FDV301N - ON SEMICONDUCTOR

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FDV301N

Digital FET , N-Channel

General Description Features

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter FDV301NUnits

VDSS, VCC Drain-Source Voltage, Power Supply Voltage 25 V

VGSS, VIGate-Source Voltage, VIN 8V

ID, IO Drain/Output Current - Continuous 0.22 A

0.5

PDMaximum Power Dissipation 0.35 W

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm) 6.0 kV

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

25 V, 0.22 A continuous, 0.5 A Peak.

RDS(ON) = 5 Ω @ VGS= 2.7 V

RDS(ON) = 4 Ω @ VGS= 4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th) < 1.06V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors with one DMOS

FET.

This N-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one N-channel FET can

replace several different digital transistors, with different bias

resistor values.

Mark:301

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223

SuperSOTTM-6

GND

Vcc

INVERTER APPLICATION

OUT

June 2009

FDV301N Rev.F1

Inverter Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

IO (off) Zero Input Voltage Output Current VCC = 20 V, VI = 0 V 1µA

VI (off) Input Voltage VCC = 5 V, IO = 10 µA0.5 V

VI (on) VO = 0.3 V, IO = 0.005 A 1V

RO (on) Output to Ground Resistance VI = 2.7 V, IO = 0.2 A4 5 Ω

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 25 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C25 mV / oC

IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1µA

TJ = 55°C 10 µA

IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA

ON CHARACTERISTICS (Note)

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C-2.1 mV / oC

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA0.70 0.85 1.06 V

RDS(ON) Static Drain-Source On-Resistance VGS = 2.7 V, ID = 0.2 A 3.8 5Ω

TJ =125°C 6.3 9

VGS = 4.5 V, ID = 0.4 A 3.1 4

ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V 0.2 A

gFS Forward Transconductance VDS = 5 V, ID= 0.4 A 0.2 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 10 V, VGS = 0 V,

f = 1.0 MHz 9.5 pF

Coss Output Capacitance 6 pF

Crss Reverse Transfer Capacitance 1.3 pF

SWITCHING CHARACTERISTICS (Note)

tD(on)Turn - On Delay Time VDD = 6 V, ID = 0.5 A,

VGS = 4.5 V, RGEN = 50 Ω3.2 8ns

trTurn - On Rise Time 6 15 ns

tD(off) Turn - Off Delay Time 3.5 8ns

tfTurn - Off Fall Time 3.5 8ns

QgTotal Gate Charge VDS = 5 V, ID = 0.2 A,

VGS = 4.5 V 0.49 0.7 nC

Qgs Gate-Source Charge 0.22 nC

Qgd Gate-Drain Charge 0.07 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current 0.29 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.29 A (Note)0.8 1.2 V

Note:

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV301N Rev.F1

0 0.5 1 1.5 2 2.5 3

0.1

0.2

0.3

0.4

0.5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

3.5

2.7

2.5

V = 4.5V

GS 4.0

2.0

1.5

3.0

0 0.1 0.2 0.3 0.4 0.5

0.6

0.8

1.2

1.4

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 2.0V

2.7

3.0

4.04.5

3.5

2.5

R DS(on ), NORMALIZED

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.2

1.4

1.6

1.8

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

V = 2.7 V

I = 0.2A

R , NORMALIZED

DS(ON)

Figure 3. On-Resistance Variation

with Temperature.

0.5 1 1.5 2 2.5

0.05

0.1

0.15

0.2

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 5.0V

T = -55°C

Figure 5. Transfer Characteristics.

0.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

0.2

0.5

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

25°C

-55°C

V = 0V

Figure 6. Body Diode Forward Voltage

Variation with Source Current and Temperature.

Figure 4. On Resistance Variation with

Gate-To-Source Voltage.

22.5 33.5 4

V , GATE TO SOURCE VOLTAGE (V)

R , ON-RESISTANCE (OHM)

DS(on)

125°C

25°C

I = 0.2A

FDV301N Rev.F1

00.1 0.2 0.3 0.4 0.5 0.6

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

I = 0.2A

15V

V = 5V

DS 10V

0.5 1 2 5 10 15 25 35

0.01

0.02

0.05

0.1

0.2

0.5

V , DRAI N-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

100ms

10s

1ms

RDS(ON) LIMIT

V = 2.7V

SINGLE PULSE

R = 357 °C/W

T = 25°C

θJA

0.001 0.01 0.1 1 10 100 300

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =357° C/W

T = 25°C

θJA

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 11. Transient Thermal Response Curve.

0.1 0.5 1 2 5 10 25

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

iss

f = 1 MHz

V = 0V

oss

rss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical And Thermal Characteristics

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 357 °C/W

θJA

T - T = P * R (t)

θJAA

P(pk)

1 t

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

www.fairchildsemi.com

FDV301N Rev.F1 3

TRADEMARKS

The following includes regist ered and unregister ed trademarks and se rvice marks, owned by Fairchild Semiconductor and/o r its global subsidia ries, and is not

intended to be an exh austive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accorda nce with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reaso nably expect ed t o cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSWITCH™ *

™*

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FETBench™

FlashWriter® *

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™®*

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

µSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contain s th e design specifications for product development. Specifications

may change in any manner with out notice.

Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconduct or reserves the right to make changes at any time without

notice to improve design.

No Identification Neede d Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to impr ove the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor part s is a growing problem in the industry. All manufactures of se miconductor products are experien cing counterfeiting of their

parts. Customers who ina dvertent ly pu rchase counte rfeit par ts e xperien ce man y problems such as loss o f brand re putat ion, subst anda rd performance, fa iled

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit pa rts. Fairch ild strongly encou rages custome rs to purchase Fairch ild parts either dire ctly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts boug ht from Unauthorized Sources. Fairchild is

committed to co mbat this global pr oblem and encourag e our customer s to do thei r part in stopping this pract ice by buying direct or f rom authorized distribut ors.

Rev. I40

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative