BSS806NE OptiMOSTM2 Small-Signal-Transistor Product Summary Features VDS * N-channel RDS(on),max * Enhancement mode * Ultra Logic level (1.8V rated) 20 V VGS=2.5 V 57 mW VGS=1.8 V 82 ID 2.3 A * ESD protected * Avalanche rated * Qualified according to AEC Q101 PG-SOT23 * 100% lead-free; RoHS compliant 3 * Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Marking Halogen Free Packing BSS806NE SOT23 H6327: 3000 pcs/ reel YIs Yes Non dry Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 C 2.3 T A=70 C 1.9 Unit A Pulsed drain current I D,pulse T A=25 C 9.3 Avalanche energy, single pulse E AS I D=2.3 A, R GS=25 W 10.8 Reverse diode dv /dt dv /dt I D=2.3 A, V DS=16 V, di /dt =200 A/s, T j,max=150 C 6 kV/s Gate source voltage V GS 8 V Power dissipation1) P tot 0.5 W Operating and storage temperature T j, T stg -55 ... 150 C ESD Class T A=25 C JESD22-A114 -HBM Soldering Temperature 1C(1kV to 2kV) 260 C IEC climatic category; DIN IEC 68-1 Rev 2.01 mJ 55/150/56 page 1 2014-01-16 BSS806NE Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 A 20 - - Gate threshold voltage V GS(th) V DS=VGS , I D=11 A 0.3 0.55 0.75 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 C - - 1 V DS=20 V, V GS=0 V, T j=150 C - - 100 V mA Gate-source leakage current I GSS V GS=8 V, V DS=0 V - - 6 A Drain-source on-state resistance R DS(on) V GS=1.8 V, I D=1.3 A - 57 82 mW V GS=2.5 V, I D=2.3 A - 41 57 9 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.9 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB. Rev 2.01 page 2 2014-01-16 BSS806NE Parameter Values Symbol Conditions Unit min. typ. max. - 370 529 - 118 169 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 20 29 Turn-on delay time t d(on) - 7.5 - Rise time tr - 9.9 - Turn-off delay time t d(off) - 12.0 - Fall time tf - 3.7 - Gate to source charge Q gs - 0.55 - Gate to drain charge Q gd - 0.58 - Gate charge total Qg - 1.7 - Gate plateau voltage V plateau - 1.5 - V - - 0.5 A - - 9.3 - 0.82 1.1 V - 11 - ns - 3.3 - nC V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=2.5 V, I D=2.3A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=10 V, I D=2.3 A, V GS=0 to 2.5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.01 T A=25 C V GS=0 V, I F=2.3 A, T j=25 C V R=10 V, I F=2.3 A, di F/dt =100 A/s page 3 2014-01-16 BSS806NE 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS2.5 V 2.5 0.5 2.0 0.375 ID [A] Ptot [W] 1.5 0.25 1.0 0.125 0.5 0 0.0 0 40 80 120 160 0 20 40 60 TA [C] 80 100 120 140 160 TA [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 103 101 10 s 0.5 102 100 s 1 ms 0.2 10 ms 0.1 ID [A] ZthJA [K/W] 100 10-1 DC 0.05 101 0.02 0.01 single pulse 100 10-2 10-3 10-1 10-1 100 101 102 VDS [V] Rev 2.01 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2014-01-16 BSS806NE 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 4 120 1.3 V 2.5 V 1.8 V 1.4 V 1.6 V 100 1.5 V 1.6 V 3 RDS(on) [mW] 80 ID [A] 1.5 V 2 1.8 V 60 2V 1.4 V 40 1.3 V 20 2.5 V 1 1.2 V 0 1.1 V 0 0 0.0 0.4 0.8 1.2 1.6 VDS [V] 1 2.0 2 3 4 6 8 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C 4 20 16 3 gfs [S] ID [A] 12 2 8 150 C 25 C 1 4 0 0 0.0 0.5 1.0 1.5 2.0 VGS [V] Rev 2.01 0 2 4 ID [A] page 5 2014-01-16 BSS806NE 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=2.3 A; V GS=2.5 V V GS(th)=f(T j); V DS=VGS; I D=11 A parameter: I D 100 1.2 80 0.8 98 % 60 VGS(th) [V] RDS(on) [mW] 98 % typ 40 typ 0.4 2% 0 20 0 -0.4 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C I F=f(V SD) parameter: T j 103 101 Ciss 25 C 100 150 C, 98% IF [A] C [pF] Coss 102 10-1 150 C 25 C, 98% 10-2 Crss 101 10-3 0 5 10 15 20 VDS [V] Rev 2.01 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2014-01-16 BSS806NE 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=2.3 A pulsed parameter: T j(start) parameter: V DD 101 5 4.5 4 3.5 100 25 C VGS [V] IAV [A] 3 100 C 10 V 16 V 2.5 4V 2 125 C 10-1 100 101 102 1.5 103 1 0.5 0 0.0 0.5 tAV [s] 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 A 25 V GS 24 Qg 23 VBR(DSS) [V] 22 21 20 V gs(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [C] Rev 2.01 page 7 2014-01-16 BSS806NE SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.01 page 8 2014-01-16 BSS806NE Published by Infineon Technologies AG 81726 Munich, Germany (c) 2012 Infineon Technologies AG All Rights Reserved. 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