ELM7179-4PS C-Band Internally Matched FET FEATURES DESCRIPTION High Output Power: P1dB=36.0dBm (Typ.) High Gain: G1dB=10.5dB (Typ.) High PAE: add=35% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications The ELM7179-4PS is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain. ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg-C) Item Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V Total Power Dissipation PT 27.3 W Storage Temperature TSTG -40 to +125 deg-C Channel Temperature TCH 175 deg-C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg-C) Item Symbol Condition Limit Unit <10 V DC Input Voltage VDS Forward Gate Current IGF RG=100 ohm <+16 mA Reverse Gate Current IGR RG=100 ohm >-2.2 mA Channel Temperature TCH 155 deg-C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg-C) Item 1 Symbol Condition Limit Min. Typ. Max. Unit Drain Current IDSS VDS=5V, VGS=0V - 1700 2600 mA Trans conductance gm VDS=5V, IDS=1100mA - 1700 - mS Pinch-off Voltage VP VDS=5V, IDS=85mA -0.5 -1.5 -3.0 V IGS=85uA -5.0 - - V 35.0 36.0 - dBm 9.0 10.5 - dB - 1100 1300 mA - 35 - % - - 1.2 dB -40 -43 - dBc Gage-Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Idsr Power Added Efficiency add Gain Flatness G VDS=10V IDS(DC)=0.65IDSS(typ.) f=7.1~7.9 GHz 3rd Order Inter Modulation Distortion IM3 f=7.9GHz f=10MHz, 2-tone Test Pout=25.5dBm (S.C.L) Rth Rth Channel to Case - 4.5 5.5 Deg-C/W Tch Tch 10V x Idsr x Rth - - 71.5 Deg-C ELM7179-4PS C-Band Internally Matched FET CASE STYLE: I2C ESD Class 3 A 4000-8000V MSL 2A 4 weeks after open the package Ordering Information Model Type MOQ MOU Packing Style ELM7179-4PS 15pcs 15pcs 15pcs Tray ELM7179-4PST 500pcs 500pcs 24mm width Tape (500pcs/Reel) *MOQ stands for Minimum Order Quantity. *MOU stands for Minimum Order Unit size. Note This device will not be delivered with test data but tested pass/fail 100% against DC and RF specifications. 2 NO liquid cleaning process is suitable for this device. (including de-ionized water or solvent) ELM7179-4PS C-Band Internally Matched FET RF Characteristics Input Power vs. Output Power, Power Added Efficiency VDS=10V, IDS(DC)=1100mA 30 25 Output Power [dBm] Total Power Dissipation (W) Power Derating Curve 20 15 10 5 0 0 50 100 150 200 38 60 36 50 34 40 32 30 30 20 28 10 26 0 17 19 Case Temperature (oC) 7.1 GHz Output Power vs. Frequency VDS=10V, IDS(DC)=1100mA 7.5 GHz 7.9 GHz -30 -35 36 -40 34 IM3 -45 IMD [dBc] Output Power [dBm] 29 IMD vs. Output Power VDS=10V, IDS(DC)=1100mA 38 32 -50 -55 30 IM5 -60 28 -65 26 -70 6.9 7.1 7.3 7.5 7.7 7.9 8.1 16 18 Frequency [GHz] 18 dBm 24 dBm P1dB 3 21 23 25 27 Input Power [dBm] Power Added Efficiency [%] 20 dBm 26 dBm 22 dBm 28 dBm 7.1 GHz 20 22 24 26 28 30 Output Power [dBm] S.C.L. 7.5 GHz 7.9 GHz ELM7179-4PS C-Band Internally Matched FET 36 50 34 40 32 30 30 20 28 10 26 0 17 19 8V 21 23 25 27 Input Power [dBm] 9V 29 10V 36 50 34 40 32 30 30 20 28 10 26 0 8V 4 9V 29 10V Power Added Efficiency [%] Output Power [dBm] 60 21 23 25 27 Input Power [dBm] 36 50 34 40 32 30 30 20 28 10 26 0 19 8V 38 19 60 17 Input Power vs. Output Power, Power Added Efficiency by Drain Voltage IDS(DC)=1100mA @7.9GHz 17 38 21 23 25 27 Input Power [dBm] 