Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 11.7
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.4
IDM Pulsed Drain Current À46.8
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á87 mJ
IAR Avalanche Current À11.7 A
EAR Repetitive Avalanche Energy À2.5 mJ
dv/dt Peak Diode Recovery dv/dt Â3.4 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 0.42 (Typical) g
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
oC
A
04/27/06
www.irf.com 1
Product Summary
Part Number Radiation Level RDS(on) IDQPL Part Number
IRHE57034 100K Rads (Si) 0.08Ω 11.7A JANSR2N7495U5
IRHE53034 300K Rads (Si) 0.08Ω 11.7A JANSF2N7495U5
IRHE54034 500K Rads (Si) 0.08Ω 11.7A JANSG2N7495U5
IRHE58034 1000K Rads (Si) 0.1Ω 11.7A JANSH2N7495U5
For footnotes refer to the last page
Pre-Irradiation
LCC-18
Features:
nSingle Event Effect (SEE) Hardened
nUltra Low RDS(on)
nLow Total Gate Charge
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nCeramic Package
nLight Weight
RADIATION HARDENED JANSR2N7495U5
POWER MOSFET 60V, N-CHANNEL
SURFACE MOUNT (LCC-18) REF: MIL-PRF-19500/700
55
IRHE57034
TECHNOLOGY
PD - 94239E
IRHE57034, JANSR2N7495U5 Pre-Irradiation
2www.irf.com
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 11.7
ISM Pulse Source Current (Body Diode) À— — 46.8
VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 11.7A, VGS = 0V Ã
trr Reverse Recovery Time — — 125 ns Tj = 25°C, IF = 11.7A, di/dt ≤100A/µs
QRR Reverse Recovery Charge — — 420 nC VDD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.058 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.08 Ω VGS = 12V, ID = 7.4A
Resistance
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 7.0 — — S ( ) VDS > 15V, IDS = 7.4A Ã
IDSS Zero Gate Voltage Drain Current — — 10 VDS= 48V ,V GS=0V
— — 25 VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 45 VGS =12V, ID = 11.7A
Qgs Gate-to-Source Charge — — 15 nC VDS = 30V
Qgd Gate-to-Drain (‘Miller’) Charge — — 20
td(on) Turn-On Delay Time — — 25 VDD = 30V, ID = 11.7A,
trRise Time — — 100 VGS =12V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 35
tfFall Time — — 30
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 1250 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 520 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 16 —
nA
Ω
Ã
nH
ns
µA
Measured from the center of
drain pad to center of source pad
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 5.0
RthJ-PCB Junction-to-PC board — 19 — soldered to a copper-clad PC board
RthJA Junction-to-Ambient — 75 — °C/W
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Pre-Irradiation IRHE57034, JANSR2N7495U5
T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter Up to 500K Rads(Si)1 1000K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 60 — 60 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS= 48V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.034 — 0.043 Ω VGS = 12V, ID =7.4A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source à — 0.08 — 0.1 Ω VGS = 12V, ID =7.4A
On-State Resistance (LCC-18)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHE57064 (JANSR2N7495U5), IRHE53064 (JANSF2N7495U5) and IRHE54064 (JANSH2N7495U5)
2. Part number IRHE58064 (JANSH2N7495U5)
VSD Diode Forward Voltage à — 1.8 — 1.8 V VGS = 0V, IS = 11.7A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Fig a. Single Event Effect, Safe Operating Area
T able 2. Single Event Effect Safe Operating Area
I on LET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V
Br 37.3 285 36.8 60 60 60 60 40
Xe 63 300 29 46 46 35 25 15
Au 86.6 2068 106 35 35 27 20 14
0
10
20
30
40
50
60
70
-20-15-10-50
VGS
VDS
Br
Xe
Au
IRHE57034, JANSR2N7495U5 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
5.0 6.0 7.0 8.0 9.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-So u rce C u rre n t (A )
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
12A
11.7A
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Pre-Irradiation IRHE57034, JANSR2N7495U5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
600
1200
1800
2400
3000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
010 20 30 40 50
0
4
8
12
16
20
Q , To ta l Ga te Cha rge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
12A
V = 12V
DS
V = 30V
DS
V = 48V
DS
0.1
1
10
100
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
11.7A
1 10 100 1000
VDS , Drain-toS ource Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150° C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
IRHE57034, JANSR2N7495U5 Pre-Irradiation
6www.irf.com
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Du ty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rect angular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SIN GLE PU LSE
(TH ERMAL RESPON SE)
25 50 75 100 125 150
0
2
4
6
8
10
12
T , C ase Temperature ( C)
I , Drain Current (A)
°
C
D
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Pre-Irradiation IRHE57034, JANSR2N7495U5
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
VGS
25 50 75 100 125 150
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
5.2A
7.4A
11.7A
IRHE57034, JANSR2N7495U5 Pre-Irradiation
8www.irf.com
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 1.27mH
Peak IL = 11.7A, VGS = 12V
 ISD ≤ 11.7A, di/dt ≤ 220A/µs,
VDD ≤ 60V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
PAD ASSIGNMENTS
G = GATE
D = DRAIN
S = SOURCE
NC = NO CONNECTION
