SKKT 27B12 E G6
© by SEMIKRON Rev. 0 – 19.01.2009 1
SEMIPACK® 1
SKKT
Thyristor Modules
SKKT 27B12 E G6
Features
• Heat transfer through aluminium oxide
ceramic isolated metal baseplate
• Hard soldered joints for high reliability
• UL recognized, file no. E63532
Typical Applications
• DC motor control (e. g. for machine
tools)
• AC motor soft starters
• Temperature control (e. g. for ovens,
chemical processes)
• Professional light dimming (studios,
theaters)
Absolute Maximum Ratings
Symbol Conditions Values Unit
Chip
IT(AV) sinus 180° Tc=85°C 28 A
Tc= 100 °C 21 A
ITSM 10 ms Tj=25°C 550 A
Tj= 130 °C 480 A
i2t10 ms Tj=25°C 1513 kA2s
i2tTj= 130 °C 1152 kA2s
VRSM 1300 V
VRRM 1200 V
VDRM 1200 V
(di/dt)cr Tj= 130 °C 140 A/µs
(dv/dt)cr Tj= 130 °C 1000 V/µs
Tj-40 ... 130 °C
Module
Tstg -40 ... 125 °C
Visol a.c.; 50 Hz; r.m.s. 1min 3000 V
1s 3600 V
Characteristics
Symbol Conditions min. typ. max. Unit
Chip
VTTj=25°C, I
T=75A 1.45 1.7 V
VT(TO) Tj= 130 °C 0.85 1 V
rTTj= 130 °C 8.50 10.00 mΩ
IDD;IRD Tj= 130 °C, VDD = VDRM; VRD = VRRM 20 mA
tgd Tj=25°C, I
G=1A, di
G/dt = 1 A/µs 1µs
tgr VD = 0.67 * VDRM 2µs
tqTj= 130 °C 150 µs
IHTj=25°C 150 250 mA
ILTj=25°C, R
G=33Ω300 600 mA
VGT Tj=25°C, d.c. 2.5 V
IGT Tj=25°C, d.c. 100 mA
VGD Tj= 130 °C, d.c. 0.25 V
IGD Tj= 130 °C, d.c. 4mA
Rth(j-c) cont. per chip 0.880 K/W
per module 0.440 K/W
Rth(j-c) sin. 180° per chip 0.930 K/W
per module 0.465 K/W
Rth(j-c) rec. 120° per chip 0.980 K/W
per module 0.490 K/W
Module
Rth(c-s) chip 0.22 K/W
module 0.11 K/W
Msto heatsink M5 4.25 5.75 Nm
Mtto terminals M5 2.55 3.45 Nm
a5 * 9,81 m/s2
w75g
SKKT 27B12 E G6
2 Rev. 0 – 19.01.2009 © by SEMIKRON
Fig. 1L: Max. power dissipation per chip vs. on-state
current
Fig. 1R: Max. power dissipation per chip vs. ambient
temperature
Fig. 2L: Max. power dissipation of one module vs. rms
current
Fig. 2R: Max. power dissipation of one module vs. case
temperature
Fig. 3L: Max. power dissipation of two modules vs. direct
current
Fig. 3R: Max. power dissipation of two modules vs. case
temperature
SKKT 27B12 E G6
© by SEMIKRON Rev. 0 – 19.01.2009 3
Fig. 4L: Max. power dissipation of three modules vs.
direct current
Fig. 4R: Max. power dissipation of three modules vs.
case temperature
Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time
SKKT 27B12 E G6
4 Rev. 0 – 19.01.2009 © by SEMIKRON
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
Fig. 9: Gate trigger characteristics
SKKT...B
SEMIPACK 1
