BSS110 - Fairchild Semiconductor

May 2000

BSS84 / BSS110

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

____________________________________________________________________________________________

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter BSS84 BSS110 Units

VDSS Drain-Source Voltage -50 V

VDGR Drain-Gate Voltage (RGS < 20 KΩ)-50 V

VGSS Gate-Source Voltage - Continuous ±20 V

IDDrain Current - Continuous @ TA = 30/35oC-0.13 -0.17 A

- Pulsed @ TA = 25oC-0.52 -0.68

PDMaximum Power Dissipation TA = 25°C0.36 0.63 W

TJ,TSTG Operating and Storage Temperature Range -55 to 150°C

TLMaximum lead temperature for soldering

purposes, 1/16" from case for 10 seconds 300 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient 350 200 °C/W

BSS84 Rev. C2 / BSS110. Rev. A3

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is designed to minimize on-state resistance, provide

rugged and reliable performance and fast switching. They

can be used, with a minimum of effort, in most applications

requiring up to 0.17A DC and can deliver pulsed currents up

to 0.68A. This product is particularly suited to low voltage

applications requiring a low current high side switch.

BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V.

BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V

Voltage controlled p-channel small signal switch.

High density cell design for low RDS(ON) .

High saturation current.

BSS84

BSS110

(TO-236AB)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions TypeMin Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µAAll -50 V

IDSS Zero Gate Voltage Drain Current VDS = -50 V,

VGS = 0 V All -15 µA

TJ = 125°C -60 µA

VDS = -25 V, VGS = 0 V -0.1 µA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V All -10 nA

ON CHARACTERISTICS (Note 1)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA All -0.8 -1.75 -2 V

RDS(ON) Static Drain-Source On-Resistance VGS = -5V, ID = -0.10 A BSS84 3.2 10 Ω

VGS = -10 V, ID = -0.17 A BSS110 2.2 10

gFS Forward Transconductance VDS = -25 V, ID = -0.10ABSS84 0.05 0.27 S

VDS = -10 V, ID = -0.17 ABSS110 0.05 0.29

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz BSS84 37 45 pF

BSS110 37 40

Coss Output Capacitance All 16 25 pF

Crss Reverse Transfer Capacitance All 512 pF

SWITCHING CHARACTERISTICS (Note 1)

tD(on) Turn - On Delay Time VDD = -30 V, ID = -0.27 A,

VGS = -10 V, RGEN = 50 ΩAll 12 nS

trTurn - On Rise Time All 50 nS

tD(off) Turn - Off Delay Time All 10 nS

tfTurn - Off Fall Time All 25 nS

DRAIN-SOURCE DIODE CHARACTERISTICS

ISContinuous Source Diode Current BSS84 -0.13 A

BSS110 -0.17

ISM Maximum Pulsed Source Diode Current (Note 1) BSS84 -0.52 A

BSS110 -0.68

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.26 A (Note 1) BSS84 -0.95 -1.2 V

VGS = 0 V, IS = -0.34 A (Note 1) BSS110 -1 -1.2

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

BSS84 Rev. C2 / BSS110. Rev. A3

-6-5-4-3-2-10

-1

-0.8

-0.6

-0.4

-0.2

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -10V

-8.0

-4.0

-6.0 -5.0

-4.5

-3.5

-2.5

-3.0

-1-0.8-0.6-0.4-0.2

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -3V

R , NORMALIZED

DS(on)

-3.5

-4.5

-5.0

-6.0

-10

-4.0

-8.0

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage

Typical Electrical Characteristics

-50 -25 025 50 75 100 125 150

0.6

0.8

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(ON)

I = -0.13A

V = -10V

-1-0.8-0.6-0.4-0.2

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

R , NORMALIZED

DS(on)

25°C

-55°C

V = -10V

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance Variation

with Drain Current and Temperature

-8-6-4-20

-1

-0.8

-0.6

-0.4

-0.2

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C 125°C

V = -10V

T = -55°C

-50 -25 025 50 75 100 125 150

0.85

0.9

0.95

1.05

1.1

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

V = V

I = -1mA

DS GS

V , NORMALIZED

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation

with Temperature

BSS84 Rev. C2 / BSS110. Rev. A3

-50 -25 025 50 75 100 125 150

0.9

0.95

1.05

1.1

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I = -250µA

BV , NORMALIZED

DSS

0.2 0.4 0.6 0.8 11.2 1.4 1.6

0.001

0.005

0.01

0.05

0.1

0.2

0.5

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

V = 0V

T = 125°C

25°C

-55°C

Figure 7. Breakdown Voltage

Variation with Temperature

Figure 8. Body Diode Forward Voltage

Variation with Source

Current and Temperature

Typical Electrical Characteristics (continued)

00.5 11.5 2

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

V = -10V

I = -0.13A

D-20V -40V

0.1 0.2 0.5 1 2 5 10 20 30 50

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

iss

f = 1 MHz

V = 0V

oss

rss

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

VDD

OUT

VGS DUT

RGEN 10%

50%

90%

10%

90%

50%

VIN

VOUT

on off

d(off) f

d(on)

t t

INVERTED

10%

PULSE WIDTH

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

BSS84 Rev. C2 / BSS110. Rev. A3

-1-0.8-0.6-0.4-0.2

0.1

0.2

0.3

0.4

0.5

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

T = -55°C

V = -10V

125°C

25°C

1 2 5 10 20 30 50 80

0.005

0.01

0.05

0.1

0.5

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

V = -10V

SINGLE PULSE

T = 25°C

RDS(ON) Limit

100ms

1ms

10ms

100us

10s

Figure 13. Transconductance Variation with Drain

Current and Temperature

Figure 14. Maximum Safe Operating Area

Typical Electrical Characteristics (continued)

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.01

0.05

0.1

0.2

0.5

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 350 C/W

θJAθJA

θJA

T - T = P * R (t)

θJA

P(pk)

1 t

Figure 15. Transient Thermal Response Curve

Note : Characterization performed using a circuit board with 175oC/W

typical case-to-ambient thermal resistance.

January 2000, Rev. B

TO-92 Package Dimensions

TO-92; TO-18 Reverse Lead Form (J35Z Option)

(FS PKG Code 92, 94, 96)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.22

Note: All package 97 or 98 transistors are leadformed

to this configuration prior to bulk shipment. Order

L34Z option if in-line leads are preferred on package

97 or 98.

**;

* Standard Option on 97 & 98 package code

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

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not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF F AIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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In Design

First Production

Full Production

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