FCA20N60_F109 - Fairchild Semiconductor

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET

SuperFETTM

December 2008

FCH20N60 / FCA20N60 / FCA20N60_F109

600V N-Channel MOSFET

Features

• 650V @TJ = 150°C

• Typ. Rds(on)=0.15Ω

• Ultra low gate charge (typ. Qg=55nC)

• Low effective output capacitance (typ. Coss.eff=110pF)

• 100% avalanche tested

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

Absolute Maximum Ratings

Thermal Characteristics

TO-247

FCH Series GSD

TO-3PN

FCA Series

Symbol Parameter FCH20N60 FCA20N60 Unit

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 20

12.5 A

IDM Drain Current - Pulsed (Note 1) 60 A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ

IAR Avalanche Current (Note 1) 20 A

EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C)

- Derate above 25°C208

1.67 W

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 °C

Symbol Parameter Typ. Max. Unit

RθJC Thermal Resistance, Junction-to-Case -- 0.6 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.24 --

RθJA Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W

•RoHS Compliant

2www.fairchildsemi.com

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FCH20N60 FCH20N60 TO-247 - - 30

FCA20N60 FCA20N60 TO-3PN - - 30

FCA20N60 FCA20N60_F109 TO-3PN - - 30

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V

VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250µA, Referenced to 25°C--0.6--V/°C

BVDS Drain-Source Avalanche Breakdown

Voltage VGS = 0V, ID = 20A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

VDS = 480V, TC = 125°C--

-- --

-- 1

10 µA

µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V

RDS(on) Static Drain-Source

On-Resistance VGS = 10V, ID = 10A -- 0.15 0.19 Ω

gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 17 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,

f = 1.0MHz -- 2370 3080 pF

Coss Output Capacitance -- 1280 1665 pF

Crss Reverse Transfer Capacitance -- 95 -- pF

Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF

Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300V, ID = 20A

RG = 25Ω

(Note 4, 5)

-- 62 135 ns

trTurn-On Rise Time -- 140 290 ns

td(off) Turn-Off Delay Time -- 230 470 ns

tfTurn-Off Fall Time -- 65 140 ns

QgTotal Gate Charge VDS = 480V, ID = 20A

VGS = 10V

(Note 4, 5)

-- 75 98 nC

Qgs Gate-Source Charge -- 13.5 18 nC

Qgd Gate-Drain Charge -- 36 - - nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 20 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 20A

dIF/dt =100A/µs (Note 4) -- 530 -- ns

Qrr Reverse Recovery Charge -- 10.5 -- µC

3www.fairchildsemi.com

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

100

101

102

V GS

Top : 1 5 .0 V

10 .0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

* Notes :

1. 250µs Pulse Test

2. TC = 25oC

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

100

101

102

-55oC

25oC

* Note

1. VDS = 40V

2. 250 µs Pulse Test

150oC

ID , Drain Current [A ]

VGS , Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

0.0

0.1

0.2

0.3

0.4

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Dr ain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100

101

102

25oC

150oC

* Notes :

1. VGS = 0V

2. 25 0 µs Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Volta ge [V]

10-1 100101

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

* Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 1020304050607080

VDS = 250V

VDS = 10 0V

VDS = 400V

* Note : ID = 20A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

4www.fairchildsemi.com

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* No tes :

1. VGS = 0 V

2. ID = 250 µA

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Tem perature [oC] -100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. VGS = 10 V

2. ID = 20 A

RDS(ON), (Normalized)

Drain-Source On-Resistanc e

TJ, Junction Temperature [oC]

100101102103

10-2

10-1

100

101

102Operation in This Area

is Limited by R DS(on)

DC 10 ms

1 ms100 us

* Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single P ulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

ID, Drain Curr ent [A]

TC, Case Temperature [oC]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

* N otes :

1 . Z θJC(t) = 0 .6oC/W Max.

2 . Du ty Fa c to r, D= t1/t2

3 . T JM - T C = PDM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Thermal Response

t1, Square Wave Pulse D uration [sec]

PDM

5www.fairchildsemi.com

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

6www.fairchildsemi.com

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

7www.fairchildsemi.com

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET

Mechanical Dimensions

TO-247AD (FKS PKG CODE 001)

Dimensions in Millimeters

8www.fairchildsemi.com

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET

Mechanical Dimensions

Dimensions in Millimeters

TO-3PN

Rev. I37

TRADEMARKS

The following includes registe red and unregistered tr ademarks and service marks, owned by Fairchild Semiconductor and/or its global sub sidiaries, and is not

intended to be an exhaustive list of all such trademarks.

* EZSWITCH™ and FlashWriter® are trademarks of System General Corporatio n, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used he r ein:

1. Life support devices or systems are devices or systems which, (a) are

intended for sur gical implant i nto t he body or (b ) support or sustai n life,

and (c) whose fai lure to perform when properly u sed in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of t he user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasona bly expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSWITCH™ *

™

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FlashWriter® *

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™ ®

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fair child Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete Not In Produ ctio n Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,

www.fairchildsemi.com, under Sales Support.

Counterfeiting of se miconductor parts is a growing problem in the industry. A ll manufactures of semico nductor products are e xperiencing count erfeiting of their

parts. Customers who inadvertent ly pur chase count erfeit parts expe rience many pro blems such as loss of bra nd reput ation, substa ndar d per formance, fa iled

application, and increased cost of production and manuf acturing delays. Fairchild is t aking strong measures to protect ourselves and our customers from the

proliferation of coun terfeit p arts. Farichi ld strongly enco urages cu stomers t o purchase Farich ild parts either dire ctly from Fairchil d or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is

committed to combat this global problem and encourage our customer s to do their pa rt in stopping this practice by b uying direct or from authorized d istributors.

10 www.fairchildsemi.com

FCH20N60 / FCA20N60 / FCA20N60_F109 Rev. A4

FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET