MII100-12A3
Phase leg
IGBT (NPT) Module
1
3
2
7
6
4
5
Part number
MII100-12A3
Backside: isolated
C25
CE(sat)
VV2.2
CES
135
1200
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● NPT IGBT technology
● low saturation voltage
● low switching losses
● switching frequency up to 30 kHz
● square RBSOA, no latch up
● high short circuit capability
● positive temperature coefficient for
easy parallelling
● MOS input, voltage controlled
● ultra fast free wheeling diodes
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Y4
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20131206aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MII100-12A3
-di /dt = A/µs
T = °C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collector current A
135
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
90
V
V
CE(sat)
total power dissipation 560 W
collector emitter leakage current
6.5 V
turn-on delay time 100 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitter voltage
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
150
±30
T = °C
T = °C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.7
2.7
5.54.5
mA
7.5 mA
5
300
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
350 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
50 ns
650 ns
50 ns
12.1 mJ
10.5 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEmax
1200
short circuit safe operating area
µs
SCSOA
10T = °C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
270 A
R
thJC
thermal resistance junction to case 0.22 K/W
V
RRM
V1200
max. repetitive reverse voltage T = 25°C
VJ
T = 25°C
forward current A
150
A
C
95T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.50
V
VJ
1.70T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
1
mA
VJ
1.5T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
7µC
62 A
200 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
FGE
E
rec
1.2 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case 0.45 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = °C
VJ
VJ
75
3
75
75
75
75
15
15
15
600
1200
600
600
I
CM
2.2
R
thCH
thermal resistance case to heatsink 0.22 K/W
R
thCH
thermal resistance case to heatsink 0.45 K/W
IGBT
Diode
600 V
V = V
CEmax
1200
80
80
80
80
125
125
125
125
125
nA
IXYS reserves the right to change limits, conditions and dimensions. 20131206aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MII100-12A3
Ratings
YYYYYYYYYYY
yywwA
Circuit Diagram
2D Matrix
Part No.
Assembly
Line
Date Code
Package
T
op
°C
M
D
Nm2.75
mounting torque 2.25
T
VJ
°C150
virtual junction temperature -40
Weight g110
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
M
T
Nm5.5
terminal torque 4.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
14.0 10.0
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 300 A
per terminal
125-40
terminal to terminal
Y
4
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MII100-12A3 466743Box 6MII100-12A3Standard
3600
ISOL
T
stg
°C125
storage temperature -40
3000
threshold voltage V
mΩ
V
0 max
R
0 max
slope resistance *
1.5
13.6
1.3
6.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
IGBT Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131206aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MII100-12A3
67 ±0.2
M5
Ø 6.5
2.8 x0.5
30 ±0.3
0.25 7.5
5
7.7
+0.3
- 0.1
29.5
+0.5
- 0.2
General tolerances:
DIN ISO 2768-T1-m
34 ±0.2
15 ±0.2
Ø 12
18.5 ±0.15
94 ±0.3
80 ±0.2
M5 x10
17 ±0.2
40 ±0.2
63 ±0.2
28 ±0.15
89
10 11
4567
123
1
3
2
7
6
4
5
Outlines Y4
IXYS reserves the right to change limits, conditions and dimensions. 20131206aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MII100-12A3
0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
25
50
75
100
125
150
175
0 100 200 300 400 500
0
5
10
15
20
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
25
50
75
100
125
150
175
567891011
0
25
50
75
100
125
150
13 V
15 V
9V
V
CE
[V]
I
C
[A]
11 V
T
VJ
=25°C
V
GE
=17 V
Fig. 1 Typ. output characteristics
13 V
15 V
9V
11 V
V
GE
=17 V
T
VJ
=125°C
V
CE
[V]
I
C
[A]
Fig. 2 Typ. output characteristics
V
CE
=20V
T
VJ
=25°C
V
GE
[V]
I
C
[A]
Fig. 3 Typ. transfer characteristics
Q
G
[nC]
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
0 50 100 150
0
10
20
30
40
0
30
60
90
120
E
on
t
d(on)
t
r
E
on
[mJ]
t
[ns]
I
C
[A]
0 50 100 150
0
5
10
15
20
0
200
400
600
800
E
off
[mJ]
I
C
[A]
t
[ns]
E
off
t
f
t
d(off)
Fig. 5 Typ. turn on energy & switching
times versus collector current
Fig.6 Typ. turn off energy & switching
times versus collector current
0 8 16 24 32 40 48 56
0
5
10
15
20
25
0
40
80
120
160
200
E
on
[mJ]
R
G
[]
E
on
t
d(on)
t
r
0 8 16 24 32 40 48 56
0
5
10
15
20
25
0
400
800
1200
1600
2000
E
off
[mJ]
R
G
[]
E
off
t
d(off)
t
[ns]
t
[ns]
Fig. 9 Typ. turn on energy & switching
times versus gate resistor
Fig. 9 Typ. turn off energy & switching
timesversusgateresistor
10
-4
10
-3
10
-2
10
-1
10
0
0.05
0.10
0.15
0.20
0.25
t[s]
Z
thJC
[K/W]
single pulse
Fig. 12 Typical transient
thermal impedance
V
CE
=600V
I
C
=75A
V
CE
=600V
V
GE
=±15V
R
G
=15
T
VJ
= 125°C
V
CE
=600V
V
GE
=±15V
R
G
= 15
T
VJ
=125°C
V
CE
= 600 V
V
GE
=±15V
I
C
=75A
T
VJ
=125°C
V
CE
=600V
V
GE
=±15V
I
C
=75A
T
VJ
= 125°C
t
f
IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20131206aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
MII100-12A3
0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
50
100
150
200
250
300
V
F
[V]
I
F
[A]
T
J
= 125°C
T
J
=25°C
Fig. 1 Typ. Forward current vs. V
F
10
-4
10
-3
10
-2
10
-1
10
0
0.1
0.2
0.3
0.4
0.5
t[s]
Z
thJC
[K/W]
single pulse
Fig. 2 Typ. transient thermal impedance junction to case
Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131206aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
