SEMICONDUCTOR KTB772 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING A B D C E FEATURES *Complementary to KTD882. F G H K CHARACTERISTIC DIM A B C D E F G H J K L M N O P J MAXIMUM RATING (Ta=25) SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V DC IC -3 Pulse (Note) ICP -7 IB -0.6 Collector Current L M O N P 1 2 3 A Base Current (DC) Collector Power Ta=25 Dissipation Tc=25 1. EMITTER 2. COLLECTOR 3. BASE A MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX 1.5 PC W TO-126 10 Junction Temperature Storage Temperature Range Tj 150 Tstg -55150 Note : Pulse Width 10mS, Duty Cycle50%. ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -1 A Emitter-Cut-off Current IEBO VEB=-3V, IC=0 - - -1 A VCE=-2V, IC=-20mA 30 220 - hFE(2) (Note) VCE=-2V, IC=-1A 100 160 400 hFE(1) DC Current Gain * Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A - -0.3 -0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=-2V, IB=-0.2A - -1.0 -2.0 V VCE=-5V, IC=-0.1A - 80 - MHz VCB=-10V, IE=0, f=1MHz - 55 - pF Current Gain Bandwidth Product fT Cob Collector Output Capacitance * Pulse Test : Pulse Width350S, Duty Cycle2% Pulsed Note: hFE(2) Classification 2003. 7. 24 O:100200 , Y:160320 , GR:200400 Revision No : 4 1/3 KTB772 hFE - IC 1K -1.8 -1.6 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) IC - VCE IB =-10mA IB =-9mA IB =-8mA IB =-7mA IB =-6mA IB =-5mA -1.2 -1.0 IB =-4mA IB =-3mA -0.4 IB =-2mA IB =-1mA 0 0 -4 -8 -12 -16 500 300 VCE =-2V 100 50 30 10 5 3 1 -1 -20 -3 -10 -100 -50 -30 VCE (sat) -3 -10 -30 -100 -300 -1K 1K 500 300 I E =0 f=1MHz 100 50 30 10 5 3 -3K -3 -30 -10 -100 -300 -1K COLLECTOR-BASE VOLTAGE VCB (V) fT - IC SAFE OPERATING AREA -1 -3 Revision No : 4 -10 S 0 -0.3 S C -0.1 m OP E 5 -0.03 -1 -0.5 -0.3 -0.1 -0.05 -0.03 10 DC =2 10 5 3 I C MAX. (PULSED) I C MAX. (CONTINUOUS) Tc 100 50 30 10 VCE =-5V -10 -5 -3 S 1m 1K 500 300 1 -0.01 -1 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (A) 2003. 7. 24 -3K 1 -1 CURRENT GAIN BANDWIDTH PRODUCT fT (MHz) CAPACITANCE Cob (pF) VBE (sat) COLLECTOR CURRENT IC (A) SATURATION VOLTAGE VCE(sat), VBE(sat), (mV) I C /I B =10 -10 -5 -3 -1K Cob - VCB VCE(sat),VBE(sat) - IC -1K -500 -300 -300 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -10K -5K -3K -100 -30 RA TI ON SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.01 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE VCE (V) 2/3 KTB772 dT - Tc Pc - Tc POWER DISSIPATION PC (W) 160 DERATING dT(%), IC 140 120 100 DI 80 60 S/b SS IP LIM ITE AT IO N LI D M 40 IT ED 20 14 12 10 8 6 4 2 0 0 0 50 100 150 CASE TEMPERATURE Tc ( C) 2003. 7. 24 16 Revision No : 4 200 0 50 100 150 200 CASE TEMPERATURE Tc ( C) 3/3