HM628512AI Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-791 (4) Preliminary Rev. 0.0 Jun, 20, L997 Description The Hitachi HM6285 12.40 is a 4-Mbit state RAM organized $12-kword &-bit. It realizes higher density, higher performance and low power comsumpoon by employing (1.3 pm Hi-CMOS process technology. The device, packaged m a 525-mil SOP (foot print pitch with) or 400-mil TSOP TYPE U or 600-mil plasne DIP, is available for high density mounting. L-version is suitable for battery backup system, Features Single 5 V supply: 5.0 V+ 10% Access time: 7085 ms (max) Power dissipation Active: 50 mWiMHe (typ) Standby: 10) ww (typ) * Completely static memory Noclock of timing sirobe required * Equal access and cycle times Common data input and output Three state output Directly TTL compatible All inputs and outputs Battery backup operation Operating temperature: AO to 3CHM628512AI Series Ordering Information Type No. Access time Package HM62851 2ALPI-7 70 ns 600-mil 32-pin plastic DIP (DP-32) HM628512ALPI-8 85 ns HM62851 2ALFPI-7 70 ns 525-mil 32-pin plastic SOP (FP-32D) HM628512ALFPI-8 85 ns HM62851 2ALTTI-7 70 ns 400-mil 32-pin plastic TSOP Il (TTP-32D) HM628512ALTTI-8 85 ns HM628512ALRRI-7 70 ns 400-mil 32-pin plastic TSOP Il reverse (TTP-32DR) HM628512ALRRI-8 85 ns Pin Arrangement HM628512ALPI Series HM62851 2ALTTI Series HM628512ALFPI Series Aisl__| 1 VY 32 [ ]Vec Aig 10 32 Veg Ai6C] 2 314A Aisl_ | 2 31[_ ]A15 Ai4c 3 30 2 At7 A14L_|3 30 [_ ]A17 Ae 4 29 |) WE _ 70 5 23 [| A13 Ai2l_|4 29 |_ |WE ABC 6 27 | as A7L_|5 28 | ]A13 AS 7 26 Ag 8 25 | Ait AcL_|6 27 |_]as A3C 9 24 FOE A5L_|7 26 [_ |a9 qe 10 23 |) A10 i 22 FCs me 8 25 = i= 42 21 4 07 aal_|9 24! 1OE I 13 20 [1/06 10 VO1C 14 19 F 1/05 A2L_| 23 [_ ]A10 VO2E] 15 18 04 AiL_]11 22[ |cs Veg] 16 17 Wos 12 Aol_| 21|_|vo7 (Top view) vooL_] 13 20 |_ |vos voiL_] 14 19 [_]vos HM628512ALRRI Series vo2[_] 15 18 |_]vo4 VeaL_]| 16 17_ ]vo3 Vog | 32 O1 ats SS AS CI 31 2 Hats ; A17 CF 30 3 )Al4 (Top view) WE CJ 29 4 |) aAi2 Ai3 [J 28 5 ) A7 A8& CJ 27 6 ) A6 Ag FJ 26 7 ) Ads Alt I 95 8 fA4 OE [] 24 9 FAs A10 C] 23 10) A2 CS 22 1 AI VO7 I 21 12 ) Ao /O6 CJ 20 13 00 /O5 J 19 145 VOI /04 CI] 18 15 fF 02 /O3 I 17 16 FA Veg (Top view) HITACHIHM628512AI Series Pin Description Pin name Function AO to A18 Address input O00 to VO7 Data input/output cs Chip select OE Output enable WE Write enable Veo Power supply V Ground n wn Block Diagram A12 o Vc A7 o Veg Al o | AO o_ | Ae ! Row : Memory matrix A5 o decoder . 1,024 x 4,096 AB o | A3 o_ | A4 o FF Aig o - /O0 > : Column I/O : Input Column decoder data control 07 SS ZN LA 4 A13 |A17A15A8AQA11A10A14A16 At Yd] Timing pulse generator cs o_ WE ] Read/Write control HITACHIHM628512AI Series Function Table WE cs OE Mode Vee current Dout pin Ref. cycle x H x Not selected Iss, lopt High-Z H L H Output disable loc High-Z H L L Read lec Dout Read cycle L L H Write lec Din Write cycle (1) L L L Write loc Din Write cycle (2) Note: x:HorL Absolute Maximum Ratings Parameter Symbol Value Unit Power supply voltage relative to Vc, Vec 0.5 to +7.0 Vv Terminal voltage on any pin relative toV.,, V; 0.5*" to Veg + 0.37 Vv Power dissipation P,. 1.0 W Operating temperature Topr 40 to +85 C Storage temperature Tstg 55 to +125 C Storage temperature under bias Tbias 40 to +85 C Notes: 1. 3.0 V for pulse half-width < 30 ns 2. Maximum voltage is 7.0 V Recommended DC Operating Conditions (Ta = 40 to +85C) Parameter Symbol Min Typ Unit Supply voltage Vee 4.5 5.0 Vv Ves 0 0 Vv Input high voltage Vin 2.4 Voc + 0.3 Vv Input low voltage Vie -0.3" V Note: 1. 3.0 V for pulse half-width < 30 ns HITACHIHM628512AI Series DC Characteristics (Ta = +40 to +85C, V..