DATA SH EET
Product specification
Supersedes data of 1999 Apr 19 2001 Oct 10
DISCRETE SEMICONDUCTORS
BCX54; BCX55; BCX56
NPN medium power transistors
o
ok, halfpage
M3D109
2001 Oct 10 2
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
•Driver stages of audio and video amplifiers.
DESCRIPTION
NPN medium power transistor in a SOT89 plastic
package. PNP complements: BCX51, BCX52 and BCX53.
MARKING
PINNING
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
BCX54 BA BCX55-16 BM
BCX54-10 BC BCX56 BH
BCX54-16 BD BCX56-10 BK
BCX55 BE BCX56-16 BL
BCX55-10 BG
PIN DESCRIPTION
1 emitter
2 collector
3 base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
123
Bottom view
MAM296
3
2
1
2001 Oct 10 3
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BCX54 −45 V
BCX55 −60 V
BCX56 −100 V
VCEO collector-emitter voltage open base
BCX54 −45 V
BCX55 −60 V
BCX56 −80 V
VEBO emitter-base voltage open collector −5V
I
Ccollector current (DC) −1A
I
CM peak collector current −1.5 A
IBM peak base current −0.2 A
Ptot total power dissipation Tamb ≤25 °C; note 1 −1.3 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 94 K/W
Rth j-s thermal resistance from junction to soldering point 14 K/W
2001 Oct 10 4
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =30V −−100 nA
IE= 0; VCB = 30 V; Tj= 125 °C−−10 µA
IEBO emitter cut-off current IC= 0; VEB =5V −−100 nA
hFE DC current gain VCE = 2 V; (see Fig.2)
IC= 5 mA 63 −−
I
C
= 150 mA 63 −250
IC= 500 mA 40 −−
DC current gain IC= 150 mA; VCE = 2 V; (see Fig.2)
BCX54-10; 55-10; 56-10 63 −160
BCX54-16; 55-16; 56-16 100 −250
VCEsat collector-emitter saturation
voltage IC= 500 mA; IB=50mA −−0.5 V
VBE base-emitter voltage IC= 500 mA; VCE =2V −−1V
f
Ttransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz −130 −MHz
DC current gain ratio of the
complementary pairs IC= 150 mA; VCE=2V −1.3 1.6
hFE1
hFE2
-----------
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH729
10−1
hFE
1IC (mA)
10 103
102
VCE = 2 V
2001 Oct 10 5
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 97-02-28
99-09-13
wM
e1
e
EHE
B
0 2 4 mm
scale
b3
b2
b1
c
D
L
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
HE
4.25
3.75
e
3.0
w
0.13
e1
1.5
L
min.
0.8
b2
b1
0.53
0.40
b3
1.8
1.4
2001 Oct 10 6
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyoftheseproducts,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 10 7
Philips Semiconductors Product specification
NPN medium power transistors BCX54; BCX55; BCX56
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/04/pp8 Date of release: 2001 Oct 10 Document order number: 9397 750 08744
