PMBTA42,215 - NEXPERIA

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

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use http://www.nexperia.com

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salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

1. Product profile

1.1 General d escript ion

NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted

Device (SMD) plastic package.

PNP complement: PMBTA92.

1.2 Features

High voltage (max. 300 V)

1.3 Applications

Telephony and professional communication equipment

1.4 Quick reference data

2. Pinning inform ation

PMBTA42

300 V, 100 mA NPN high-voltage transistor

Rev. 05 — 12 December 2008 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 300 V

ICcollec tor curr ent - - 100 mA

hFE DC current gain VCE =10V

IC=1mA 25 - -

IC=10mA 40 - -

IC=30mA 40 - -

Ta ble 2. Pinning

Pin Description Simplified outline Graphic symbol

1 base

2 emitter

3collector

sym02

Product data sheet Rev. 05 — 12 December 2008 2 of 9

NXP Semiconductors PMBTA42

300 V, 100 mA NPN high-voltage transistor

3. Orde ri ng info r mat io n

[1] /DG: halogen-free

4. Marking

[1] /DG: halogen-free

[2] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB) , single-sided copper, tin-plated and standard

footprint.

Table 3. Ordering informat ion

Type number[1] Package

Name Description Version

PMBTA42 - plastic surface-mounted package; 3 leads SOT23

PMBTA42/DG

Table 4. Marking codes

Type number[1] Ma rking code[2]

PMBTA42 *1D

PMBTA42/DG *BV

Ta ble 5. Limiting v a lues

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 300 V

VCEO collector-emitter voltage open base - 300 V

VEBO emitter-base voltage open collector - 6 V

ICcollec tor curr ent - 100 mA

ICM peak collector current single pulse;

tp≤1ms -200mA

IBM peak base current single pulse;

tp≤1ms -100mA

Ptot total power dissipation Tamb ≤25 °C[1] -250mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage tempera ture −65 +150 °C

Product data sheet Rev. 05 — 12 December 2008 3 of 9

NXP Semiconductors PMBTA42

300 V, 100 mA NPN high-voltage transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resist ance from

junction to ambient in free air [1] - - 500 K/W

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector- bas e cut-off

current VCB =200V; I

E= 0 A - - 100 nA

IEBO emitter-base cut-off

current VEB =6V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =10V

IC=1mA 25 - -

IC=10mA 40 - -

IC=30mA 40 - -

VCEsat collector-emitter

saturation voltage IC=20mA; I

B= 2 mA - - 500 mV

VBEsat ba se-emi tte r satur ation

voltage IC=20mA; I

B= 2 mA - - 900 mV

Cre feedback capacitance VCB =20V; I

C=i

c=0A;

f=1MHz --3pF

fTtransition frequency VCE =20V; I

C=10mA;

f=100MHz 50--MHz

Product data sheet Rev. 05 — 12 December 2008 4 of 9

NXP Semiconductors PMBTA42

300 V, 100 mA NPN high-voltage transistor

8. Package outline

Fig 1. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

Product data sheet Rev. 05 — 12 December 2008 5 of 9

NXP Semiconductors PMBTA42

300 V, 100 mA NPN high-voltage transistor

9. Packing infor mati on

[1] For further information and the availability of packing methods, see Section 13.

[2] /DG: halogen-free

10. Soldering

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

PMBTA42 SOT23 4 mm pitch, 8 mm tape and reel -215 -235

PMBTA42/DG

Fig 2. Reflow soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied are

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

Product data sheet Rev. 05 — 12 December 2008 6 of 9

NXP Semiconductors PMBTA42

300 V, 100 mA NPN high-voltage transistor

Fig 3. Wa ve soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied are

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 05 — 12 December 2008 7 of 9

NXP Semiconductors PMBTA42

300 V, 100 mA NPN high-voltage transistor

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Cha nge notic e Supersedes

PMBTA42_5 20081212 Product data sheet - PMBTA42_4

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Type number PMBTA42/DG added

•Table 4 “Marking codes”: enhanced

•Section 12 “Leg al informatio n”: updated

PMBTA42_4 20040122 Product specification - PMBTA42_3

PMBTA42_3 19990422 Product specification - PMBTA42_43_CNV_2

Product data sheet Rev. 05 — 12 December 2008 8 of 9

NXP Semiconductors PMBTA42

300 V, 100 mA NPN high-voltage transistor

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product statu s of device(s) described in this document may have changed since this document was published and may dif fer in ca se of mult iple d evices. The latest pro duct sta tus

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, wh ich is availa bl e on req ues t via the local NXP Semiconducto rs sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life su pport equipment, nor i n applications w here failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 6 0134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact informat ion

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

 
NXP Semiconductors PMBTA42
V, 100 mA NPN high-voltage transistor
© NXP B.V. 2008. All rights reserved .
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 December 2008
Document identifier: PMBTA42_5
Please be aware that important notices concerning this document and the product(s)
described herein , have been included in section ‘Legal informa tion’. 
Contents
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .  1
1 General description  . . . . . . . . . . . . . . . . . . . . .  1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
3 Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
4 Quick reference data  . . . . . . . . . . . . . . . . . . . .  1
Pinning information. . . . . . . . . . . . . . . . . . . . . .  1
Ordering information. . . . . . . . . . . . . . . . . . . . .  2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  2
Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . .  2
Thermal characteristics  . . . . . . . . . . . . . . . . . .  3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  4
Packing information  . . . . . . . . . . . . . . . . . . . . .  5
Soldering  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  5
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .  7
Legal information. . . . . . . . . . . . . . . . . . . . . . . .  8
1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .  8
2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .  8
Contact information. . . . . . . . . . . . . . . . . . . . . .  8
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9