© 2008 IXYS All rights reserved 1 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20080811a
IdAV = 63/88 A
VRRM = 800-1800 V
VRRM VRSM Type
VV
800 900 VUO 62-08NO7 VUO 82-08NO7
1200 1300 VUO 62-12NO7 VUO 82-12NO7
1400 1500 VUO 62-14NO7 VUO 82-14NO7
1600 1700 VUO 62-16NO7 VUO 82-16NO7
1800 1900 VUO 62-18NO7* VUO 82-18NO7*
Symbol Conditions Maximum Ratings
VUO 62 VUO 82
IdAV TC = 110°C; module 63 88 A
IdAV TA = 45°C (RthCA = 0.6 K/W); module 48 57 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz); sine 550 750 A
VR = 0 V; t = 8.3 ms (60 Hz); sine 600 820 A
TVJ = TVJM; t = 10 ms (50 Hz); sine 500 670 A
VR = 0 V; t = 8.3 ms (60 Hz); sine 550 740 A
I2tTVJ = 45°C; t = 10 ms (50 Hz), sine 1520 2800 A2s
VR = 0 V; t = 8.3 ms (60 Hz), sine 1520 2800 A2s
TVJ = TVJM; t = 10 ms (50 Hz), sine 1250 2250 A2s
VR = 0 V; t = 8.3 ms (60 Hz), sine 1250 2250 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60Hz RMS; t = 1 min 2500 V~
IISOL ≤ 1 mA; t = 1 s 3000 V~
MdMounting torque (M5) 5 ±15% Nm
Terminal connection torque (M5) 5 ±15% Nm
Weight typ. 160 g
Features
•Package with screw terminals
•Isolation voltage 3000 V~
•Planar passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
•UL registered E72873
Applications
•Supplies for DC power equipment
•Input rectifiers for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power cycling
Dimensions in mm (1 mm = 0.0394")
21.6
5.3
5.3
13.3
42
23
48
2.5 2.5
18
20 20
72
60
54
~
~
~
+
10
M5x10
2.5
7
3
30
Symbol Conditions Characteristic Values
VUO 62 VUO 82
IRVR = VRRM;T
VJ = 25°C < 0.3 0.3 mA
VR = VRRM;T
VJ = TVJM < 5 5 mA
VFIF = 150 A; TVJ = 25°C < 1.8 1.6 V
VT0 For power-loss calculations only 0.8 0.8 V
rT85mΩ
RthJC per diode 1.45 1.1 K/W
per module 0.24 0.183 K/W
RthJH per diode 1.87 1.52 K/W
per module 0.31 0.253 K/W
dSCreeping distance on surface 10 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Three Phase
Rectifier Bridge
* delivery time on request
~
~
~
–
+
VUO 62
VUO 82
~~~
+-
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© 2008 IXYS All rights reserved 2 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20080811a
0.5 11.5 2
0
50
100
150
200
VF[V]
IF
[A]
T
vj
= 150°C
T
vj
= 25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TV J=4 5°C T VJ= 150° C
550 500
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
2
3
4
As
2
604020
0
25
50
75
100
125
150
175
200
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.76
1.26
0.76
0.51
0.380.26 = RTHCA [ K/ W ]
IFAVM [A] Tamb [K]
050100150
[W]
PVTOT
PSD 62
50 100 150 200
0
20
40
60
80 DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
0.01 0.1 110
0
.5
1
1
.5
2
2
.5
K/W
Zth
t[s]
ZthJK
ZthJC
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 3 ∫i2dt versus time (1-10ms)
per diode or thyristor
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current
at case temperature
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
VUO 62
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© 2008 IXYS All rights reserved 3 - 3
IXYS reserves the right to change limits, test conditions and dimensions. 20080811a
VUO 82
Fig.5 Maximum forward current at
case temperature
Fig. 4 Power dissipation versus direct output
current and ambient temperature
Fig. 3 ∫i
2
dt versus time (1-10ms)
per diode (or thyristor)
Fig. 2 Surge overload current per
diode I : Crest value
FSM
t: duration
Fig. 1 Forward current versus
voltage drop per diode
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
T = 150˚C
vj
T = 25˚C
vj
20.5 1.5
1
V [V]
F
0
I
F
50
100
200
150
[A]
0.01 0.1 110
0.5
1
1.5
2
K/W
Zth
t[s]
ZthJK
ZthJC
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