BSV236SPH6327 - Infineon Technologies

2011-07-14

Rev 1.5 Page 1

BSV 236SP

OptiMOS



-P Small-Signal-Transistor Product Summary

VDS -20 V

RDS(on) 175 mΩ

ID-1.5 A

Feature

• P-Channel

• Enhancement mode

• Super Logic Level (2.5 V rated)

• 150°C operating temperature

• Avalanche rated

• dv/dt rated

PG-SOT-363

VPS05604

6

3

1

5

4

2

Gate

pin 3

Drain

pin 1,2,

Source

pin 4

5,6

Marking

X2s

Type Package Tape and Reel inf

BSV 236SP PG-SOT-363 H6327:3000pcs/r.

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

ID

-1.5

-1.2

A

Pulsed drain current

TA=25°C

ID puls -6

Avalanche energy, single pulse

ID=-1.5 A , VDD=-10V, RGS=25Ω

EAS 9.5

mJ

Reverse diode dv/dt

IS=-1.5A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C

dv/dt-6 kV/µs

Gate source voltage VGS ±12 V

Power dissipation

TA=25°C

Ptot 0.56 W

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

ESD Class

JESD22-A114-HBM

Class 0

2011-07-14

Rev 1.5 Page 2

BSV 236SP

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point RthJS - - 90 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

-

220

110

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V(BR)DSS -20 - - V

Gate threshold voltage, VGS = VDS

ID=-8µA

VGS(th) -0.6 -0.9 -1.2

Zero gate voltage drain current

VDS=-20V, VGS=0, Tj=25°C

VDS=-20V, VGS=0, Tj=150°C

IDSS

-

-0.1

-10

-1

-100

µA

Gate-source leakage current

VGS=-12V, VDS=0

IGSS - -10 -100 nA

Drain-source on-state resistance

VGS=-2.5V, ID=-0.8A

RDS(on) - 193 285 mΩ

Drain-source on-state resistance

VGS=-4.5, ID=-1.5A

RDS(on) - 131 175

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air; t ≤10 sec.

2011-07-14

Rev 1.5 Page 3

BSV 236SP

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs çVDSç≥2*çIDç*RDS(on)max

ID=-1.2A

2.2 4.4 - S

Input capacitance Ciss VGS=0, VDS=-15V,

f=1MHz

- 228 - pF

Output capacitance Coss - 92 -

Reverse transfer capacitance Crss - 75 -

Turn-on delay time td(on) VDD=-10V, VGS=-4.5V,

ID=-1A, RG=6Ω

- 5.7 8.5 ns

Rise time tr- 8.5 12.7

Turn-off delay time td(off) - 14.1 21.1

Fall time tf- 12.2 18.3

Gate Charge Characteristics

Gate to source charge Qgs VDD=-10V, ID=-1.5A - -0.4 -0.6 nC

Gate to drain charge Qgd - -1.8 -2.7

Gate charge total QgVDD=-10V, ID=-1.5A,

VGS=0 to -4.5V

- -3.8 -5.7

Gate plateau voltage V(plateau) VDD=-10V, ID=-1.5A - -1.6 - V

Reverse Diode

Inverse diode continuous

forward current ISTA=25°C - - -0.11 A

Inverse diode direct current,

pulsed ISM - - -6

Inverse diode forward voltage VSD VGS=0, |IF| = |ID|- 0.88 1.3 V

Reverse recovery time trr VR=-10V, |IF| = |lD|,

diF/dt=100A/µs

- 16.4 20.5 ns

Reverse recovery charge Qrr - 3.4 4.3 nC

2011-07-14

Rev 1.5 Page 4

BSV 236SP

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

W

1.3 BSV 236SP

Ptot

2 Drain current

ID = f (TA)

parameter: |VGS|≥ 4.5 V

0 20 40 60 80 100 120 °C 160

TA

0

-0.2

-0.4

-0.6

-0.8

-1

-1.2

A

-1.6 BSV 236SP

ID

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

-10 -1 -10 0 -10 1 -10 2

VVDS

-2

-10

-1

-10

0

-10

1

-10

A

BSV 236SP

ID

R

DS(on)

= V

DS

/ I

D

DC

10 ms

1 ms

100 µs

tp = 45.0µs

4 Transient thermal impedance

ZthJS = f (tp)

parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-3

10

-2

10

-1

10

0

10

1

10

2

10

K/W

BSV 236SP

ZthJS

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

2011-07-14

Rev 1.5 Page 5

BSV 236SP

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 80 µs

012345678V10

- VDS

0

2

4

6

8

A

12

- ID

Vgs = -1.8V

Vgs = -2V

Vgs = -2.4V

Vgs = -2.6V

Vgs = -3V

Vgs = -3.4V

Vgs = -3.8V

Vgs = -4.5V

Vgs = -6V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS

0 2 4 6 8 A 11

- ID

0

0.1

0.2

0.3

Ω

0.5

RDS(on)

Vgs = -2V

Vgs = - 2.4V

Vgs= - 2.6V

Vgs = - 3V

Vgs= - 3.4V

Vgs = - 3.8V

Vgs = - 4.5V

Vgs= - 5V

Vgs = - 6V

7 Typ. transfer characteristics

ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max

parameter: tp = 80 µs

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 V2.5

- VGS

0

0.5

1

1.5

2

2.5

3

3.5

4

A

5

- ID

8 Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter: tp = 80 µs

0 0.5 1 1.5 2 2.5 3 3.5 4 A 5

- ID

0

1

2

3

4

5

6

S

8

gfs

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Rev 1.5 Page 6

BSV 236SP

9 Drain-source on-resistance

RDS(on) = f(Tj)

parameter: ID = -1.5 A, VGS = -4.5 V

-60 -20 20 60 100 °C 160

Tj

80

100

120

140

160

180

200

mΩ

240

RDS(on)

typ.

98%

10 Gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS, ID = -8 µA

-60 -20 20 60 100 °C 160

Tj

0.2

0.4

0.6

0.8

1

V

1.4

- VGS(th)

2%

typ.

98%

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz

0 5 10 V20

- VDS

1

10

2

10

3

10

pF

C

Crss

Coss

Ciss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-2

-10

-1

-10

0

-10

1

-10

A

BSV 236SP

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2011-07-14

Rev 1.5 Page 7

BSV 236SP

13 Typ. avalanche energy

EAS = f (Tj), par.: ID = -1.5 A

VDD = -10 V, RGS = 25 Ω

25 50 75 100 °C 150

Tj

0

1

2

3

4

5

6

7

8

mJ

10

EAS

14 Typ. gate charge

|VGS| = f (QGate)

parameter: ID = -1.5 A pulsed

0 1 2 3 4 5 6 nC 8

|QGate|

0

1

2

3

4

5

6

7

8

9

10

V

12

- VGS

0.2 VDS max.

0.5 VDS max.

0.8 VDS max.

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60 -20 20 60 100 °C 180

Tj

-18

-18.5

-19

-19.5

-20

-20.5

-21

-21.5

-22

-22.5

-23

-23.5

V

-24.5 BSV 236SP

V(BR)DSS

Published by

Infineon Technologies AG

81726 Munich, Germany

All Rig hts Reserved.

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For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Of f ice.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or p r o tec t human life . I f they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

2011-07-14

Rev 1.5 Page 1

BSV 236SP