2Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage ID = 1 mA, VGS = 0 V 900 V
IDSS Zero gate voltage drain
current
VGS = 0 V, VDS = 900 V 1 µA
VGS = 0 V, VDS = 900 V, TC = 125 °C (1) 50 μA
IGSS Gate body leakage
current VDS = 0 V, VGS = ±20 V ±10 μA
VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V
RDS(on) Static drain-source on
resistance VGS = 10 V, ID = 1.5 A 3.6 4.8 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 V -
590
- pF
Coss Output capacitance 63
Crss Reverse transfer
capacitance 13
Coss eq. (1) Equivalent output
capacitance VDS = 0 to 720 V, VGS = 0 V - 35 - pF
QgTotal gate charge VDD = 720 V, ID = 3 A, VGS = 0 to 10 V
(see Figure 16. Test circuit for gate charge
behavior)
-
22.7
- nC
Qgs Gate-source charge 4.2
Qgd Gate-drain charge 12
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 450 V, ID = 1.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15. Test circuit for resistive load
switching times and Figure 20. Switching
time waveform)
-
18
- ns
trRise time 7
td(off) Turn-off delay time 45
tfFall time 18
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical characteristics
DS2980 - Rev 3 page 3/24