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FQP2N60C / FQPF2N60C N-Channel QFET(R) MOSFET 600 V, 2 A, 4.7 Description Features * 2 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 1 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * Low Gate Charge (Typ. 8.5 nC) * Low Crss (Typ. 4.3 pF) * 100% Avalanche Tested D G D S G G D S TO-220 TO-220F S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQP2N60C - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD TJ, TSTG TL FQPF2N60C Unit V 2.0 2.0 * A 1.35 1.35 * A 8* A 600 - Pulsed (Note 1) 8 30 V (Note 2) 120 mJ Avalanche Current (Note 1) 2.0 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 5.4 4.5 -55 to +150 mJ V/ns W W/C C 300 C (Note 3) 54 0.43 - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds 23 0.18 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case, Max. RCS Thermal Resistance, Case-to-Sink Typ, Max. RJA Thermal Resistance, Junction-to-Ambient, Max. (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 FQP2N60C 2.32 1 FQPF2N60C 5.5 Unit C/W 0.5 -- C/W 62.5 62.5 C/W www.fairchildsemi.com FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET December 2013 Part Number FQP2N60C Top Mark FQP2N60C Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FQPF2N60C FQPF2N60C TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25C unless otherwise noted. Parameter Off Characteristics Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS Zero Gate Voltage Drain Current Min. Typ. Max. Unit 600 -- -- V -- 0.6 -- V/C VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A rDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1 A -- 3.6 4.7 gFS Forward Transconductance VDS = 40 V, ID = 1 A -- 5.0 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 180 235 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 20 25 pF -- 4.3 5.6 pF -- 9 28 ns -- 25 60 ns -- 24 58 ns -- 28 66 ns -- 8.5 12 nC -- 1.3 -- nC -- 4.1 -- nC A Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 2 A, RG = 25 (Note 4) VDS = 480 V, ID = 2 A, VGS = 10 V (Note 4) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2 ISM -- -- 8 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 230 -- ns Qrr Reverse Recovery Charge -- 1.0 -- C VGS = 0 V, IS = 2 A, dIF / dt = 100 A/s Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 56 mH, IAS = 2 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 2 A, di/dt 200 A/s , VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 2 www.fairchildsemi.com FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : -1 10 o 150 C o -55 C 0 10 o 25 C Notes : 1. 250us Pulse Test o 2. TC = 25 C Notes : 1. VDS = 40V 2. 250us Pulse Test -2 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 IDR, Reverse Drain Current [A] rDS(ON) [Ohm], Drain-Source On-Resistance 12 VGS = 10V 8 6 4 VGS = 20V 2 o Note : TJ = 25 C 0 0 10 o 150 C 2. 250us Pulse Test -1 0 2 1 3 4 10 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 500 12 Ciss = Cgs + Cgd (Cds = shorted) 450 Coss = Cds + Cgd 350 VGS, Gate-Source Voltage [V] Crss = Cgd 400 Capacitances [pF] Notes : 1. VGS = 0V o 25 C Ciss 300 Coss 250 200 Note ; 1. VGS = 0 V 150 2. f = 1 MHz 100 Crss 50 VDS = 120V 10 VDS = 300V 8 VDS = 480V 6 4 2 Note : ID = 2A 0 -1 10 0 10 0 1 10 0 2 4 6 8 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 3 10 www.fairchildsemi.com FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET ! (Continued) 3.0 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2.5 rDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 uA 2.0 1.5 1.0 ? Notes : 1. VGS = 10 V 0.5 2. ID = 1 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 o TJ, Junction Temperature [ C] 50 100 Operation in This Area is Limited by R DS(on) 1 100 s DC 1 ms 10 ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 100 s 0 -1 10 Notes : o 1. TC = 25 C 1 ms 0 10 DC 10 ms 100 ms -1 10 Notes : o 1. TC = 25 C o o 2. TJ = 150 C 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 -2 10 200 Figure 8. On-Resistance Variation vs Temperature 10 10 150 o Operation in This Area is Limited by R DS(on) 1 0 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 10 -50 0 1 10 2 10 10 3 10 10 VDS, Drain-Source Voltage [V] 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP2N60C Figure 9-2. Maximum Safe Operating Area for FQPF2N60C 2.4 ID, Drain Current [A] 2.0 1.6 1.2 0.8 0.4 0.0 25 50 75 100 125 150 o TC, Case Temperature [ C] Figure 10. Maximum Drain Current vs Case Temperature (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 4 www.fairchildsemi.com FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET Typical Characteristics ZJC(t), Thermal Response [oC/W] (Continued) D = 0 .5 0 10 N o te s : 1 . Z JC ( t) = 2 .3 2 0 .2 o C /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T JM - T C = P D M * Z JC ( t) 0 .1 PDM 0 .0 5 10 FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET Typical Characteristics -1 t1 0 .0 2 0 .0 1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] ZJC(t), Thermal Response [oC/W] Figure 11-1. Transient Thermal Response Curve for FQP2N60C D = 0 .5 10 0 .2 0 N o te s : 1 . Z JC ( t) = 5 .5 0 .1 PDM 0 .0 2 0 .0 1 -1 C /W M a x . 3 . T JM - T C = P D M * Z JC ( t) 0 .0 5 10 o 2 . D u t y F a c t o r , D = t 1 /t 2 t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF2N60C (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 5 www.fairchildsemi.com FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET 200nF 12V VGS Same Type as DUT 50K Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 6 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 7 www.fairchildsemi.com FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET DUT FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 8 www.fairchildsemi.com FQP2N60C / FQPF2N60C -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 (c)2003 Fairchild Semiconductor Corporation FQP2N60C / FQPF2N60C Rev. C1 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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