9V 29 10V Power Added Efficiency [%] 60 Output Power [dBm] 38 Input Power vs. Output Power, Power Added Efficiency by Drain Voltage IDS(DC)=1100mA @7.5GHz Power Added Efficiency [%] Output Power [dBm] Input Power vs. Output Power, Power Added Efficiency by Drain Voltage IDS(DC)=1100mA @7.1GHz ELM7179-4PS C-Band Internally Matched FET 36 50 34 40 32 30 30 20 28 10 26 0 17 19 700mA 21 23 25 27 Input Power [dBm] 900mA 29 1100mA 60 36 50 34 40 32 30 30 20 28 10 26 0 700mA 5 36 50 34 40 32 30 30 20 28 10 26 0 21 23 25 27 Input Power [dBm] 29 900mA 1100mA 19 700mA Power Added Efficiency [%] Output Power [dBm] 38 19 60 17 Input Power vs. Output Power, Power Added Efficiency by Quiescent Drain Current VDS=10V @7.9GHz 17 38 21 23 25 27 Input Power [dBm] 29 900mA 1100mA Power Added Efficiency [%] 60 Output Power [dBm] 38 Input Power vs. Output Power, Power Added Efficiency by Quiescent Drain Current VDS=10V @7.5GHz Power Added Efficiency [%] Output Power [dBm] Input Power vs. Output Power, Power Added Efficiency by Quiescent Drain Current VDS=10V @7.1GHz ELM7179-4PS C-Band Internally Matched FET 36 50 34 40 32 30 30 20 28 10 26 0 17 19 21 23 25 27 Input Power [dBm] Tc=-40deg-C Tc=80deg-C 29 Tc=20deg-C 36 50 34 40 32 30 30 20 28 10 26 0 Tc=-40deg-C Tc=80deg-C 6 29 Tc=20deg-C Power Added Efficiency [%] Output Power [dBm] 60 21 23 25 27 Input Power [dBm] 36 50 34 40 32 30 30 20 28 10 26 0 19 21 23 25 27 Input Power [dBm] Tc=-40deg-C Tc=80deg-C 38 19 60 17 Input Power vs. Output Power, Power Added Efficiency by Temperature VDS=10V @7.9GHz 17 38 29 Tc=20deg-C Power Added Efficiency [%] 60 Output Power [dBm] 38 Input Power vs. Output Power, Power Added Efficiency by Temperature VDS=10V @7.5GHz Power Added Efficiency [%] Output Power [dBm] Input Power vs. Output Power, Power Added Efficiency by Temperature VDS=10V @7.1GHz ELM7179-4PS C-Band Internally Matched FET IMD Performance vs. Output Power by Drain Voltage IDS(DC)=1100mA @7.1GHz -30 -30 -35 -35 -40 -40 IM3 IM3 IMD [dBc] -45 IMD [dBc] -45 -50 -50 -55 -55 IM5 -60 -65 -70 -70 18 20 22 24 26 28 30 Output Power [dBm] S.C.L. 8V 9V 10V IMD Performance vs. Output Power by Drain Voltage IDS(DC)=1100mA @7.9GHz -30 -35 -40 IM3 IMD [dBc] -45 -50 -55 IM5 -60 -65 -70 16 18 8V 20 22 24 26 28 30 Output Power [dBm] S.C.L. 9V IM5 -60 -65 16 7 IMD Performance vs. Output Power by Drain Voltage IDS(DC)=1100mA @7.5GHz 10V 16 18 8V 20 22 24 26 28 30 Output Power [dBm] S.C.L. 9V 10V ELM7179-4PS C-Band Internally Matched FET IMD Performance vs. Output Power by Quiescent Drain Current VDS=10V @7.1GHz -30 -30 -35 -35 -40 -40 IM3 IM3 IMD [dBc] -45 IMD [dBc] -45 -50 -50 -55 -55 IM5 -60 IM5 -60 -65 -65 -70 -70 16 18 700mA 20 22 24 26 28 30 Output Power [dBm] S.C.L. 900mA 1100mA IMD Performance vs. Output Power by Quiescent Drain Current VDS=10V @7.9GHz -30 -35 -40 IM3 IMD [dBc] -45 -50 -55 IM5 -60 -65 -70 16 18 700mA 8 IMD Performance vs. Output Power by Quiescent Drain Current VDS=10V @7.5GHz 20 22 24 26 28 30 Output Power [dBm] S.C.L. 900mA 1100mA 16 18 700mA 20 22 24 26 28 30 Output Power [dBm] S.C.L. 900mA 1100mA ELM7179-4PS C-Band Internally Matched FET IMD Performance vs. Output Power by Temperature VDS=10V @7.1GHz -30 -30 -35 -35 -40 -40 IM3 IM3 -45 IMD [dBc] IMD [dBc] -45 -50 -50 -55 -55 IM5 -60 -65 -70 -70 18 20 22 24 26 28 30 Output Power [dBm] S.C.L. Tc=-40deg-C Tc=80deg-C Tc=20deg-C IMD Performance vs. Output Power by Temperature VDS=10V @7.9GHz -30 -35 -40 IM3 IMD [dBc] -45 -50 -55 IM5 -60 -65 -70 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L. Tc=-40deg-C Tc=80deg-C Tc=20deg-C IM5 -60 -65 16 9 IMD Performance vs. Output Power by Temperature VDS=10V @7.5GHz 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L. Tc=-40deg-C Tc=80deg-C Tc=20deg-C ELM7179-4PS C-Band Internally Matched FET S-Parameter +90 +50j +100j +25j 10 +250j 0 Scale for |S21| 2 180 0 -250j -10j -25j -100j S11 -50j Frequency (MHz) - Scale for |S12| +10j S21 S12 S22 S11 S21 S12 MAG ANG MAG ANG MAG 6900 0.689 173.1 3.012 -36.9 0.043 7000 0.678 162.1 3.041 -49.1 7100 0.662 151.1 3.081 7200 0.644 140.3 7300 0.621 7400 S22 MAG ANG 54.0 0.593 -168.4 0.040 41.5 0.592 179.9 -60.8 0.038 29.3 0.597 169.4 3.176 -72.3 0.035 16.3 0.597 159.5 129.4 3.316 -84.2 0.033 2.5 0.596 150.1 0.589 117.5 3.448 -96.5 0.030 -13.4 0.589 140.3 7500 0.552 104.0 3.614 -109.7 0.028 -31.1 0.575 130.7 7600 0.506 87.9 3.820 -123.9 0.027 -53.2 0.553 120.0 7700 0.450 68.4 4.038 -139.0 0.025 -80.7 0.519 108.4 7800 0.389 43.5 4.204 -155.2 0.023 -112.7 0.466 96.6 7900 0.344 11.5 4.311 -173.0 0.022 -145.5 0.398 83.2 8000 0.341 -24.7 4.336 168.5 0.023 -177.0 0.314 67.5 8100 0.380 -58.8 4.212 149.9 0.026 152.6 0.217 50.4 Gate ANG Drain S-Parameter Reference Plane 10 ELM7179-4PS C-Band Internally Matched FET Package Outline 4 3 2 5 1 6 7 Co Planarity Pin 1 : 2 : 3 : 4 : 5 : 6 : 7 : 11 Assignments NC Gate NC NC Drain NC Source ELM7179-4PS C-Band Internally Matched FET 12 PCB Pads and Solder-Resist Pattern ELM7179-4PS C-Band Internally Matched FET 13 Marking and Tape/Reel Configuration ELM7179-4PS C-Band Internally Matched FET Mounting Instructions for Package for Lead-free solder Mounting Condition 1. 2. 3. For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used. The example solder is a tin-rich alloy with 3.0% silver and 0.5% copper, often called Sn 96 for its approximate Tin content. A rosin type flux with chlorine content of 0.2% or less shall be used. The rosin flux with low halogen content is recommended. When soldering, use the following time/ temperature profile with any of the methods listed for acceptable solder joints. Make sure the devices have been properly prepared with flux prior soldering. *Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow); Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process. Excessive reflow will effect the resin resulting in a potential failure or latent defect. The recommended reflow temperature profile is shown below. The temperature of the reflow profile must be measured at the device lead. Reflow temperature profile and condition: Temperature (deg-C) 260 250 220 200 140 (2) RT (1) (4) (3) Time (1). Temperature rise: 3 deg-C/seconds. (2). Preheating: 150 - 200 deg-C, 60 - 180seconds. (3). Main heating: 220 deg-C, 60 seconds max. (4). Main heating: 260 deg-C max., more than 250 deg-C, 20 - 40 seconds max. * Measurement point: Device Heat-sink (Source Pin). 