BCW68GE6327 - Infineon Technologies AG

2007-04-20

1

BCW67, BCW68

12

3

PNP Silicon AF Transistors

• For general AF applications

• High current gain

• Low collector-emitter saturation voltage

• Complementary types: BCW66... (NPN)

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCW67A

BCW67B

BCW67C

BCW68F

BCW68G

BCW68H

DAs

DBs

DCs

DFs

DGs

DHs

1=B

2=E

3=C

SOT23

1Pb-containing package may be available upon special request

2007-04-20

2

BCW67, BCW68

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BCW67

BCW68

VCEO

32

45

V

Collector-base voltage

BCW67

BCW68

VCBO

45

60

Emitter-base voltage VEBO 5

Collector current IC800 mA

Peak collector current ICM 1 A

Base current IB100 mA

Peak base current IBM 200

Total power dissipation, TS ≤ 79°C Ptot 330 mW

Junction temperature Tj150 °C

Storage temperature Tstg -65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) RthJS ≤ 215 K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

2007-04-20

3

BCW67, BCW68

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCW67

IC = 10 mA, IB = 0 , BCW68

V(BR)CEO

32

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BCW67

IC = 10 µA, IE = 0 , BCW68

V(BR)CBO

45

60

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0 V(BR)EBO 5 - -

Collector-base cutoff current

VCB = 32 V, IE = 0

VCB = 45 V, IE = 0

VCB = 32 V, IE = 0 , TA = 150 °C; BCW67

VCB = 45 V, IE = 0 , TA = 150 °C; BCW68

ICBO

-

0.02

20

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0 IEBO - - 20 nA

DC current gain1)

IC = 100 µA, VCE = 10 V, hFE-grp.A/F

IC = 100 µA, VCE = 10 V, hFE-grp.B/G

IC = 100 µA, VCE = 10 V, hFE-grp.C/H

IC = 10 mA, VCE = 1 V, hFE-grp.A/F

IC = 10 mA, VCE = 1 V, hFE-grp.B/G

IC = 10 mA, VCE = 1 V, hFE-grp.C/H

IC = 100 mA, VCE = 1 V, hFE-grp.A/F

IC = 100 mA, VCE = 1 V, hFE-grp.B/G

IC = 100 mA, VCE = 1 V, hFE-grp.C/H

IC = 500 mA, VCE = 2 V, hFE-grp.A/F

IC = 500 mA, VCE = 2 V, hFE-grp.B/G

IC = 500 mA, VCE = 2 V, hFE-grp.C/H

hFE

35

50

80

75

120

180

100

160

250

35

60

100

-

160

250

350

-

250

400

630

-

2007-04-20

4

BCW67, BCW68

DC Electrical Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VCEsat

-

0.3

0.7

V

Base emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VBEsat

-

1.25

2

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz fT- 200 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz Ccb - 6 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz Ceb - 60 -

1Pulse test: t < 300µs; D < 2%

2007-04-20

5

BCW67, BCW68

DC current gain hFE = ƒ(IC)

VCE = 1 V

10 10 10 10

BCW 67/68 EHP00403

h

mA

-1 023

FE

3

10

102

0

10

5

101

1

10

5

100

25

-50

555

C

Ι

˚C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

10 0 600

BCW 67/68 EHP00402

V

CE sat

10

mA

10

3

2

1

0

-1

5

mV

200 400 800

150

25

-50

C

Ι

˚C

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 10

10 03

BCW 67/68 EHP00401

VBE sat

10

mA

10

3

2

1

0

-1

5

V

12 4

150

25

-50

C

Ι

˚C

Collector cutoff current ICBO = ƒ(TA)

VCBO = 25 V

10 0 50 100 150

BCW 67/68 EHP00400

TA

5

10

nA

10

Ι

CB0

5

10

5

4

3

2

1

0

max

typ

˚C

2007-04-20

6

BCW67, BCW68

Transition frequency fT = ƒ(IC)

VCE = 5 V

10 10 10 10

BCW 67/68 EHP00398

f

mA

MHz

0123

5

T

3

10

2

1

10

5

C

Ι

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

0 2 4 6 8 10 12 14 16 V20

VCB/VEB

0

5

10

15

20

25

30

35

40

45

50

55

pF

65

CCB/CEB

CCB

CEB

Total power dissipation Ptot = ƒ(TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

50

100

150

200

250

300

350

400

450

mW

550

Ptot

BCW66K

BCW66

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10

EHP00399BCW 67/68

-6

0

10

5

D

=

5

10

1

5

10

2

3

10

-5

10

-4

10

-3

10

-2

10

0

s

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t

p

=

DT

t

p

T

totmax

tot

P

DC

P

p

t

2007-04-20

7

BCW67, BCW68

Package SOT23

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

EH

s

BCW66

Type code

Pin 1

0.8

0.9 0.91.3

0.8 1.2

0.25 MBC

1.9

-0.05

+0.1

0.4

±0.1

2.9

0.95

C

B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3

±0.1

10˚ MAX.

M

2.4

±0.15

±0.1

1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

12

3

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Manufacturer

2005, June

Date code (YM)

2007-04-20

8

BCW67, BCW68

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.