TN3019A
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 500 mA and
collector voltages up to 80 V. Sourced from Process 12.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Em itter Vol t age 80 V
VCBO Collector-Base Voltage 140 V
VEBO Emitter-Base Voltage 7.0 V
ICCollector Current - Continuous 1.0 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
TN3019A
PDTotal D evice Dissip ation
Derate above 25°C1.0
8.0 W
mW/°C
RθJC Thermal R esistance, Junct ion to Case 125 °C/W
RθJA Thermal Resistance, Junctio n to Ambient 50 °C/W
TO-226
CBE
1997 Fairchild Semiconductor Corporation
TN3019A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Col lector-Emit t er Breakdown Voltage* IC = 30 mA, IB = 080V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 140 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100
µ
A, IC = 0 7.0 V
ICBO Collecto r-Cutoff Current VCB = 90 V, IE = 0
VCB = 90 V, IE = 0, TA = 150°C0.01
10
µ
A
µ
A
IEBO Emi t t er-Cut off Current VEB = 5.0 V, IC = 0 0.01
µ
A
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V
IC = 10 mA, V CE = 10 V
IC = 150 mA, V CE = 10 V
IC=150 mA, VCE=10 V,TA=-55°C
IC = 500 mA, V CE = 10 V *
IC = 1.0 A, VCE = 10 V*
50
90
100
40
50
15
300
VCE(sat)Collector-Emitt er S aturation Voltage IC = 150 mA , IB = 15 mA
IC = 500 mA, IB = 50 mA 0.2
0.5 V
V
VBE(sat)Base-Emitter Saturat i on V ol tage IC = 10 mA , IB = 15 mA 1.1 V
fTCurrent Gain - Bandwidth Product IC = 50 mA , VCE = 10 V,
f = 20 MHz 100 MHz
Cobo Output Capacitance VCB = 10 V, I E = 0, f = 1.0 MHz 12 pF
Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz 60 pF
hfe Smal l -S i gnal Current Gai n IC = 1.0 m A, VCE = 5.0 V,
f = 1.0 kHz 80 400
rb’CcCollector Base Ti me Constant IE = 10 mA , VCB = 10 V,
f = 4.0 MHz 400 pS
NF Noise Figure IC = 100 mA , VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 4.0 dB
TN3019A
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300 1000
0
50
100
150
200
250
300
350
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 1V
CE
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
0.1 1 10 50
0
20
40
60
80
100
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Ccb
C
eb
f = 1.0 MHz
C o ll ector -C u to ff Cu r rent
vs Amb ient Temp er atu re
25 50 75 100 125
0.1
1
10
T - AMBI ENT TEMPER ATUR E ( C)
I - C OLLE CTOR CU RR ENT (nA)
A
CBO
°
V = 80V
CB
C o ll ecto r-Emitter Saturatio n
Vo lt ag e vs C ollector Cu rrent
0.1 1 10 100 1000
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRE NT (mA)
V - COLLEC TOR EMITTE R VOLTA GE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β= 10
B ase-Emitter Satur ati o n
Vo lt ag e vs Co llector Cur rent
0.1 1 10 100 1000
0
0.4
0.8
I - COLLECTOR CURRENT (mA)
V - BASE EMITT ER VOL TAGE ( V)
C
BESAT
β= 10
25 °C
- 40 °C
125°C
Base Emitter ON Voltage vs
Collect or Curre nt
0.1 1 10 100 1000
0
0.2
0.4
0.6
0.8
1
I - COLLE CTOR CU RR EN T (mA )
V - BASE EMI TT ER O N VO L TAGE ( V)
C
BEON
V = 1V
CE
25 °C
- 40 °C
125 °C
TN3019A
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
TO-226
Sma ll S ignal Current Gain at 20 MHz
1 10 100 500
0
2
4
6
8
10
I - COLLECTO R CURRENT (mA)
h - SMALL SIGNA L CURRENT GAIN
f = 20 MHz
V = 1.0V
CE
V = 10V
CE
C
FE
Swit c hing Times vs
Collector Current
10 100 500 1000
0
200
400
600
800
1000
I - COLLECTOR CURRENT (mA)
TIME (ns)
tf
C
td
tr
ts
Turn On and Turn Off Times vs
Collector Current
10 100 500 1000
0
200
400
600
800
1000
I - COLLECTOR CURRENT (mA)
TIME (n s )
I = I = I
V = 50V 10
toff
t
B1 C
B2
CC
on
C
TN3019A
NPN General Purpose Amplifier
(continued)
Test Circuit
To Sampling Scope
Rise Time ≤ 5.0 ns
Input Z ≈ 100 kΩ
Pulse Source
Rise Time ≤ 5.0 ns
Fall Time ≤ 10 ns
1.0 KΩΩ
ΩΩ
Ω
- 4.0 V 50 V
50 ΩΩ
ΩΩ
Ω
Rb
- 1 µµ
µµ
µF
1.5 µµ
µµ
µS
0 V
10 V
RL
RbRL
IC
314 Ω
157 Ω
94 Ω
150 mA
200 mA
500 mA
330 Ω
167 Ω
100 Ω
FIGURE 1: tON, tOFF Test Circuit
TN3019A
NPN General Purpose Amplifier
(continued)
TO-226AE Tape and Reel Data
October 1999, Rev. A1
TO-226AE Packaging
Configuration: Figur e 1.0
