR—

—0.1

10 µAdc

Forward Voltage (IF = 1.0 mAdc) VF— 410 mVdc

Forward Voltage (IF = 10 mAdc) VF— 750 mVdc

Forward Voltage (IF = 15 mAdc) VF— 1.0 Vdc

100

0 0.1

VF, FORWARD VOLTAGE (VOLTS)

0.2 0.3 0.4 0.5

1.0

0.1

85°C

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

5.0 10 15 20 50

1.4

VR, REVERSE VOLTAGE (VOLTS)

1.2

0.4

0.2

CT, CAPACITANCE (pF)

5.0 10 15 50

IF, FORWARD CURRENT (mA)

Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse

Voltage

Figure 3. Typical Capacitance

−40 °C

25°C

TA = 150°C

25°C

IR, REVERSE CURRENT (µA)

1.0

−55 °C

125 °C

150°C

100

0.6

0.8

1.0

0.6 0.7

125°C

85°C

30 35 40 45

25 30 35 40 45

0.8 0.9

BAS70-04LT1

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The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature TA of 25°C,

one can calculate the power dissipation of the device which

in this case is 225 milliwatts.

INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT-23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT-23 POWER DISSIPATION

PD = TJ(max) - TA

RθJA

PD = 150°C - 25°C

556°C/W = 225 milliwatts

The power dissipation of the SOT-23 is a function of th e

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipa-

tion. Power dissipation for a surface mount device is deter-

mined b y T J(max), the maximum rated junction temperature

of the die, RθJA, the thermal resistance from the device

junction to ambient, and the operating temperature, TA.

Using the values provided on the data sheet for the SOT-23

package, PD can be calculated as follows:

The 556°C/W for the SOT-23 package assumes the use

of the recommended footprint on a glass epoxy printed

circuit board to achieve a power dissipation of 225 milli-

watts. There are other alternatives to achieving higher

power dissipation from the SOT-23 package. Another

alternative would be to use a ceramic substrate or an

aluminum core board such as Thermal Clad. Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the

rated temperature of the device. When the entire device is

heated to a high temperature, failure to complete soldering

within a short time could result in device failure. There-

fore, the following items should always be observed in

order to minimize the thermal stress to which the devices

are subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference shall be a maximum of 10°C.

•The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

BAS70-04LT1

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PACKAGE DIMENSIONS

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0350 0.0440 0.89 1.11

D0.0150 0.0200 0.37 0.50

G0.0701 0.0807 1.78 2.04

H0.0005 0.0040 0.013 0.100

J0.0034 0.0070 0.085 0.177

K0.0140 0.0285 0.35 0.69

L0.0350 0.0401 0.89 1.02

S0.0830 0.1039 2.10 2.64

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD

318−08.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOT-23 (TO-236AB)

PLASTIC PACKAGE

CASE 318-08

ISSUE AH

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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

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PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051

Phone: 81-3-5773-3850

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

BAS70-04LT1/D

Thermal Clad is a trademark of the Bergquist Company.

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