Philips Semiconductors Product specification Rectifier diodes general purpose FEATURES BY249 series SYMBOL * Low forward volt drop * High thermal cycling performance * Low thermal resistance QUICK REFERENCE DATA VR = 300 V / 600 V / 800 V k 1 VF 1.05 V a 2 IF(AV) = 7 A IFSM 60 A GENERAL DESCRIPTION PINNING Glass-passivated double diffused rectifier diodes. The devices are intended for low frequency power rectifier applications. The BY249 series is supplied in the conventional leaded SOD59 (TO220AC) package. PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. BY249 VRSM VRRM VRWM VR IF(AV) IF(RMS) IFRM IFSM I2t Tstg Tj Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 RMS forward current Peak repetitive forward current Peak non-repetitive forward current. I2t for fusing Storage temperature Operating junction temperature sinusoidal; a = 1.57; Tmb 131 C sinusoidal; a = 1.57; t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 C prior to surge; with reapplied VRWM(max) t = 10 ms MAX.UNIT UNIT - -300 300 -600 600 -800 800 V - 300 600 800 V - 200 200 500 500 700 700 V V - 7 11 60 A A A - 60 66 A A -40 - 18 150 150 A2s C C 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes general purpose BY249 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air. MIN. TYP. MAX. UNIT - - 2.0 K/W - 60 - K/W MIN. TYP. MAX. UNIT - 1.2 0.9 0.1 1.6 1.05 0.4 V V mA STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current IF = 20 A IF = 5 A; Tj = 100 C VR = VRWM; Tj = 125 C September 1998 2 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes general purpose BY249 series 15 PF / W Tmb(max) / C 120 D = 1.0 BY249 Vo = 1.0120 V Rs = 0.0200 Ohms BY229 IFS(RMS) / A 80 70 IFSM 60 0.5 10 130 50 0.2 40 0.1 5 tp I D= 0 2 4 6 IF(AV) / A 8 20 10 t T 0 30 140 tp T 150 12 10 0 1ms Fig.1. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x D. 15 Tmb(max) / C BY249 PF / W 10ms 0.1s tp / s 120 30 BY249 IF / A Tj = 100 C Tj = 25 C Rs = 0.02 Ohms a = 1.57 10s Fig.3. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150C prior to surge with reapplied VRWM. Vo = 1.012 V 10 1s 130 20 140 10 150 8 0 max typ 1.9 2.2 2.8 4 5 0 0 2 4 IF(AV) / A 6 0.5 0 Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 1.5 1 VF / V 2 Fig.4. Typical and maximum forward characteristic IF = f(VF); parameter Tj 10 Transient thermal impedance, Zth j-mb (K/W) 1 0.1 PD 0.01 0.001 1us tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229 10s Fig.5. Transient thermal impedance Zth = f(tp) September 1998 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes general purpose BY249 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.6. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes general purpose BY249 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 5 Rev 1.300