=5 V 10% , V,, =0 V) Parameter Symbol Min Typ* Max Unit Test conditions Input leakage current Hal - 1 HA Vin = Veg tO Voc Output leakage current hol 1 wA CS = V,, or OE = V,, or WE = Vib Vio = Vss to Voc Operating current lee 8 15 mA CS=V,, others = V/V), ly. =O MA Average operating current lees 45 70 mA Min cycle, duty = 100% CS = V,, others = V,/V,, lio =OMA loos 10 20 mA Cycle time = 1 us, duty = 100% _ li =OmA, CS <0.2V Vin 2 Veg - 0.2 V,V, $0.2 V Standby current Ise 1 3 mA CS=V,, Isp: 2 100 wA Vin=0V,CS2V,,-02V Output low voltage Vo - 0.4 Vv Ih, = 2.1 MA Output high voltage Vou 24 Vv log = 1.0 MA Notes: 1. Typical values are at V,, = 5.0 V, Ta = +25C and specified loading, and not guaranteed. Capacitance (Ta = 25C, f = 1 MHz) Parameter Symbol Typ Max Unit Test conditions Input capacitance*' Cin 8 pF Vin=O0V Input/output capacitance* Cy, 10 pF Vig = OV Note: 1. This parameter is sampled and not 100% tested. HITACHIHM628512AI Series AC Characteristics (Ta = 40 to +85C, V,. =5 V 10) Test Conditions Input pulse levels: 0.5 V to 2.5 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + C, (100 pF) (Including scope & jig) Read Cycle HM628512Al 7 -8 Parameter Symbol Min Max Min Max Unit Notes Read cycle time tac 70 85 ns Address access time tas 70 85 ns Chip select access time teo 70 85 ns Output enable to output valid toe 35 45 ns Chip select to output in low-Z ty 10 10 ns 2 Output enable to output in low-Z tow 5 5 ns 2 Chip deselect to output in high-Z tay 0 25 0 30 ns 1,2 Output disable to output in high-Z tonz 0 25 0 30 ns 1,2 Output hold from address change ton 10 10 ns 6 HITACHIHM628512AI Series Write Cycle HM628512Al 7 -8 Parameter Symbol Min Max Min Max Unit Notes Write cycle time twe 70 85 ns Chip select to end of write tow 60 75 ns Address setup time tas 0 0 ns Address valid to end of write taw 60 75 ns Write pulse width twe 50 55 ns 3,12 Write recovery time twa 0 0 ns 6 WE to output in high-Z twuz 4) 25 4) 30 ns 1,2,7 Data to write time overlap tow 30 35 ns Data hold from write time tox 0 0 ns Output active from output in high-Z tow 5 5 ns 2 Output disable to output in high-Z tonz 0 25 0 30 ns 1,2,7 Notes: 1. ty, toyz and ty, are defined as the time at which the outputs achieve the open circuit conditions wo NO oer 9. 10. 11. 12. and are not referred to output voltage levels. This parameter is sampled and not 100% tested. A write occurs during the overlap (typ) of a low CS and a low WE. A write begins at the later transition of CS going low or WE going low. A write ends at the earlier transition of CS going high or WE going high. typ is measured from the beginning of write to the end of write. toy is measured from CS going low to the end of write. tas is Measured from the address valid to the beginning of write. twa is measured from the earlier of WE or CS going high to the end of write cycle. During this period, I/O pins are in the output state so that the input signals of the opposite phase to the outputs must not be applied. If the CS low transition occurs simultaneously with the WE low transition or after the WE transition, the output remain in a high impedance state. Dout is the same phase of the write data of this write cycle. Dout is the read data of next address. If CS is low during this period, I/O pins are in the output state. Therefore, the input signals of the opposite phase to the outputs must not be applied to them. In the write cycle with OE low fixed, t,,. must satisfy the following equation to avoid a problem of data bus contention. typ > toy Min + ty4y, Max HITACHIHM628512AI Series Timing Waveforms Read Timing Waveform (WE = V,,) Lg tae Address x a tan tco Ct Vi CS \ . hz - . tuz ne toe toiz \C - /- OE \ _ tonz Dout Valid Data ton HITACHIHM628512AI Series Write Timing Waveform (1) (OE Clock) . twe | Address x ~ Taw le twr - OE / \ / I. tow / cS / *8 . tas ~ twe WE 4 t _ tonz Dout aN tow tb Din Y Valid Data HITACHIHM628512AI Series Write Timing Waveform (2) (OE Low Fixed) Address x _ tow | lwr os \ f *8 B Taw . twe a \ / ton WE _ tas \ 7 ~ twuz . ow *g *10 Dout 7 tow toy *414 Din Valid Data x 10 HITACHIHM628512AI Series Low V,. Data Retention Characteristics (Ta = 40 to +85C) Parameter Symbol Min Typ Max Unit Test conditions Voc for data retention Vora 2 - V CS 2V,, - 0.2 V, Vinz=0V Data retention current lecor 17 50*' A Voce = 3.0 V, Vin20V CS 2 Vo, - 0.2 V Chip deselect to data retention time tgp 0 _- ns See retention waveform Operation recovery time tp 5 _- ms Notes: 1. 20 yA (max) at Ta = 40 to 40C 2. CS controls address buffer, WE buffer, OE buffer, and Din buffer. In data retention mode, Vin levels (address, WE, OE, I/O) can be in the high impedance state. 3. Typical values are at V,, = 3.0 V, Ta = 25C and specified loading, and not guaranteed. Low V,, Data Retention Timing Waveform (CS Controlled) Data retention mode 11 HITACHIHM628512AI Series Package Dimensions HM628512ALPI Series (DP-32) Unit: mm 41.90 42.50 Max 32 17 COC) C1 6) C1 oc) fio) oo) oO) oo) oo) oo @ D 3 ais oO Woo oo ul a a 1.20 eo 2.30 Max s 15.24 \8 a Ja f : l< ; % _22 0.2570" . 2.54 + 0.25 0.48 + 0.10 | bw 0.257505 || rt oN 0 15 Hitachi Code DP-32 JEDEC Code EIAJ Code SC-613 Weight (reference value)} 5.19 12 HITACHIHM628512AI Series HM628512ALFPI Series (FP-32D) 20.45 20.95 Max D O - Dimension including the plating thickness Unit: mm 32 |Noonoonoonoonoon! 17 o 1 UUUUUUUUUUUUUUUU y6 a tolt 14.14 + 0.30 1.00 M = slo . ax oO|o ~~ 8 +/+ 1.42 se] NO AA | Slo , no f o _ 8 [S| 0.10 | s9 0.80+0.20 | || lo 0.40 + 0.08 AR 0.38 +0067 110.15 W _ Hitachi Code FP-32D JEDEC Code MO-099AB EIAJ Code _ Base material dimension Weight (reference value)|_1.3g HITACHI 13HM628512AI Series HM628512ALTTI Series (TTP-32D) Unit: mm 20.95 21.35 Max 32 1 DoOoonoonoonnooonn j Ke) 9 y Tocco Toocooo 1 16 0.42 + 0.08 _____ 0.404006 (10.21@ + ot te 1.15 Max 11.76 + 0.20 h y ' , $<,, J oly 0 5 0.50+0.10,| a o = |S] 0.10 | slg 3 S ++ 7 : nip = mT - WN TT ol ! [Hitachi Code TTP-32D JEDEC Code MO-133CA Dimension including the plating thickness EIAJ Code = Base material dimension Weight (reference value)|_ 0.51 g 14 HITACHIHM628512ALRRI Series (TTP-32DR) HM628512AI Series 20.95 21.35 Max 1 1 ooooooononnnnnnn 10.16 UUUUUODUDPUOUoeoUoe 17 32 1.27 0.42 + 0.08 &[0.210 0.40 + 0.06 it 1.15 Max 1.20 Max Dimension including the plating thickness Base material dimension 11.76 + 0.20 Unit: mm Lat P TF 0 5 0.50+0.10 0.17 + 0.05 0.125 + 0.04 0.13 + 0.05 Hitachi Code TTP-32DR JEDEC Code MO-133CA EIAJ Code Weight (reference value)|_ 0.51 g HITACHI 15HM628512AI Series Disclaimer When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2, All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachis permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4, Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachis semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachis products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachis sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachis products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Sales Offices HITACHI Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 16 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher StraBe 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Lid. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright Hitachi, Lid., 1997. All rights reserved. Printed in Japan. HITACHIHM628512AI Series Revision Record Rev. Date Contents of Modification Drawn by Approved by 0.0 Jun. 20, 1997 Initial issue 17 HITACHI