2SA1015(L)
2003-03-27
1
TO SHIBA T r ansistor Silicon PNP Epitaxial Type (P CT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
· High voltage and high current: VCEO = −50 V (min),
I
C = −150 mA (max)
· Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
· Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
· Complementary to 2SC1815 (L)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Collect or-base voltage VCBO -50 V
Collect or-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC -150 mA
Base current IB -50 mA
Collect or power diss i pation PC 400 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = -50 V, IE = 0 ¾ ¾ -0.1 mA
Emitte r cut-off cur r ent IEBO V
EB = -5 V, I C = 0 ¾ ¾ -0.1 mA
hFE (1)
(Note) VCE = -6 V, I C = -2 mA 70 ¾ 400
DC current gain
hFE (2) V
CE = -6 V, IC = -150 mA 25 80 ¾
Collect or-em it t e r saturati on vol tage VCE (sat) I
C = -100 mA, IB = -10 mA ¾ -0.1 -0.3 V
Base-emitter saturation voltage VBE (sat) I
C = -100 mA, IB = -10 mA ¾ ¾ -1.1 V
Transiti on frequenc y fT V
CE = -10 V, IC = -1 mA 80 ¾ ¾ MHz
Collect or output capaci t ance Cob VCB = -10 V, IE = 0
f = 1 MHz ¾ 4 7 pF
Base intrinsic resistance rbb’ VCB = -10 V, IE = 1 mA
f = 30 MHz ¾ 30 ¾ W
NF (1) VCE = -6 V, IC = -0.1 mA
f = 100 Hz, RG = 10 kW ¾ 0.5 6
Noise figure NF (2) VCE = -6 V, IC = -0.1 mA
f = 1 kHz, RG = 10 kW ¾ 0.2 3 dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)