MMBT3904
300mW, NPN Small Signal Transistor
Small Signal Transistor
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case : SOT- 23 small outline plastic package 2.80 3.00 0.110 0.118
1.20 1.40 0.047 0.055
0.30 0.50 0.012 0.020
1.80 2.00 0.071 0.079
2.25 2.55 0.089 0.100
0.90 1.20 0.035 0.043
Package Packing Marking
SOT-23 3K / 7" Reel 1AM
SOT-23 3K / 7" Reel 1AM
Maximum Ratings
Notes:1. Valid provided that electrodes are kept at ambient temperature
Units
°C
200
-55 to + 150
mA
Ordering Information
Part No.
MMBT3904 RF
MMBT3904 RFG
Junction and Storage Temperature Range TJ, TSTG
Emitter-Base Voltage VEBO
Collector Current IC
0.022 REF0.550 REF
High temperature soldering guaranteed: 260°C/10s
F
mW
Features
Mechanical Data
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
A
D
E
G
Rating at 25°C ambient temperature unless otherwise specified.
Marking Code : 1AM
B
Power Dissipation PD
Value
Suggested PAD Layout
V
V
V
40
60
Unit (mm)
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
6
300
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Unit (inch)
Dimensions
SOT-23
Type Number Symbol
Epitaxial planar die construction
Weight : 0.008gram (approximately)
Maximum Ratings and Electrical Characteristics
C
B
A
C
D
F
E
G
2 Emitter
3 Collector
1 Base
2.0
0.079
0.95
0.037
0.9
0.035
0.8
0.031
Version : C11
MMBT3904
300mW, NPN Small Signal Transistor
Small Signal Transistor
Electrical Characteristics Units
Collector-Base Breakdown Voltage IE= 0 V
IB= 0 V
IC= 0 V
IE= 0 μA
nA
IC= 0 μA
IC= 10mA
IC= 50mA
IC= 100mA
Collector-Emitter saturation voltage IB= 5mA V
Base-Emitter saturation voltage IB= 5mA V
VCE= 20V f= 100MHz MHz
VCC=3V VBE=0.5V IC=10mA IB1=1.0mA nS
VCC=3V VBE=0.5V IC=10mA IB1=1.0mA nS
VCC=3V IC=10mA IB1=IB2=1.0mA nS
VCC=3V IC=10mA IB1=IB2=1.0mA nS
Tape & Reel specification
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
178 ± 1
d
D
200
C
50
1.50 ± 0.10
VBE(sat)
0.3
0.95
55 Min
tr
Item Symbol Dimension(mm)
A
B
Min Max
0.1
Type Number
IC= 10μA
IC= 1mA
IE= 10μA
VCB= 60V
60
40
VCE= 1V
50
30 -
400
VEB= 5V
VCE= 1V 60 -
-
-
-6
0.1
Delay time
Rise time
250
fT
td
-
-35
-35
IC= 50mA
IC= 50mA
IC= 10mA
Transition frequency
W1
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10 P0
P1
Emitter Cut-offCurrent
T
D1
D2
E
F
DC current gain
-
-
-
V(BR)CBO
IEBO
VCE(sat)
ICBO
V(BR)CEO
V(BR)EBO
Symbol
-
hFE
Collector Cut-off Current VCE= 30V VBE(OFF)= 3V
12.30 ±0.20
Collector-Emitter Breakdown Voltage
2.00 ±0.05
Emitter-Base Breakdown Voltage
0.229 ±0.013
8.10 ±0.20 W
Collector Cut-off Current
ICEO -
VCE= 1V 100
Fall time tf-
Storage time ts-
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
TSC label
W1
D1D2
D
T
C
dP1
P0
A
B
FW
E
Direction of Feed
Version : C11
MMBT3904
300mW, NPN Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Version : C11
Base-Emitter ON Voltage vs
Collec tor C u rrent
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
Col le ctor-Emitter Saturation
Volt age vs Collect o r Cu rren t
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
Collect or- Cut of f Curre nt
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
Typi cal Pu lsed C urr ent Gai n
vs Col lector Cur ren t
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPI CA L PULSED CU RR EN T GA IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
