TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/542
T4-LDS-0151 Rev. 2 (100858) Page 1 of 3
DEVICES LEVELS
2N6762 JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 500 Vdc
Gate – Source Voltage VGS ±20 Vdc
Continuous Drain Current
T
C = +25°C ID1 4.5 Adc
Continuous Drain Current
T
C = +100°C ID2 3.0 Adc
Max. Power Dissipation
T
C = +25°C Ptl 75
(1) W
Drain to Source On State Resistance Rds(on) 1.5
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 3A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS 500 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 400V
VGS = 0V, VDS = 500V, Tj = +125°C
VGS = 0V, VDS = 400V, Tj = +125°C
IDSS1
IDSS2
IDSS3
25
1.0
0.25
µAdc
mAdc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 3A pulsed
VGS = 10V, ID = 4.5A pulsed
VGS = 10V, ID = 3.0A pulsed, Tj = +125°C
rDS(on)1
rDS(on)2
rDS(on)3
1.5
1.80
3.3
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = 4.5A pulsed VSD 1.4 Vdc
TO-204AA
(TO-3)
2N6762
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
T4-LDS-0151 Rev. 2 (100858) Page 2 of 3
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V, ID = 4.5A
VDS = 400V
Qg(on)
Qgs
Qgd
40
6.0
20
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 4.5A, VGS = 10Vdc,
Gate drive impedance = 7.5Ω,
VDD = 250Vdc
td(on)
tr
td(off)
tf
30
40
80
30
ns
Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V,
IF = 4.5A trr 900 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http://www.microsemi.com
T4-LDS-0151 Rev. 2 (100858) Page 3 of 3
PACKAGE DIMENSIONS
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CD .875 22.23
CH .250 .360 6.35 9.14
HR .495 .525 12.57 13.34
HR1 .131 .188 3.33 4.78
HT .060 .135 1.52 3.43
LD .038 .043 0.97 1.09
LL .312 .500 7.92 12.70
LL1 .050 1.27
MHD .151 .161 3.84 4.09
MHS 1.177 1.197 29.90 30.40
PS .420 .440 10.67 11.18 3, 5
PS1 .205 .225 5.21 5.72 3, 5
s1 .655 .675 16.64 17.15
NOTES:
1 Dimensions are in inches.
2 Millimeters are given for general information only.
3 These dimensions should be measured at points .050 inch (1.27
mm) and .055 inch (1.40 mm) below seating plane. When
gauge is not used measurement will be made at the seating
plane.
4 The seating plane of the header shall be flat within .001 inch
(0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930
inch (23.62 mm) diameter circle on the center of the header and
flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm)
convex overall.
5 Mounting holes shall be deburred on the seating plane side.
6 Drain is electrically connected to the case.
7 In accordance with ASME Y14.5M, diameters are equivalent to
φx symbology.
* FIGURE 1: Physical dimensions of transistor (TO-204AA) .
