Did you mean: 5SLD1000N330300
Product Datasheet Search Results:
5 Pages, 316 KB, Original- 5SLD1000N330300
- Abb Switzerland Ltd. Semiconductors
- 1000 A, 3300 V, SILICON, RECTIFIER DIODE
9 Pages, 437 KB, Original- 5SNA1000N330300
- Abb Switzerland Ltd. Semiconductors
- 3300 V, N-CHANNEL IGBT
Product Details Search Results:
Abb.com/5SLD1000N330300
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"HIPAK-4","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Rep Pk Reverse Voltage-Max":"3300 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"1000 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"9000 A","Terminal Position":"UPPER","Diode Type":"RECTIFIER DIODE","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 2 EL...
1351 Bytes - 13:47:14, 20 January 2025
Abb.com/5SNA1000N330300
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"2100 ns","Collector-emitter Voltage-Max":"3300 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"790 ns","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Config...
1311 Bytes - 13:47:14, 20 January 2025