1. The above-recommended conditions were confirmed using the manufacturer's equipment and materials. However, when soldering these products, the soldering condition should be verified by customer using their own particular equipment and materials. Cleaning Avoid washing of the device after soldering by reflow method due to the risk of liquid absorption by the resin used in this part. 14 ELM7179-4PS C-Band Internally Matched FET Humidity Lifetime for ELMxxxx-4PST The following graph shows the effect of moisture on lifetime (moisture resistance) for the ELMxxxx-4PST. Each graph indicates the MTTF and failure rate prediction (Confidential Level = 90 %) which calculated from the results of highly accelerated temperature and humidity stress test (HAST). Representative of device type: ELM7179-4PST Subject of device type : ELMxxxx-4PST Field environmental conditions for operation If the ELMxxxx-4PST is installed in a non-hermetic environment, please refer to the following recommendations and notes for design with, and assembly and use of our products. Note 1. When drain current cuts off, it should be cut off by drain bias, and not cut off by gate bias only. The humidity lifetime becomes shorter in case of the gate-only cut off operation due to electric field strength interacting with humidity. Note 2. ELMxxxx-4PST should be used under the environment conditions of no dew condensation. These plots do not apply in the case of liquid absorbed into the resin, whether applied to the part in assembly or as condensate in the application. 1.E+10 1.E+09 1.E+08 60% 1.E+07 70% 80% 90% 1.E+06 10 years Relative Humidity 1.E+08 50% 50% 60% 70% 1.E+07 80% 90% 1.E+06 1.E+05 1.E+05 1.E+04 1.E+04 1.E+03 1.E+03 0 10 20 30 40 50 60 70 80 Typical Ambient Temperature (deg.C) 15 1.E+09 Relative Humidity MTTF (hours) Time To Failure at Failure Rate of 0.1%(hours) 1.E+10 90 100 0 10 20 30 40 50 60 70 80 Typical Ambient Temperature (deg.C) 90 100 ELM7179-4PS C-Band Internally Matched FET For further information please contact: Sumitomo Electric Device Innovations, U.S.A., Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 Sumitomo Electric Europe Ltd. 220 Centennial Park Elstree WD6 SL United Kingdom TEL: +44 (0)20 8953-8118 FAX: +44 (0)20 8953-8228 Sumitomo Electric Europe Ltd. (Italy Branch) Piazza Don E. Maoelli, 60 - 20099 Sesto San Giovanni, Milano, Italy TEL: +39-02-4963 8601 FAX: +39-02-4963 8625 Sumitomo Electric Asia, Ltd. Room 2624-2637, 26/F., Sun Hung Kai Centre, 30 Harbour Road, Whanchai, Hong Kong TEL: +852-2576-0080 FAX: +852-2576-6412 Sumitomo Electric Device Innovations, Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sumitomo Electric Industries, Ltd. Head Office(Tokyo) 3-9-1, Shibaura, Minato-ku Tokyo 108-8539, Japan TEL +81-3-6722-3283 FAX +81-3-6722-3284 16 CAUTION Sumitomo Electric Device Innovations, Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Sumitomo Electric Device Innovations, Inc. reserves the right to change products and Specifications without notice. The information does not convey any license under rights of Sumitomo Electric Device Innovations, Inc. or others. (c) 2010 Sumitomo Electric Device Innovation, Inc.