P-Channel Enhancement Mode
MOSFET Amplifier/Switch
2N4352
FEATURES
•• Low ON Resistance
•• Low Ca pacita nce
•• High G ai n
•• P-Chan nel Com pl ement to 2N4341
ABSOLUTE M AXIM UM R A T INGS
(TA = 25oC unless o ther w ise noted)
Drain- Sour ce Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain- G ate Volta ge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate- Sour ce V o ltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Cur re nt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30m A
Stor age Temper at ure R a nge. . . . . . . . . . . . . -65oC t o +200oC
Oper at ing Temper atur e Ra nge . . . . . . . . . . . - 55oC t o +150oC
Lead Tem pe ra tu re (So ld erin g, 10sec). . . . . . . . . . . . . +300oC
Power Dissipat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Der ate ab o ve 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/oC
NOTE: Str esses above those listed under "Abso lute Maxim um
Ratings" may cause permanent dam age to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the s pecifications is not implied. Exposure to absolute maximum
rating conditions for extended per i ods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
2N4352 Herm etic TO -72 -55oC to +150oC
X2N4352 Sort ed Chips in Car rier s -55oC to +150oC
LLC
PIN CONFIGURATI O N
TO-72
G
DCS
1503
ELECTRICA L CHARACTERI STIC S (TA = 2 5oC unless other wise sp ecif ied)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
V(BR)DSX Drain-Source Breakdown Voltage -25 Vdc ID = -10µA, VGS = 0
IDSS Zero-Gate-Voltage Drain Current -10
-10 nAdc
µAdc VDS = -10V, VGS = 0, TA = 25oC
VDS = -10V, VGS = 0, TA = 150oC
IGSS Gate Reverse Current ±10 pA VGS = ±30V, VDS = 0
VGS(th) Gate Threshold Voltage -1.0 -5.0 Vdc VDS = -10V, ID = -10µA
VDS(on) Drain-Source On-Voltage -1.0 V ID = -2mA, VGS = -10V
ID(on) On-State Drain Current -3.0 mA VGS = -10V, VDS = -10V
rDS(on) Drain-Source Resist ance 600 ohms VGS = -10V, ID = 0, f = 1.0kHz
| yfs | Forward Tra nsfer Admittance 1000 µmho VDS = -10V, ID = 2.0mA, f = 1.0kHz
Ciss Input Capacitance 5.0
pF
VDS = -10V, VGS = 0, f = 140MHz
Crss Reverse Transfer Capacitance 1.3 VDS = 0, VGS = 0, f = 140MHz
Cd(sub) Drain-Substrate Capacita nce 5.0 VD(sub) = -10V, f = 140kHz
td1 Tu rn-On Dela y 45
ns ID = -2.0mAdc, VDS = -10Vdc
VGS = -10V
trRise T ime 65
td2 Turn-Off Delay 60
tfFall Time 100
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