RHRG75120 - Fairchild

RHRG75120

75A, 1200V Hyperfast Diode

The RHRG75120 is a hyperfast diode with soft recovery

characteristics (trr < 85ns). It has half the recovery time of

ultrafast diodes and is silicon nitride passivated

ion-implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping

diode and rectiﬁer in a variety of high frequency switching

power supplies and other power switching applications. Its

low stored charge and hyperfast soft recovery characteristic

minimize ringing and electrical noise in many power

switching circuits, thus reducing power loss in the switching

transistors.

Formerly developmental type TA49042.

Symbol

Features

• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <85ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

RHRG75120 TO-247 RHRG75120

NOTE: When ordering, use the entire part number.

CATHODE

ANODE

METAL)

(BOTTOM SIDE

Absolute Maximum Ratings TC = 25oC

RHRG75120 UNITS

Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1200 V

Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V

DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR1200 V

Average Rectiﬁed Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) 75 A

(TC = 42oC)

Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM 150 A

(Square Wave, 20kHz)

Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 500 A

(Halfwave, 1 Phase, 60Hz)

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD190 W

Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 50 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC

Data Sheet October 2008

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

SYMBOL TEST CONDITION MIN TYP MAX UNITS

VFIF = 75A - - 3.2 V

IF = 75A, TC = 150

οC - - 2.6 V

IRVR = 1200V - - 250

µA

VR = 1200V, TC = 150

οC- - 2mA

trr IF = 1A, dIF/dt = 100A/

µs- - 85ns

IF = 75A, dIF/dt = 100A/

µs - - 100 ns

taIF = 75A, dIF/dt = 100A/

µs - 60 - ns

tbIF = 75A, dIF/dt = 100A/

µs - 25 - ns

θJC - - 0.8 oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300

µs, D = 2%).

IR = Instantaneous reverse current.

trr = Reverse recovery time (See Figure 6), summation of ta + tb.

ta = Time to reach peak reverse current (See Figure 6).

tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).

θJC = Thermal resistance junction to case.

pw = Pulse width.

D = Duty cycle.

Typical Performance Curves

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE

400

100

10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

IF, FORWARD CURRENT (A)

VF, FORWARD VOLTAGE (V)

175oC

100oC

25oC

1000

100

0.1 0 200 400 600 800 1000 1200

VR, REVERSE VOLTAGE (V)

IR, REVERSE CURRENT (µA)

175oC

100oC

25oC

RHRG75120

FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE

Typical Performance Curves (Continued)

100

011080

IF, FORWARD CURRENT (A)

t, TIME (ns)

trr

TC = 25oC, dIF/dt = 100A/µs

25 50 75 100 125 150 175

SQ. WAVE

TC, CASE TEMPERATURE (oC)

IF(AV), AVERAGE FORWARD CURRENT (A)

Test Circuits and Waveforms

FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE

WAVEFORMS

VDD

IGBT

CURRENT

SENSE

DUT

VGE

VGE AMPLITUDE AND

t1 AND t2CONTROL IF

RG CONTROL dIF/dt

dIF

trr

tatb

IRM

0.25 IRM

DUT

CURRENT

SENSE

VDD

R < 0.1Ω

EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]

Q1= IGBT (BVCES > DUT VR(AVL))

VDD

IMAX = 1.6A

L = 40mH

t0t1t2

VAVL

RHRG75120

Rev. I37

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSWITCH™ *

™

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FlashWriter®*

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

PSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,

www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

RHRG75120