CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 2/4
BAS21N3 CYStek Product Specification
Absolute Maximum Ratings @TA=25℃
Parameter Symbol Min Max Unit
Repetitive peak reverse voltage VRRM - 250 V
Continuous reverse voltage VR - 200 V
Continuous forward current IF - 200 mA
Repetitive peak forward current IFRM 625 mA
Non-repetitive peak forward current
@square wave, Tj=25℃ prior to surge t=1µs
t=100µs
t=10ms
IFSM
-
-
-
9
3
1.7
A
A
A
Total power dissipation(Note 1) Ptot 250 mW
Junction Temperature Tj - 150
°C
Storage Temperature Tstg -65 +150
°C
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters Symbol Conditions Min Typ. Max Unit
Forward voltage VF IF=100mA
IF=200mA - - 1
1.25
V
V
Reverse current IR VR=200V
VR=200V,Tj=150℃ - -
100
100
nA
µA
Diode capacitance Cd VR=0V, f=1MHz - - 5 pF
Reverse recovery time trr
when switched from IF=30mA to
IR=30mA,RL=100Ω, measured
at IR=3mA
- - 50 ns
Thermal Characteristics
Symbol Parameter Conditions Value Unit
Rth,j-tp thermal resistance from junction to tie-point 330 ℃/W
Rth, j-a thermal resistance from junction to ambient Note 1 500 ℃/W
Note 1: Device mounted on an FR-4 PCB.