© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 200 V
VGSS Continuous ±15 V
VGSM Transient ±25 V
ID25 TC= 25°C -106 A
IDM TC= 25°C, Pulse Width Limited by TJM - 400 A
IATC= 25°C -100 A
EAS TC= 25°C3J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 830 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~
IISOL ≤ 1mA, t = 1s 3000 V~
MdMounting Torque for Base Plate 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 200 V
VGS(th) VDS = VGS, ID = - 250μA - 2.5 - 4.5 V
IGSS VGS = ±15V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V - 25 μA
TJ = 125°C - 300 μA
RDS(on) VGS = -10V, ID = 60A, Note 1 30 mΩ
IXTN120P20T VDSS = - 200V
ID25 = - 106A
RDS(on) ≤≤
≤≤
≤ 30mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
DS100402(10/11)
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Advance Technical Information
TrenchPTM
Power MOSFETs
Features
zInternational Standard Package
zLow Intrinsic Gate Resistance
zminiBLOC with Aluminum Nitride
Isolation
z Avalanche Rated
zExtended FBSOA
zFast Intrinsic Recitifier
z Low RDS(ON) and QG
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switching
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
zBattery Charger Applications
miniBLOC
E153432
G
D
S
S
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Downloaded from Elcodis.com electronic components distributor
IXTN120P20T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = - 60A, Note 1 85 145 S
Ciss 73 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 2550 pF
Crss 480 pF
td(on) 90 ns
tr 85 ns
td(off) 200 ns
tf 50 ns
Qg(on) 740 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = - 60A 220 nC
Qgd 120 nC
RthJC 0.15 °C/W
RthCS 0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V -120 A
ISM Repetitive, Pulse Width Limited by TJM - 480 A
VSD IF = -100A, VGS = 0V, Note 1 -1.4 V
trr 300 ns
QRM 3.3 μC
IRM 25.6 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = - 60A
RG = 1Ω (External)
IF = - 60A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
(M4 screws (4x) supplied)
SOT-227B (IXTN) Outline
Downloaded from Elcodis.com electronic components distributor
© 2011 IXYS CORPORATION, All Rights Reserved
IXTN120P20T
Fi g . 1. Output Ch ar ac ter i sti cs @ TJ = 25ºC
-120
-100
-80
-60
-40
-20
0
-3-2.5-2-1.5-1-0.50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 6V
- 4
V
- 5
V
Fig. 2. Extended Output Characteristics @ T J = 25ºC
-300
-250
-200
-150
-100
-50
0
-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 5
V
- 6
V
Fi g . 3. Ou tp u t C h ar ac ter i sti cs @ TJ = 125ºC
-120
-100
-80
-60
-40
-20
0
-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 7V
- 6V
- 4V
- 5V
Fig. 4. RDS(on) Normalized to ID = - 60A vs.
Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= -120A
I
D
= - 60A
Fig. 5. RDS(on) No r mali z ed to I D = - 60A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-280-240-200-160-120-80-400
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fi g. 6. Maximum Drain C u r r en t vs.
Case Temp er ature
-120
-100
-80
-60
-40
-20
0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Amperes
Downloaded from Elcodis.com electronic components distributor
IXTN120P20T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Inpu t Adm ittance
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-5.8-5.4-5-4.6-4.2-3.8-3.4
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
-220-200-180-160-140-120-100-80-60-40-200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-300
-250
-200
-150
-100
-50
0
-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4-0.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 100 200 300 400 500 600 700
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= -100V
I
D
= - 60A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fi g . 12. F or w ard -B i as Safe Op er ati n g Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
--
-
-
-
-
100ms
-
Downloaded from Elcodis.com electronic components distributor
© 2011 IXYS CORPORATION, All Rights Reserved
IXTN120P20T
Fig . 1 4. R esistive Turn- o n R ise Time vs.
Drain Current
60
80
100
120
140
160
180
-120-110-100-90-80-70-60
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= -100V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. R esi st i ve Turn -o n Swi t ch i n g Times vs.
Gate Resistance
0
100
200
300
400
500
600
700
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
50
100
150
200
250
300
350
t d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= -100V
I
D
= -120A
I
D
= - 60A
Fi g. 16. R esi stive Tu r n-o ff Switchi n g Ti mes vs.
Jun ct i o n Temp er at u r e
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
140
160
180
200
220
240
260
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= -100V
I
D
= - 120A
I
D
= - 60A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
170
180
190
200
210
220
230
240
250
-120-110-100-90-80-70-60
I
D
- Amperes
t
f
- Nanoseconds
40
45
50
55
60
65
70
75
80
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= -100V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 13 . R esi s ti ve Turn -o n R i se Time vs.
Junction Temp eratu re
60
80
100
120
140
160
180
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= -100V
I
D
= - 60A
I
D
= -120A
Fi g . 18. R esisti ve Tur n -o ff Swi tchi n g Ti mes vs.
Gate Resi sta n c e
0
50
100
150
200
250
300
350
400
450
500
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
800
900
1000
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= -100V
I
D
= - 120A, - 60A
Downloaded from Elcodis.com electronic components distributor
IXTN120P20T
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_120P20T(A9) 10-25-11
Fig. 19. Maxim um T ransient T herm al Impedance
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Downloaded from Elcodis.com electronic components distributor
