MURS120T3 Series Preferred Devices Surface Mount Ultrafast Power Rectifiers MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 http://onsemi.com Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150C) ULTRAFAST RECTIFIERS 1.0 AMPERE 50-600 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * * Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U1A, U1B, U1C, U1D, U1G, U1J MAXIMUM RATINGS SMB CASE 403A MARKING DIAGRAM U1x U1x= Device Code x = Specific Device Code = A, B, C, D, G or J Please See the Table on the Following Page ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 October, 2000 - Rev. 5 1 Publication Order Number: MURS120T3/D MURS120T3 Series MAXIMUM RATINGS MURS Symbol 105T3 110T3 115T3 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 Average Rectified Forward Current IF(AV) 1.0 @ TL = 155C 2.0 @ TL = 145C 1.0 @ TL = 150C 2.0 @ TL = 125C Amps Non-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 35 Amps Rating Operating Junction Temperature 120T3 140T3 160T3 Unit 200 400 600 Volts TJ 65 to +175 C RJL 13 C/W THERMAL CHARACTERISTICS Thermal Resistance, Junction to Lead (TL = 25C) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1.) (iF = 1.0 A, TJ = 25C) (iF = 1.0 A, TJ = 150C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V) tfr Volts 0.875 0.71 1.25 1.05 2.0 50 5.0 150 35 25 75 50 25 50 A ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping U1A SMB 2500 Units/Tape & Reel MURS110T3 U1B SMB 2500 Units/Tape & Reel MURS115T3 U1C SMB 2500 Units/Tape & Reel MURS120T3 U1D SMB 2500 Units/Tape & Reel MURS140T3 U1G SMB 2500 Units/Tape & Reel MURS160T3 U1J SMB 2500 Units/Tape & Reel MURS105T3 http://onsemi.com 2 ns MURS120T3 Series MURS105T3, MURS110T3, MURS115T3, MURS120T3 10 IR, REVERSE CURRENT ( A) 7.0 5.0 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 3.0 175C 100C 2.0 TC = 25C 1.0 0.7 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 TJ = 175C TJ = 100C 0.08 0.04 0.02 0.008 0.004 0.002 TJ = 25C 0 20 40 0.5 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* 0.3 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 0.2 50 0.1 45 0.07 NOTE: TYPICAL CAPACITANCE AT 0 V = 45 pF C, CAPACITANCE (pF) 40 0.05 0.03 0.02 35 30 25 20 15 10 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 5.0 1.3 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 RATED VOLTAGE APPLIED RJC = 13C/W TJ = 175C 9.0 8.0 7.0 6.0 5.0 4.0 dc 3.0 2.0 SQUARE WAVE 1.0 0 80 90 100 110 120 130 140 150 160 170 180 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Capacitance 5.0 TJ = 175C 4.0 5.0 I (CAPACITANCELOAD) PK 20 I 3.0 10 AV 2.0 dc SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 2.0 TC, CASE TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Case Figure 5. Power Dissipation http://onsemi.com 3 2.5 MURS120T3 Series MURS140T3, MURS160T3 7.0 175C 5.0 100C 3.0 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F IR, REVERSE CURRENT ( A) 10 TC = 25C 2.0 1.0 0.7 400 200 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.08 0.04 0.02 0.008 0.004 TJ = 175C TJ = 100C TJ = 25C 0 100 200 0.5 300 400 500 600 700 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Reverse Current* 0.3 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 0.2 25 0.1 0.07 NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF C, CAPACITANCE (pF) 20 0.05 0.03 0.02 15 10 5.0 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Forward Voltage 10 RATED VOLTAGE APPLIED RJC = 13C/W TJ = 175C 9.0 8.0 7.0 6.0 5.0 4.0 dc 3.0 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 160 180 200 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 8. Typical Capacitance 5.0 4.0 5.0 10 (CAPACITANCE LOAD) I PK 20 I SQUARE WAVE AV 3.0 dc TJ = 175C 2.0 1.0 0 0 0.5 1.0 1.5 2.0 TC, CASE TEMPERATURE (C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Current Derating, Case Figure 10. Power Dissipation http://onsemi.com 4 2.5 MURS120T3 Series PACKAGE DIMENSIONS SMB DO-214AA CASE 403A-03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J H http://onsemi.com 5 INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 MURS120T3 Series Notes http://onsemi.com 6 MURS120T3 Series Notes http://onsemi.com 7 MURS120T3 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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