1,500 un its per
EO70 box for
std option
5EO70boxesper
Intermediate Box
FSCINT Label
530mm x 130mm x 83mm
Intermediate box
7,500 un its maximum
per intermediate box
for std option
FSCINT Barcode Label
114mm x 102mm x 51mm
EO70 Immediate Box
Anti-static
Bubble Sheets
(TO-226AE) BULK PACKING INFORMATION
EOL CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTION STD NO LEAD CLIP 1.0 K / BOX
J05Z TO-5 OPTION STD NO LEAD CLIP 1.0 K / BOX
NO EOL
CODE TO-226 STANDARD
STRAIGHT NO LEADCLIP 1.5 K / BOX
TO-226AE TNR/AMMO PACKING INF ROMATION
Packing Style Quantity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
Unit weight = 0.300gm
Reel weight with components = 0.868 kg
Ammo weight with components = 0.880 kg
Max quantity per intermediate box = 10,000 units
AMMO PACK OPTION
See Fig 3.0 for2 Ammo
Pack Options
BULK OPTION
See Bulk Packing
Information table
375mm x 267mm x 375mm
Intermediate Box
FSCINT
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
FSCINT
Label
Customized
Label
F63TNR
Barcode Label
5 Ammo box es per
Intermediate Box
Customized
Label
327mm x 158mm x 135mm
Immediate Box
LOT: CBVK741B019
NSID: PN2222N
D/C1: D9842 SPEC REV: B2
SPEC:
QTY: 10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Intermediate Box
TAPE and REELOPTION
See Fig 2.0 for various
Reeling Styles
F63TNR Label sample
FSCINT Label sampl e
Customized
Label
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F (F63TNR)3
©2000 Fairchild Semiconductor International
TO-226AE Tape and Reel Data, continued
October 1999, Rev. A1
TO-226AE ReelingStyle
Configuration:
Figure 2.0
Style "A" D26Z, D70Z (s/h)
Machine Option"A"(H)
Style "E" D27Z, D71Z (s/h)
Machine Option"E"(J)
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D74Z (M)
TO-226AE Radial Ammo Packaging
Configuration:
Figure 3.0
T O-226AE Tape and Reel Data, continued
October 1999, Rev. A1
ITEM DESCRIPTION
Base of Package to Lead Bend
Component Height
Lead Clinch Height
Component Base Height
Component Alignment (side/side)
Component Alignment ( front/back )
Component Pitch
Feed Hole Pitch
HoleCenter to First Lead
HoleCenterto Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped LeadThickness
Carrier Tape Thickness
Carrier TapeWidth
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Hb
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0.098 (max)
1.078 (+/- 0.0 50)
0.630 (+/- 0.0 20)
0.748 (+/- 0.0 20)
0.040 (max)
0.031 (max)
0.500 (+/- 0.0 20)
0.500 (+/- 0.0 08)
0.150 (+0.009, -0.010 )
0.247 (+/- 0.0 07)
0.104 (+/- 0 .010)
0.018 (+0.002, -0.003)
0.429 (max)
0.209 (+0.051 , -0.052)
0.032 (+/- 0.0 06)
0.021 (+/- 0.006)
0.708 (+0.020 , -0.019)
0.236 (+/- 0.0 12)
0.035 (max)
0.360 (+/- 0.0 25)
0.157 (+0.008, -0.007)
0.004 (max)
Note: All dimensions are in inches.
Hb
H1 HO
PO
P2
P1 F1
DO
PPd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
ITEM DESCRIPTION SYMBOL MINIMUM MAXIMUM
Reel Diameter D1 13.975 14.025
Arbor Hole Dia me ter (Standard) D2 1.160 1 .200
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess De pt h W 1 0.370 0.570
Flange to Flange Inner W idth W 2 1.630 1.690
Hu b to Hu b Center W idth W 3 2.09 0
Note: All dimensions are inches
SEN SI TIV E D EVIC ES
ELECTROSTATIC
D1
D3
W2
W1
W3
D4
D2
TO-226AE Tape andReel Taping
Dimension Configuration:
Figur e 4.0
TO-226AE Reel
Configuration:
Figur e 5.0
User DirectionofFeed
Customized Label
F63TNR Label
TO-226AE (FS PKG Code 95, 99)
TO-226AE Package Dimensions
October 1999, Rev. A1
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
S0.51-0.36;
S0.76-
0.36;
S1.40-1.14;
S1.40-1.14;
S4.70-4.32;
S2.41-2.13;
S4.45-3.81;
5" TYP
S1.52-1.02;
2" TYP
2" TYP
S7.73-7.10;
S7.87-7.37;
S15.61-14.47;
S1.65-1.27;
0.51
S0.48-0.30;
TO-226AE (95,99)
1
99 95
3CB
2BC
1EE
PIN
32
For leadformed option ordering,
refer to Tape & Reel data information.
©2000 Fairchild Semiconductor International
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Formative or
In Design
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