IGBT MODULE
MODULE MODULE
MODULE Chopper 400A 600V
Chopper 400A 600VChopper 400A 600V
Chopper 400A 600V
PCHMB400A6A
PCHMB400A6APCHMB400A6A
PCHMB400A6A
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS (Tc=25°C)
Item Symbol PCHMB400A6A Unit
Collector-Emitter Voltage VCES 600 V
Gate - Emitter Voltage VGES +/ - 20 V
DC IC 400
Collector Current 1 ms ICP 800
A
Collector Power Dissipation PC 1470 W
Junction Temperature Range Tj -40 to +150 °C
Storage Temperature Range Tstg -40 to +125 °C
Isolation Voltage Terminal to Base AC, 1 min.) VISO 2500 V
Module Base to Heatsink
Mounting Torque Bus Bar to Main Termin als FTOR 3 N•m
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter Cut-Off Current ICES V
CE=600V,VGE=0V - - 4.0
mA
Gate-Emitter Leakage Current IGES V
GE=+/- 20V,VCE=0V - - 1.0
µA
Collector-Emitter Saturation Voltage VCE(sat) I
C=400A,VGE=15V - 2.1 2.6
V
Gate-Emitter Threshold Voltage VGE(th) V
CE=5V,IC=400mA 4.0 - 8.0
V
Input Capacitance Cies VCE=10V,VGE=0V,f=1MHz - 40000 -
pF
Rise Time tr - 0.25 0.45
Turn-on Time ton - 0.45 0.85
Fall Time tf - 0.2 0.35
Switching Time
Turn-off Time toff
VCC= 300V
RL= 0. 75 ohm
RG= 1.6 ohm
VGE= +/- 15V - 0.6 0.8
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item Symbol Rated Value Unit
DC IF 400
Forward Current 1 ms IFM 800
A
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Peak Forward Voltage VF I
F=400A,VGE=0V - 1.9 2.4
V
Reverse Recovery Time trr IF=400A,VGE=-10V,di/dt=400A/µs - 0.15 0.25
µs
THERMAL CHARACTERISTICS
Characteristic Symbol Test Condition Min. Typ. Max. Unit
IGBT - - 0.085
Thermal Impedance DIODE Rth(j-c) Junction to Case - - 0.20
°C/W
2- fasten- tab No 110
Dimension(mm)
A
pproximate Weight : 500g
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PCHMB400A6A
0246810
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Fig.1- Output Characteristics
(Typical)
TC=25℃
10V
9V
12V
15V
VGE =20V
8V
7V
0 4 8 121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltag e VGE
(V)
Collector to Emitter Voltage V CE
(V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
TC=25℃
400A
IC=160A 800A
0 4 8 12 16 20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE
(V)
Collector to Emitter Voltage V CE
(V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
TC=125℃
400A
IC=160A 800A
0
2
4
6
8
10
12
14
16
0 300 600 900 1200 1500 1800
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg
(nC)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
VCE=300V
200V
100V
RL=0.75Ω
TC=25℃
0.2 0.5 1 2 5 10 20 50 100 200
200
500
1000
2000
5000
10000
20000
50000
100000
200000
Collector to Emitter Voltage V
CE
(V)
Capacitance C
(pF)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
Cies
Coes
Cres
VGE =0V
f=1MHZ
TC=25℃
0 100 200 300 400
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Collector Current I
C
(A)
Switching Time t
(μs)
Fig.6- Collector Current vs. Switching Time
(Typical)
toff
VCC=300V
RG=1.6Ω
VGE =±15V
TC=25℃
ton
tr
tf
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PCHMB400A6A
12 51020 50
0.05
0.1
0.2
0.5
1
2
5
Series Gate Impedance R
G
(Ω)
Switching Time t
(μs)
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
VCC=300V
IC=400A
VG=±15V
TC=25℃
tf
tr
ton
toff
01234
0
100
200
300
400
500
600
700
800
Forward Voltage V
F
(V)
Forward Current I
F
(A)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
TC=25℃TC=125℃
0 400 800 1200 1600 2000 2400
5
10
20
50
100
200
500
-di/dt
(A/μs)
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
Fig.9- Reverse Recovery Characteristics
(Typical)
IRrM
trr
IF=400A
TC=25℃
0 200 400 600 800
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Fig.10- Reverse Bias Safe Operating Area
(Typical)
RG=1.6Ω
VGE =±15V
TC≦125℃
10
-5
10
-4
10
-3
10
-2
10
-1
110
1
1x10
-4
2x10
-4
5x10
-4
1x10
-3
2x10
-3
5x10
-3
1x10
-2
2x10
-2
5x10
-2
1x10
-1
2x10
-1
5x10
-1
Time t
(s)
Transient Thermal Impedance Rth
(J-C) (℃/W)
Fig.11- Transient Thermal Impedance
TC=25℃
1 Shot Pulse
FRD
IGBT
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