CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
I
RRM
A
0.95
0.92
1.02
0.98
0.1
5
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1308065 Version: I13
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-220AB
Polarity: As marked
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
MBR
2535
CT
MBR
2545
CT
MBR
2550
CT
MBR
2560
CT
MBR
2590
CT
TO-220AB
MBR
25100
CT
MBR
25150
CT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL
Maximum DC blocking voltage
Maximum average forward rectified current 25
Peak repetitive forward current
(Rated VR, square wave, 20KHz) I
FRM
25 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
200 A
Peak repetitive reverse surge current (Note 1) 1 0.5
0.75
0.82
Maximum instantaneous forward voltage (Note 2)
I
F
=12.5A, T
J
=25℃
I
F
=12.5A, T
J
=125℃
I
F
=25A, T
J
=25℃
I
F
=25A, T
J
=125℃
V
F
-0.92
0.73 - 0.88
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
V
- 0.75 0.85
-0.65
Storage temperature range - 55 to +150
mA
15 10
Voltage rate of change (Rated V
R
)10000
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
0.2 0.2 0.1
7.5
1.0Typical thermal resistance
Operating junction temperature range - 55 to +150
PART NO.
PART NO.
MBR2560CT
MBR2560CT
MBR2560CT
(TA=25℃ unless otherwise noted)
Document Number: DS_D1308065 Version: I13
Note 1: "xx" defines voltage from 35V (MBR2535CT) to 150V (MBR25150CT)
50 / Tube
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE PACKAGE PACKING
Green compound
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
MBR2560CT C0 C0
MBR2560CT C0G C0
MBR25xxCT
(Note 1) Prefix "H" C0 Suffix "G" TO-220AB
MBR2560CTHC0 H C0
G
0
5
10
15
20
25
30
0 50 100 150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1- FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
100
125
150
175
200
225
250
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125℃
TJ=25℃
MBR2535CT-MBR2545CT
MBR2550CT-MBR25150CT
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3- TYPICAL INSTATANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ=125℃
Pulse Width=300μs
1% Duty Cycle
TJ=25℃
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2590CT-MBR25150CT
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
P/N = Marking Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1308065 Version: I13
MARKING DIAGRAM
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG
f=1.0MHz
Vsig=50mVp-p
MBR2535CT-MBR2545CT
MBR2550CT-MBR25150CT
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION(sec)
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308065 Version: I13
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Taiwan Semiconductor:
MBR2535CT MBR2550CT MBR2545CT MBR2560CT MBR25100CT MBR25150CT MBR2590CT
MBR2550CTHC0 MBR2545CT C0 MBR25100CTHC0 MBR2535CTHC0 MBR2545CTHC0 MBR2560CTHC0
MBR25150CTHC0 MBR2590CTHC0
